Inventor

GIRAUD BASTIEN

FR26 patents

⚠️ This page may combine multiple inventors who share the name “GIRAUD BASTIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GIRAUD BASTIEN

COMMISSARIAT ENERGIE ATOMIQUE

Method for generating a topography of an FDSOI integrated circuit

Memory circuit

Device with SRAM memory cells including means for polarizing wells of memory cell transistors

Device and method for writing data to a resistive memory

Transistor with coupled gate and ground plane

Asymmetrical SRAM cell with 4 double-gate transistors

SRAM with reconfigurable setting

Electroforming process using an inversion-invariant linear ECC, and associated device

Electronic circuit with RRAM cells

Write method for differential resistive memories

Circuit for detection of predominant data in a memory cell

Memory circuit capable of implementing calculation operations

3D SRAM circuit with double gate transistors with improved layout

Partitioned memory circuit capable of implementing calculation operations

Memory device with unipolar resistive memory cells with programmable resistive element end control transistor and set/reset operations of thereof

COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Method for controlling an integrated circuit

Device and method for writing data to a resistive memory

Integrated circuit comprising a clock tree cell

Integrated circuit comprising a clock tree cell

NOEL JEAN-PHILIPPE

Self-contained integrated circuit including adjacent cells of different types

Integrated circuit using FDSOI technology, with well sharing and means for biasing oppositely doped ground planes present in a same well

FLATRESSE PHILIPPE

Silicon-on-insulator CMOS integrated circuit with multiple threshold voltages and a method for designing the same

THOMAS OLIVIER

SRAM memory cell with double gate transistors provided means to improve the write margin

Commissariat à I'Energie Atomique et aux Energies Alternatives

Programmable-resistance non-volatile memory

COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

SRAM with PUF dedicated sector standing-by

ST MICROELECTRONICS SA

Integrated circuit comprising transistors with different threshold voltages