Inventor
WANG CONNIE PIN-CHIN
US19 patents
⚠️ This page may combine multiple inventors who share the name “WANG CONNIE PIN-CHIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
11 patentsUS6509267B1Jan 21, 2003
Method of forming low resistance barrier on low k interconnect with electrolessly plated copper seed layer
ADVANCED MICRO DEVICES INC156 citations99
US6979625B1Dec 27, 2005
Copper interconnects with metal capping layer and selective copper alloys
ADVANCED MICRO DEVICES INC68 citations98
US6952052B1Oct 4, 2005
Cu interconnects with composite barrier layers for wafer-to-wafer uniformity
ADVANCED MICRO DEVICES INC51 citations92
US6506668B1Jan 14, 2003
Utilization of annealing enhanced or repaired seed layer to improve copper interconnect reliability
ADVANCED MICRO DEVICES INC58 citations92
US7755194B1Jul 13, 2010
Composite barrier layers with controlled copper interface surface roughness
ADVANCED MICRO DEVICES INC10 citations84
US7033940B1Apr 25, 2006
Method of forming composite barrier layers with controlled copper interface surface roughness
ADVANCED MICRO DEVICES INC13 citations84
US6943096B1Sep 13, 2005
Semiconductor component and method of manufacture
ADVANCED MICRO DEVICES INC13 citations84
US6979642B1Dec 27, 2005
Method of self-annealing conductive lines that separates grain size effects from alloy mobility
ADVANCED MICRO DEVICES INC8 citations74
US6927162B1Aug 9, 2005
Method of forming a contact in a semiconductor device with formation of silicide prior to plasma treatment
ADVANCED MICRO DEVICES INC7 citations72
US7217660B1May 15, 2007
Method for manufacturing a semiconductor component that inhibits formation of wormholes
ADVANCED MICRO DEVICES INC2 citations62
US7476604B1Jan 13, 2009
Aggressive cleaning process for semiconductor device contact formation
ADVANCED MICRO DEVICES INC3 citations59
SPANSION LLC
5 patentsUS7309650B1Dec 18, 2007
Memory device having a nanocrystal charge storage region and method
SPANSION LLC22 citations92
US8039391B1Oct 18, 2011
Method of forming a contact in a semiconductor device with engineered plasma treatment profile of barrier metal layer
SPANSION LLC23 citations91
US7378310B1May 27, 2008
Method for manufacturing a memory device having a nanocrystal charge storage region
SPANSION LLC12 citations82
US7335594B1Feb 26, 2008
Method for manufacturing a memory device having a nanocrystal charge storage region
SPANSION LLC13 citations82
US7407882B1Aug 5, 2008
Semiconductor component having a contact structure and method of manufacture
SPANSION LLC3 citations62