P

Inventor

WANG CHING-CHUN

TW136 patents
⚠️ This page may combine multiple inventors who share the name “WANG CHING-CHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

38 patents
US9728521B2Aug 8, 2017

Hybrid bond using a copper alloy for yield improvement

TAIWAN SEMICONDUCTOR MFG CO LTD227 citations98
US9704827B2Jul 11, 2017

Hybrid bond pad structure

TAIWAN SEMICONDUCTOR MFG CO LTD32 citations98
US11222915B2Jan 11, 2022

Pad structure for front side illuminated image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US11227889B2Jan 18, 2022

Extra doped region for back-side deep trench isolation

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US11069736B2Jul 20, 2021

Via support structure under pad areas for BSI bondability improvement

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10943940B2Mar 9, 2021

Image sensor comprising reflective guide layer and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10727205B2Jul 28, 2020

Hybrid bonding technology for stacking integrated circuits

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10622394B2Apr 14, 2020

Image sensing device

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10566374B2Feb 18, 2020

Via support structure under pad areas for BSI bondability improvement

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10522586B2Dec 31, 2019

Apparatus for reducing optical cross-talk in image sensors

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10461109B2Oct 29, 2019

Multiple deep trench isolation (MDTI) structure for CMOS image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10283549B2May 7, 2019

Via support structure under pad areas for BSI bondability improvement

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10276618B2Apr 30, 2019

Extra doped region for back-side deep trench isolation

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10269857B2Apr 23, 2019

Image sensor comprising reflective guide layer and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10038025B2Jul 31, 2018

Via support structure under pad areas for BSI bondability improvement

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US10038026B2Jul 31, 2018

Bond pad structure for bonding improvement

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10014340B2Jul 3, 2018

Stacked SPAD image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9966412B2May 8, 2018

Method for reducing optical cross-talk in image sensors

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US9954022B2Apr 24, 2018

Extra doped region for back-side deep trench isolation

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9871070B2Jan 16, 2018

Voltage biased metal shielding and deep trench isolation for backside illuminated (BSI) image sensors

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9728570B2Aug 8, 2017

Deep trench isolation fabrication for BSI image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9711562B2Jul 18, 2017

Apparatus and method for reducing optical cross-talk in image sensors

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9659981B2May 23, 2017

Backside illuminated image sensor with negatively charged layer

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9473753B2Oct 18, 2016

Apparatus and method for reducing optical cross-talk in image sensors

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9666566B1May 30, 2017

3DIC structure and method for hybrid bonding semiconductor wafers

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US12315843B2May 27, 2025

Hybrid bonding technology for stacking integrated circuits

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations75
US11984465B2May 14, 2024

Multiple deep trench isolation (MDTI) structure for CMOS image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11804473B2Oct 31, 2023

Hybrid bond pad structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11410972B2Aug 9, 2022

Hybrid bonding technology for stacking integrated circuits

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11404460B2Aug 2, 2022

Vertical gate field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11322481B2May 3, 2022

Hybrid bonding technology for stacking integrated circuits

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11244981B2Feb 8, 2022

Bond pad structure for bonding improvement

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11088196B2Aug 10, 2021

Metal reflector grounding for noise reduction in light detector

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11069731B2Jul 20, 2021

Apparatus for reducing optical cross-talk in image sensors

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10861894B2Dec 8, 2020

Multiple deep trench isolation (MDTI) structure for CMOS image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10833119B2Nov 10, 2020

Pad structure for front side illuminated image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10811398B2Oct 20, 2020

Semiconductor structure and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10727265B2Jul 28, 2020

Multiple deep trench isolation (MDTI) structure for CMOS image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

TAIWAN SEMICONDUCTOR MFG

9 patents

CYPRESS SEMICONDUCTOR CORP

1 patent

TING SHYH-FANN

1 patent

HSU TZU-HSUAN

1 patent

Showing the top 50 of 136 patents by PatentIndex Score.