Inventor
WANG CHING-CHUN
TW136 patents
⚠️ This page may combine multiple inventors who share the name “WANG CHING-CHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
38 patentsUS9728521B2Aug 8, 2017
Hybrid bond using a copper alloy for yield improvement
TAIWAN SEMICONDUCTOR MFG CO LTD227 citations98
US9704827B2Jul 11, 2017
Hybrid bond pad structure
TAIWAN SEMICONDUCTOR MFG CO LTD32 citations98
US11222915B2Jan 11, 2022
Pad structure for front side illuminated image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US11227889B2Jan 18, 2022
Extra doped region for back-side deep trench isolation
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US11069736B2Jul 20, 2021
Via support structure under pad areas for BSI bondability improvement
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10943940B2Mar 9, 2021
Image sensor comprising reflective guide layer and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10727205B2Jul 28, 2020
Hybrid bonding technology for stacking integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10622394B2Apr 14, 2020
Image sensing device
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10566374B2Feb 18, 2020
Via support structure under pad areas for BSI bondability improvement
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10522586B2Dec 31, 2019
Apparatus for reducing optical cross-talk in image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10461109B2Oct 29, 2019
Multiple deep trench isolation (MDTI) structure for CMOS image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10283549B2May 7, 2019
Via support structure under pad areas for BSI bondability improvement
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10276618B2Apr 30, 2019
Extra doped region for back-side deep trench isolation
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10269857B2Apr 23, 2019
Image sensor comprising reflective guide layer and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10038025B2Jul 31, 2018
Via support structure under pad areas for BSI bondability improvement
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US10038026B2Jul 31, 2018
Bond pad structure for bonding improvement
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10014340B2Jul 3, 2018
Stacked SPAD image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9966412B2May 8, 2018
Method for reducing optical cross-talk in image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US9954022B2Apr 24, 2018
Extra doped region for back-side deep trench isolation
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9871070B2Jan 16, 2018
Voltage biased metal shielding and deep trench isolation for backside illuminated (BSI) image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9728570B2Aug 8, 2017
Deep trench isolation fabrication for BSI image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9711562B2Jul 18, 2017
Apparatus and method for reducing optical cross-talk in image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9659981B2May 23, 2017
Backside illuminated image sensor with negatively charged layer
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9473753B2Oct 18, 2016
Apparatus and method for reducing optical cross-talk in image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9666566B1May 30, 2017
3DIC structure and method for hybrid bonding semiconductor wafers
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US12315843B2May 27, 2025
Hybrid bonding technology for stacking integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations75
US11984465B2May 14, 2024
Multiple deep trench isolation (MDTI) structure for CMOS image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11804473B2Oct 31, 2023
Hybrid bond pad structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11410972B2Aug 9, 2022
Hybrid bonding technology for stacking integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11404460B2Aug 2, 2022
Vertical gate field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11322481B2May 3, 2022
Hybrid bonding technology for stacking integrated circuits
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11244981B2Feb 8, 2022
Bond pad structure for bonding improvement
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11088196B2Aug 10, 2021
Metal reflector grounding for noise reduction in light detector
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11069731B2Jul 20, 2021
Apparatus for reducing optical cross-talk in image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10861894B2Dec 8, 2020
Multiple deep trench isolation (MDTI) structure for CMOS image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10833119B2Nov 10, 2020
Pad structure for front side illuminated image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10811398B2Oct 20, 2020
Semiconductor structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10727265B2Jul 28, 2020
Multiple deep trench isolation (MDTI) structure for CMOS image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
TAIWAN SEMICONDUCTOR MFG
9 patentsUS7999342B2Aug 16, 2011
Image sensor element for backside-illuminated sensor
TAIWAN SEMICONDUCTOR MFG44 citations98
US6518085B1Feb 11, 2003
Method for making spectrally efficient photodiode structures for CMOS color imagers
TAIWAN SEMICONDUCTOR MFG58 citations96
US8053856B1Nov 8, 2011
Backside illuminated sensor processing
TAIWAN SEMICONDUCTOR MFG26 citations92
US8866250B2Oct 21, 2014
Multiple metal film stack in BSI chips
TAIWAN SEMICONDUCTOR MFG11 citations84
US8054371B2Nov 8, 2011
Color filter for image sensor
TAIWAN SEMICONDUCTOR MFG13 citations84
US7838325B2Nov 23, 2010
Method to optimize substrate thickness for image sensor device
TAIWAN SEMICONDUCTOR MFG8 citations84
US7656000B2Feb 2, 2010
Photodetector for backside-illuminated sensor
TAIWAN SEMICONDUCTOR MFG12 citations84
US6707080B2Mar 16, 2004
Method for making spectrally efficient photodiode structures for CMOS color imagers
TAIWAN SEMICONDUCTOR MFG9 citations74
US6323054B1Nov 27, 2001
Lateral P-I-N photodiode element with high quantum efficiency for a CMOS image sensor
TAIWAN SEMICONDUCTOR MFG14 citations74
CYPRESS SEMICONDUCTOR CORP
1 patentTING SHYH-FANN
1 patentHSU TZU-HSUAN
1 patentShowing the top 50 of 136 patents by PatentIndex Score.