Inventor

KELLER STACIA

US34 patents

⚠️ This page may combine multiple inventors who share the name “KELLER STACIA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KELLER STACIA

UNIV CALIFORNIA

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices

Method to reduce the dislocation density in group III-nitride films

High quality, semi-insulating gallium nitride and method and system for forming same

Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AIN and their alloys by metal organic chemical vapor deposition

Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition

Method for the growth of P-type gallium nitride and its alloys

High light extraction efficiency light emitting diode (LED) with emitters within structured materials

UV assisted gallium nitride growth

Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage

(In,Ga,Al)N optoelectronic devices grown on relaxed (In,Ga,Al)N-on-GaN base layers

Structure for increasing mobility in a high electron mobility transistor

High mobility group-III nitride transistors with strained channels

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices

III-N based material structures, methods, devices and circuit modules based on strain management

Method to control the relaxation of thick films on lattice-mismatched substrates

Method for heteroepitaxial growth of high channel conductivity and high breakdown voltage nitrogen polar high electron mobility transistors

III-N transistor structures with stepped cap layers

Method to achieve active p-type layer/layers in III-nitrtde epitaxial or device structures having buried p-type layers

Metalorganic chemical vapor deposition of oxide dielectrics on N-polar III-nitride semiconductors with high interface quality and tunable fixed interface charge

TRANSPHORM INC

III-nitride transistor including a p-type depleting layer

Carbon doping semiconductor devices

Carbon doping semiconductor devices

III-Nitride transistor including a III-N depleting layer

III-nitride transistor including a p-type depleting layer

Carbon doping semiconductor devices

Buffer layer structures suited for III-nitride devices with foreign substrates

KELLER STACIA

Buffer layer structures suited for III-nitride devices with foreign substrates

Method for heteroepitaxial growth of high-quality N-face gallium nitride, indium nitride, and aluminum nitride and their alloys by metal organic chemical vapor deposition

Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition

CHAKRABORTY ARPAN

Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition

Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition

JAPAN SCIENCE & TECH AGENCY

Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition

CREE INC

Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

CRAVEN MICHAEL D

Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices