Inventor

KANG HEE-SOO

KR44 patents

⚠️ This page may combine multiple inventors who share the name “KANG HEE-SOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KANG HEE-SOO

SAMSUNG ELECTRONICS CO LTD

Semiconductor device having 3D channels, and methods of fabricating semiconductor devices having 3D channels

Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels

Method of manufacturing semiconductor device

Method for forming a FinFET by a damascene process

Method of forming fin field effect transistor

Semiconductor device fabrication methods

Semiconductor device

Integrated circuit memory devices including memory cells on adjacent pedestals having different heights, and methods of fabricating same

Field effect transistor (FET) devices and methods of manufacturing FET devices

Methods of forming integrated circuit devices having field effect transistors of different types in different device regions

Method of forming fin field effect transistor using damascene process

Field effect transistor (FET) devices and methods of manufacturing FET devices

Semiconductor device and method of manufacturing the same

Methods of fabricating semiconductor devices

Flash memory device including a dummy cell

Semiconductor device and method of manufacturing the same

Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels

Semiconductor device including multi-channel active patterns

Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels

Semiconductor device including a multi-channel active pattern

Selection transistor

Methods of forming complementary metal oxide semiconductor (CMOS) transistors having three-dimensional channel regions therein

Semiconductor devices including protruding insulation portions between active fins

Semiconductor devices including protruding insulation portions between active fins

Semiconductor devices including protruding insulation portions between active fins

Semiconductor devices including protruding insulation portions between active fins

Non-volatile memory device with a charge trapping layer

Semiconductor packages

Methods of programming data in a non-volatile memory device with a fringe voltage applied to conductive layer

Method of programming data in a NAND flash memory device and method of reading data in the NAND flash memory device

Non-volatile memory devices

Semiconductor device having shared bit line structure

MAEDA SHIGENOBU

Semiconductor devices including protruding insulation portions between active fins

Semiconductor devices including protruding insulation portions between active fins

Semiconductor devices including protruding insulation portions between active fins

KANG HEE-SOO

Nonvolatile memory devices having common bit line structure

Method of forming a pattern for a semiconductor device, method of forming a charge storage pattern using the same method, non-volatile memory device and methods of manufacturing the same

Methods of reading data in a NAND flash memory device with a fringe voltage applied to a conductive layer

SUNG SUK-KANG

Method of manufacturing non-volatile memory device

Non-volatile memory devices including a floating gate and methods of manufacturing the same

YOON YOUNG-BAE

Non-volatile memory devices including shared bit lines and methods of fabricating the same

SEL JONG-SUN

Semiconductor memory devices

JANG DONG-HOON

Method of manufacturing semiconductor device having shared bit line structure

KIM HA NEUL

Method of manufacturing iron-based powder