Inventor
LEE CHOONG-HO
KR144 patents
⚠️ This page may combine multiple inventors who share the name “LEE CHOONG-HO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
33 patentsUS7473611B2Jan 6, 2009
Methods of forming non-volatile memory cells including fin structures
SAMSUNG ELECTRONICS CO LTD257 citations99
US7329580B2Feb 12, 2008
Method of fabricating a semiconductor device having self-aligned floating gate and related device
SAMSUNG ELECTRONICS CO LTD277 citations99
US7332386B2Feb 19, 2008
Methods of fabricating fin field transistors
SAMSUNG ELECTRONICS CO LTD56 citations98
US7323375B2Jan 29, 2008
Fin field effect transistor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD108 citations98
US7217623B2May 15, 2007
Fin FET and method of fabricating same
SAMSUNG ELECTRONICS CO LTD41 citations96
US7317230B2Jan 8, 2008
Fin FET structure
SAMSUNG ELECTRONICS CO LTD75 citations95
US7514325B2Apr 7, 2009
Fin-FET having GAA structure and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD23 citations93
US7160780B2Jan 9, 2007
Method of manufacturing a fin field effect transistor
SAMSUNG ELECTRONICS CO LTD22 citations93
US8053347B2Nov 8, 2011
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD25 citations92
US7868380B2Jan 11, 2011
Fin FET and method of fabricating same
SAMSUNG ELECTRONICS CO LTD12 citations92
US7781287B2Aug 24, 2010
Methods of manufacturing vertical channel semiconductor devices
SAMSUNG ELECTRONICS CO LTD14 citations92
US7586149B2Sep 8, 2009
Circuit device including vertical transistors connected to buried bitlines and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD34 citations92
US7358142B2Apr 15, 2008
Method for forming a FinFET by a damascene process
SAMSUNG ELECTRONICS CO LTD29 citations92
US7348628B2Mar 25, 2008
Vertical channel semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD30 citations92
US7177192B2Feb 13, 2007
Method of operating a flash memory device
SAMSUNG ELECTRONICS CO LTD37 citations92
US7531412B2May 12, 2009
Methods of manufacturing semiconductor memory devices including a vertical channel transistor
SAMSUNG ELECTRONICS CO LTD26 citations91
US7915138B2Mar 29, 2011
Methods of manufacturing non-volatile memory devices
SAMSUNG ELECTRONICS CO LTD7 citations84
US7883929B2Feb 8, 2011
Methods of manufacturing non-volatile memory devices by implanting metal ions into grain boundaries of variable resistance layers
SAMSUNG ELECTRONICS CO LTD12 citations84
US7868467B2Jan 11, 2011
Semiconductor device
SAMSUNG ELECTRONICS CO LTD8 citations84
US7834391B2Nov 16, 2010
Integrated circuit memory devices including memory cells on adjacent pedestals having different heights, and methods of fabricating same
SAMSUNG ELECTRONICS CO LTD8 citations84
US7804137B2Sep 28, 2010
Field effect transistor (FET) devices and methods of manufacturing FET devices
SAMSUNG ELECTRONICS CO LTD12 citations84
US7566619B2Jul 28, 2009
Methods of forming integrated circuit devices having field effect transistors of different types in different device regions
SAMSUNG ELECTRONICS CO LTD12 citations84
US7528022B2May 5, 2009
Method of forming fin field effect transistor using damascene process
SAMSUNG ELECTRONICS CO LTD11 citations84
US7511358B2Mar 31, 2009
Nonvolatile memory device having multi-bit storage and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7419859B2Sep 2, 2008
Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regions
SAMSUNG ELECTRONICS CO LTD13 citations84
US7407845B2Aug 5, 2008
Field effect transistor and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US7371638B2May 13, 2008
Nonvolatile memory cells having high control gate coupling ratios using grooved floating gates and methods of forming same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7329581B2Feb 12, 2008
Field effect transistor (FET) devices and methods of manufacturing FET devices
SAMSUNG ELECTRONICS CO LTD12 citations84
US7317646B2Jan 8, 2008
Memory device having shared open bit line sense amplifier architecture
SAMSUNG ELECTRONICS CO LTD15 citations84
US7227220B2Jun 5, 2007
Semiconductor devices having buried bit lines and methods of manufacturing semiconductor devices having buried bit lines
SAMSUNG ELECTRONICS CO LTD11 citations84
US7166514B2Jan 23, 2007
Semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD15 citations84
US8906757B2Dec 9, 2014
Methods of forming patterns of a semiconductor device
SAMSUNG ELECTRONICS CO LTD13 citations83
US7978522B2Jul 12, 2011
Flash memory device including a dummy cell
SAMSUNG ELECTRONICS CO LTD6 citations74
SAMSUNG DISPLAY CO LTD
4 patentsUS9873937B2Jan 23, 2018
Thin film deposition apparatus
SAMSUNG DISPLAY CO LTD5 citations84
US9953828B2Apr 24, 2018
Frame and mask assembly having the same
SAMSUNG DISPLAY CO LTD7 citations83
US9643280B2May 9, 2017
Laser processing apparatus
SAMSUNG DISPLAY CO LTD7 citations79
US9592570B2Mar 14, 2017
Laser processing apparatus
SAMSUNG DISPLAY CO LTD9 citations79
LEE CHOONG-HO
4 patentsUS9281494B2Mar 8, 2016
Display device and organic light emitting diode display
LEE CHOONG-HO9 citations84
US8757088B2Jun 24, 2014
Mask frame assembly
LEE CHOONG-HO15 citations84
US8746169B2Jun 10, 2014
Mask frame assembly for thin film deposition
LEE CHOONG-HO15 citations83
US9087723B2Jul 21, 2015
Field effect transistor and method of fabricating the same
LEE CHOONG-HO9 citations80
YOON JAE-MAN
2 patentsLEE SE-HOON
2 patentsKIM KEUN-NAM
1 patentMAEDA SHIGENOBU
1 patentNAM KIE HYUN
1 patentCHOI DONG-UK
1 patentLIM JONG-HO
1 patentShowing the top 50 of 144 patents by PatentIndex Score.