P

Inventor

BAE EUN-JU

KR17 patents
⚠️ This page may combine multiple inventors who share the name “BAE EUN-JU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

14 patents
US7005391B2Feb 28, 2006

Method of manufacturing inorganic nanotube

SAMSUNG ELECTRONICS CO LTD521 citations99
US7132714B2Nov 7, 2006

Vertical carbon nanotube-field effect transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD19 citations92
US7060543B2Jun 13, 2006

Method of forming a conductive line for a semiconductor device using a carbon nanotube and semiconductor device manufactured using the method

SAMSUNG ELECTRONICS CO LTD15 citations92
US7247897B2Jul 24, 2007

Conductive line for a semiconductor device using a carbon nanotube including a memory thin film and semiconductor device manufactured

SAMSUNG ELECTRONICS CO LTD11 citations84
US8007617B2Aug 30, 2011

Method of transferring carbon nanotubes

SAMSUNG ELECTRONICS CO LTD10 citations81
US7705347B2Apr 27, 2010

N-type carbon nanotube field effect transistor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD5 citations73
US7381983B2Jun 3, 2008

N-type carbon nanotube field effect transistor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD8 citations73
US7799307B2Sep 21, 2010

Method of growing single-walled carbon nanotubes

SAMSUNG ELECTRONICS CO LTD3 citations62
US7767140B2Aug 3, 2010

Method for manufacturing zinc oxide nanowires and device having the same

SAMSUNG ELECTRONICS CO LTD5 citations62
US7674665B2Mar 9, 2010

Method of fabricating Schottky barrier transistor

SAMSUNG ELECTRONICS CO LTD5 citations62
US7928017B2Apr 19, 2011

Method of forming nanowire and method of manufacturing semiconductor device comprising the nanowire

SAMSUNG ELECTRONICS CO LTD2 citations56
US7902011B2Mar 8, 2011

Method of fabricating Schottky barrier transistor

SAMSUNG ELECTRONICS CO LTD1 citations52
US7713509B2May 11, 2010

Method of forming nitrogen-doped single-walled carbon nanotubes

SAMSUNG ELECTRONICS CO LTD1 citations52
US7604790B2Oct 20, 2009

Method of removing carbonaceous impurities in carbon nanotubes

SAMSUNG ELECTRONICS CO LTD1 citations52

MIN YO-SEP

2 patents

MIN YO-SEB

1 patent