Inventor
BAE EUN-JU
KR17 patents
⚠️ This page may combine multiple inventors who share the name “BAE EUN-JU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
14 patentsUS7005391B2Feb 28, 2006
Method of manufacturing inorganic nanotube
SAMSUNG ELECTRONICS CO LTD521 citations99
US7132714B2Nov 7, 2006
Vertical carbon nanotube-field effect transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD19 citations92
US7060543B2Jun 13, 2006
Method of forming a conductive line for a semiconductor device using a carbon nanotube and semiconductor device manufactured using the method
SAMSUNG ELECTRONICS CO LTD15 citations92
US7247897B2Jul 24, 2007
Conductive line for a semiconductor device using a carbon nanotube including a memory thin film and semiconductor device manufactured
SAMSUNG ELECTRONICS CO LTD11 citations84
US8007617B2Aug 30, 2011
Method of transferring carbon nanotubes
SAMSUNG ELECTRONICS CO LTD10 citations81
US7705347B2Apr 27, 2010
N-type carbon nanotube field effect transistor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations73
US7381983B2Jun 3, 2008
N-type carbon nanotube field effect transistor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD8 citations73
US7799307B2Sep 21, 2010
Method of growing single-walled carbon nanotubes
SAMSUNG ELECTRONICS CO LTD3 citations62
US7767140B2Aug 3, 2010
Method for manufacturing zinc oxide nanowires and device having the same
SAMSUNG ELECTRONICS CO LTD5 citations62
US7674665B2Mar 9, 2010
Method of fabricating Schottky barrier transistor
SAMSUNG ELECTRONICS CO LTD5 citations62
US7928017B2Apr 19, 2011
Method of forming nanowire and method of manufacturing semiconductor device comprising the nanowire
SAMSUNG ELECTRONICS CO LTD2 citations56
US7902011B2Mar 8, 2011
Method of fabricating Schottky barrier transistor
SAMSUNG ELECTRONICS CO LTD1 citations52
US7713509B2May 11, 2010
Method of forming nitrogen-doped single-walled carbon nanotubes
SAMSUNG ELECTRONICS CO LTD1 citations52
US7604790B2Oct 20, 2009
Method of removing carbonaceous impurities in carbon nanotubes
SAMSUNG ELECTRONICS CO LTD1 citations52
MIN YO-SEP
2 patentsUS8294348B2Oct 23, 2012
Field emission electrode, method of manufacturing the same, and field emission device comprising the same
MIN YO-SEP0 citations47
US8272914B2Sep 25, 2012
Method of manufacturing field emission electrode having carbon nanotubes with conductive particles attached to external walls
MIN YO-SEP0 citations47