Inventor
HAPP THOMAS
US128 patents
⚠️ This page may combine multiple inventors who share the name “HAPP THOMAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
17 patentsUS7214958B2May 8, 2007
Phase change memory cell with high read margin at low power operation
INFINEON TECHNOLOGIES AG272 citations99
US7166533B2Jan 23, 2007
Phase change memory cell defined by a pattern shrink material process
INFINEON TECHNOLOGIES AG291 citations99
US7460394B2Dec 2, 2008
Phase change memory having temperature budget sensor
INFINEON TECHNOLOGIES AG59 citations98
US7417245B2Aug 26, 2008
Phase change memory having multilayer thermal insulation
INFINEON TECHNOLOGIES AG59 citations98
US7405418B2Jul 29, 2008
Memory device electrode with a surface structure
INFINEON TECHNOLOGIES AG81 citations98
US7372725B2May 13, 2008
Integrated circuit having resistive memory
INFINEON TECHNOLOGIES AG54 citations96
US7324365B2Jan 29, 2008
Phase change memory fabricated using self-aligned processing
INFINEON TECHNOLOGIES AG52 citations96
US7348590B2Mar 25, 2008
Phase change memory cell with high read margin at low power operation
INFINEON TECHNOLOGIES AG24 citations93
US7319235B2Jan 15, 2008
Resistive semiconductor element based on a solid-state ion conductor
INFINEON TECHNOLOGIES AG23 citations93
US7113424B2Sep 26, 2006
Energy adjusted write pulses in phase-change memories
INFINEON TECHNOLOGIES AG43 citations93
US7031181B1Apr 18, 2006
Multi-pulse reset write scheme for phase-change memories
INFINEON TECHNOLOGIES AG30 citations93
US7023008B1Apr 4, 2006
Resistive memory element
INFINEON TECHNOLOGIES AG51 citations93
US7601995B2Oct 13, 2009
Integrated circuit having resistive memory cells
INFINEON TECHNOLOGIES AG19 citations92
US7495946B2Feb 24, 2009
Phase change memory fabricated using self-aligned processing
INFINEON TECHNOLOGIES AG28 citations92
US7436695B2Oct 14, 2008
Resistive memory including bipolar transistor access devices
INFINEON TECHNOLOGIES AG20 citations92
US7362608B2Apr 22, 2008
Phase change memory fabricated using self-aligned processing
INFINEON TECHNOLOGIES AG20 citations92
US7615770B2Nov 10, 2009
Integrated circuit having an insulated memory
INFINEON TECHNOLOGIES AG24 citations90
QIMONDA AG
13 patentsUS7869257B2Jan 11, 2011
Integrated circuit including diode memory cells
QIMONDA AG23 citations93
US7838860B2Nov 23, 2010
Integrated circuit including vertical diode
QIMONDA AG22 citations93
US7929336B2Apr 19, 2011
Integrated circuit including a memory element programmed using a seed pulse
QIMONDA AG21 citations91
US7646632B2Jan 12, 2010
Integrated circuit for setting a memory cell based on a reset current distribution
QIMONDA AG21 citations90
US8017930B2Sep 13, 2011
Pillar phase change memory cell
QIMONDA AG8 citations84
US8003971B2Aug 23, 2011
Integrated circuit including memory element doped with dielectric material
QIMONDA AG9 citations84
US7973384B2Jul 5, 2011
Phase change memory cell including multiple phase change material portions
QIMONDA AG13 citations84
US7916524B2Mar 29, 2011
Program method with locally optimized write parameters
QIMONDA AG11 citations84
US7888665B2Feb 15, 2011
Integrated circuit including memory cell having cup-shaped electrode interface
QIMONDA AG7 citations84
US7863593B2Jan 4, 2011
Integrated circuit including force-filled resistivity changing material
QIMONDA AG10 citations84
US7852657B2Dec 14, 2010
Multiple write configurations for a memory cell
QIMONDA AG14 citations84
US7778070B2Aug 17, 2010
Memory with dynamic redundancy configuration
QIMONDA AG17 citations84
US7759770B2Jul 20, 2010
Integrated circuit including memory element with high speed low current phase change material
QIMONDA AG9 citations84
QIMONDA NORTH AMERICA CORP
13 patentsUS7796424B2Sep 14, 2010
Memory device having drift compensated read operation and associated method
QIMONDA NORTH AMERICA CORP37 citations93
US7719886B2May 18, 2010
Multi-level resistive memory cell using different crystallization speeds
QIMONDA NORTH AMERICA CORP20 citations93
US7679980B2Mar 16, 2010
Resistive memory including selective refresh operation
QIMONDA NORTH AMERICA CORP18 citations93
US7623401B2Nov 24, 2009
Semiconductor device including multi-bit memory cells and a temperature budget sensor
QIMONDA NORTH AMERICA CORP31 citations93
US7619917B2Nov 17, 2009
Memory cell with trigger element
QIMONDA NORTH AMERICA CORP34 citations93
US7593255B2Sep 22, 2009
Integrated circuit for programming a memory element
QIMONDA NORTH AMERICA CORP24 citations93
US7545668B2Jun 9, 2009
Mushroom phase change memory having a multilayer electrode
QIMONDA NORTH AMERICA CORP36 citations93
US7539050B2May 26, 2009
Resistive memory including refresh operation
QIMONDA NORTH AMERICA CORP23 citations93
US7457146B2Nov 25, 2008
Memory cell programmed using a temperature controlled set pulse
QIMONDA NORTH AMERICA CORP20 citations93
US7453081B2Nov 18, 2008
Phase change memory cell including nanocomposite insulator
QIMONDA NORTH AMERICA CORP37 citations93
US7405964B2Jul 29, 2008
Integrated circuit to identify read disturb condition in memory cell
QIMONDA NORTH AMERICA CORP35 citations93
US7714315B2May 11, 2010
Thermal isolation of phase change memory cells
QIMONDA NORTH AMERICA CORP19 citations92
US7515455B2Apr 7, 2009
High density memory array for low power application
QIMONDA NORTH AMERICA CORP20 citations86
HAPP THOMAS
3 patentsIBM
2 patentsINFINEON TECHNOLOGIES CORP
1 patentGIESECKE & DEVRIENT GMBH
1 patentShowing the top 50 of 128 patents by PatentIndex Score.