Inventor

WOO SANG-GYUN

KR61 patents

⚠️ This page may combine multiple inventors who share the name “WOO SANG-GYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WOO SANG-GYUN

SAMSUNG ELECTRONICS CO LTD

Methods for forming line patterns in semiconductor substrates

Mask patterns for semiconductor device fabrication and related methods and structures

Method of forming small pitch pattern using double spacers

Methods of fabricating a semiconductor device

Method of forming pattern using fine pitch hard mask

Mask patterns for semiconductor device fabrication and related methods

Mask pattern for semiconductor device fabrication, method of forming the same, method for preparing coating composition for fine pattern formation, and method of fabricating semiconductor device

Photosensitive polymer having cyclic backbone and resist composition containing the same

Photosenseitive polymer having fluorinated ethylene glycol group and chemically amplified resist composition comprising the same

Methods for forming line patterns in semiconductor substrates

Fluorine-containing photosensitive polymer having hydrate structure and resist composition comprising the same

Resist composition comprising photosensitive polymer having loctone in its backbone

Nonvolatile memory device and method of manufacturing the same

Top coating composition for photoresist and method of forming photoresist pattern using same

Multi-exposure semiconductor fabrication mask sets and methods of fabricating such multi-exposure mask sets

System and method correcting optical proximity effect using pattern configuration dependent OPC models

Method of forming a photoresist pattern and method for patterning a layer using a photoresist

Photosensitive monomer, photosensitive polymer and chemically amplified resist composition comprising lactone group having acid-labile protecting group

Photosensitive polymer containing Si, Ge or Sn and resist composition comprising the same

Mask pattern for semiconductor device fabrication, method of forming the same, method for preparing coating, composition for fine pattern formation, and method of fabricating semiconductor device

Photosensitive polymer

Photosensitive lithocholate derivative and chemically amplified photoresist composition containing the same

Phase shift masks including chromium oxide and alumina phase shifter patterns, and methods of manufacturing and using the same

Method for forming patterns of semiconductor device

Semiconductor device having fine contacts

Reflective photomask and method of fabricating the same

Composition for a bottom-layer resist

Photosensitive polymer including fluorine and resist composition containing the same

Ether monomers and polymers having multi-ring structures, and photosensitive polymers and resist compositions obtained from the same

Photosensitive polymers and resist compositions comprising the photosensitive polymers

Ether monomers and polymers having multi-ring structures, and photosensitive polymers and resist compositions obtained from the same

Nonvolatile memory device and method of manufacturing the same

Semiconductor device having overlay measurement mark and method of fabricating the same

Method of forming trench in semiconductor device

Photosensitive polymer and resist composition containing the same

Semiconductor memory devices including offset bit lines

Method of forming an underlayer of a bi-layer resist film and method of fabricating a semiconductor device using the same

Alicyclic photosensitive polymer, resist composition containing the same and method of preparing the resist composition

Semiconductor memory devices including diagonal bit lines

Optical masks and methods for measuring aberration of a beam

Optical masks and methods for measuring aberration of a beam

Polymer, top coating layer, top coating composition and immersion lithography process using the same

Method of forming pattern for semiconductor device

Resist composition comprising photosensitive polymer having lactone in its backbone

Resist composition comprising photosensitive polymer having lactone in its backbone

Polymer having butadiene sulfone repeating unit and resist composition comprising the same

Halftone phase shift blank photomasks and halftone phase shift photomasks

LEE JI-YOUNG

Semiconductor device having fine contacts and method of fabricating the same

Method of forming pattern using fine pitch hard mask

HAN HAEK-SEUNG

Methods of correcting optical parameters in photomasks