Inventor
BYUN SUNG-JAE
KR23 patents
⚠️ This page may combine multiple inventors who share the name “BYUN SUNG-JAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
17 patentsUS7352037B2Apr 1, 2008
Semiconductor device and random access memory having single gate electrode corresponding to a pair of channel regions
SAMSUNG ELECTRONICS CO LTD32 citations92
US7932551B2Apr 26, 2011
Nonvolatile memory device and method of fabricating the same comprising a dual fin structure
SAMSUNG ELECTRONICS CO LTD11 citations84
US7911842B2Mar 22, 2011
Memory cell programming method and semiconductor device for simultaneously programming a plurality of memory block groups
SAMSUNG ELECTRONICS CO LTD10 citations84
US7885107B2Feb 8, 2011
Methods of programming non-volatile memory cells
SAMSUNG ELECTRONICS CO LTD7 citations84
US7436704B2Oct 14, 2008
Non-volatile memory devices and method thereof
SAMSUNG ELECTRONICS CO LTD14 citations84
US7829932B2Nov 9, 2010
Semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations83
US7729175B2Jun 1, 2010
Method of writing/reading data into/from memory cell and page buffer using different codes for writing and reading operations
SAMSUNG ELECTRONICS CO LTD7 citations74
US7882344B2Feb 1, 2011
Memory system having a communication channel between a first processor and a second processor and memory management method that uses the communication channel
SAMSUNG ELECTRONICS CO LTD6 citations73
US7697362B2Apr 13, 2010
Arbitration for memory device with commands
SAMSUNG ELECTRONICS CO LTD5 citations73
US7804726B2Sep 28, 2010
Apparatuses and methods for multi-bit programming
SAMSUNG ELECTRONICS CO LTD3 citations63
US7706181B2Apr 27, 2010
Multi-bit programming device and method using single-bit memory cells
SAMSUNG ELECTRONICS CO LTD5 citations63
US7782666B2Aug 24, 2010
Apparatus and method of multi-bit programming
SAMSUNG ELECTRONICS CO LTD5 citations62
US7649784B2Jan 19, 2010
Memory cell programming methods capable of reducing coupling effects
SAMSUNG ELECTRONICS CO LTD4 citations62
US7636251B2Dec 22, 2009
Methods of operating a non-volatile memory device
SAMSUNG ELECTRONICS CO LTD4 citations58
US7751239B2Jul 6, 2010
Device for reading memory data and method using the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7577042B2Aug 18, 2009
Method of programming multi-level semiconductor memory device and multi-level semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US8373782B2Feb 12, 2013
Image sensor including noise removing unit, image pickup device having the image sensor, and image sensing method performed in the image sensor
SAMSUNG ELECTRONICS CO LTD0 citations42