Inventor

PARK WAN-JUN

KR41 patents

⚠️ This page may combine multiple inventors who share the name “PARK WAN-JUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PARK WAN-JUN

SAMSUNG ELECTRONICS CO LTD

Magnetic random access memory and method of operating the same

Vertical carbon nanotube-field effect transistor and method of manufacturing the same

MRAM including unit cell formed of one transistor and two magnetic tunnel junctions (MTJS) and method for fabricating the same

Magneto-resistive random access memory

Nano-elastic memory device and method of manufacturing the same

Method for manufacturing electronic device using thin film transistor with protective cap over flexible substrate

Multi-bit nonvolatile memory devices and methods of operating the same

Methods of operating semiconductor memory devices including magnetic films having electrochemical potential difference therebetween

Method of isolating semiconducting carbon nanotubes

Method for manufacturing magneto-resistive random access memory

Silicon nano wires, semiconductor device including the same, and method of manufacturing the silicon nano wires

Method of horizontally growing carbon nanotubes and device having the same

Thin film transistor with protective cap over flexible substrate, electronic device using the same, and manufacturing method thereof

Phase change memory device and method of operating the same

Apparatus and method of analyzing a magnetic random access memory

Magnetic random access memory including middle oxide layer and method of manufacturing the same

Magnetic random access memory (MRAM) for spontaneous hall effect and method of writing and reading data using the MRAM

N-type carbon nanotube field effect transistor and method of fabricating the same

N-type carbon nanotube field effect transistor and method of fabricating the same

Magnetic film structure using spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor device

MRAM including unit cell formed of one transistor and two magnetic tunnel junctions (MTJs) and method for fabricating the same

Nano-elastic memory device and method of manufacturing the same

Method of manufacturing magnetic random access memory including middle oxide layer

Magnetoresistive random access memory with high selectivity

MRAM and methods for manufacturing and driving the same

Method of manufacturing a multi-purpose magnetic film structure

Method of growing single-walled carbon nanotubes

Method for manufacturing zinc oxide nanowires and device having the same

Gas sensor and method thereof

Method of forming nitrogen-doped single-walled carbon nanotubes

Method of removing carbonaceous impurities in carbon nanotubes

Magnetic random access memory (MRAM) and method of manufacturing the same

Nanodots formed on silicon oxide and method of manufacturing the same

SEO SUN-AE

Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same

Nonvolatile memory device comprising one switching device and one resistant material and method of manufacturing the same

PARK WAN-JUN

Magnetic random access memory and method of reading data from the same

Non-volatile memory device including metal-insulator transition material

MIN YO-SEP

Field emission electrode, method of manufacturing the same, and field emission device comprising the same

Method of manufacturing field emission electrode having carbon nanotubes with conductive particles attached to external walls

SK HYNIX INC

Nonvolatile magnetic memory device

JEONG SOO-HWAN

Method of synthesizing carbon nanotubes