P

Inventor

LEE CHOONG-HO

KR144 patents
⚠️ This page may combine multiple inventors who share the name “LEE CHOONG-HO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

33 patents
US7473611B2Jan 6, 2009

Methods of forming non-volatile memory cells including fin structures

SAMSUNG ELECTRONICS CO LTD257 citations99
US7329580B2Feb 12, 2008

Method of fabricating a semiconductor device having self-aligned floating gate and related device

SAMSUNG ELECTRONICS CO LTD277 citations99
US7332386B2Feb 19, 2008

Methods of fabricating fin field transistors

SAMSUNG ELECTRONICS CO LTD56 citations98
US7323375B2Jan 29, 2008

Fin field effect transistor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD108 citations98
US7217623B2May 15, 2007

Fin FET and method of fabricating same

SAMSUNG ELECTRONICS CO LTD41 citations96
US7317230B2Jan 8, 2008

Fin FET structure

SAMSUNG ELECTRONICS CO LTD75 citations95
US7514325B2Apr 7, 2009

Fin-FET having GAA structure and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD23 citations93
US7160780B2Jan 9, 2007

Method of manufacturing a fin field effect transistor

SAMSUNG ELECTRONICS CO LTD22 citations93
US8053347B2Nov 8, 2011

Method of manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD25 citations92
US7868380B2Jan 11, 2011

Fin FET and method of fabricating same

SAMSUNG ELECTRONICS CO LTD12 citations92
US7781287B2Aug 24, 2010

Methods of manufacturing vertical channel semiconductor devices

SAMSUNG ELECTRONICS CO LTD14 citations92
US7586149B2Sep 8, 2009

Circuit device including vertical transistors connected to buried bitlines and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD34 citations92
US7358142B2Apr 15, 2008

Method for forming a FinFET by a damascene process

SAMSUNG ELECTRONICS CO LTD29 citations92
US7348628B2Mar 25, 2008

Vertical channel semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD30 citations92
US7177192B2Feb 13, 2007

Method of operating a flash memory device

SAMSUNG ELECTRONICS CO LTD37 citations92
US7531412B2May 12, 2009

Methods of manufacturing semiconductor memory devices including a vertical channel transistor

SAMSUNG ELECTRONICS CO LTD26 citations91
US7915138B2Mar 29, 2011

Methods of manufacturing non-volatile memory devices

SAMSUNG ELECTRONICS CO LTD7 citations84
US7883929B2Feb 8, 2011

Methods of manufacturing non-volatile memory devices by implanting metal ions into grain boundaries of variable resistance layers

SAMSUNG ELECTRONICS CO LTD12 citations84
US7868467B2Jan 11, 2011

Semiconductor device

SAMSUNG ELECTRONICS CO LTD8 citations84
US7834391B2Nov 16, 2010

Integrated circuit memory devices including memory cells on adjacent pedestals having different heights, and methods of fabricating same

SAMSUNG ELECTRONICS CO LTD8 citations84
US7804137B2Sep 28, 2010

Field effect transistor (FET) devices and methods of manufacturing FET devices

SAMSUNG ELECTRONICS CO LTD12 citations84
US7566619B2Jul 28, 2009

Methods of forming integrated circuit devices having field effect transistors of different types in different device regions

SAMSUNG ELECTRONICS CO LTD12 citations84
US7528022B2May 5, 2009

Method of forming fin field effect transistor using damascene process

SAMSUNG ELECTRONICS CO LTD11 citations84
US7511358B2Mar 31, 2009

Nonvolatile memory device having multi-bit storage and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD10 citations84
US7419859B2Sep 2, 2008

Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regions

SAMSUNG ELECTRONICS CO LTD13 citations84
US7407845B2Aug 5, 2008

Field effect transistor and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD13 citations84
US7371638B2May 13, 2008

Nonvolatile memory cells having high control gate coupling ratios using grooved floating gates and methods of forming same

SAMSUNG ELECTRONICS CO LTD10 citations84
US7329581B2Feb 12, 2008

Field effect transistor (FET) devices and methods of manufacturing FET devices

SAMSUNG ELECTRONICS CO LTD12 citations84
US7317646B2Jan 8, 2008

Memory device having shared open bit line sense amplifier architecture

SAMSUNG ELECTRONICS CO LTD15 citations84
US7227220B2Jun 5, 2007

Semiconductor devices having buried bit lines and methods of manufacturing semiconductor devices having buried bit lines

SAMSUNG ELECTRONICS CO LTD11 citations84
US7166514B2Jan 23, 2007

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD15 citations84
US8906757B2Dec 9, 2014

Methods of forming patterns of a semiconductor device

SAMSUNG ELECTRONICS CO LTD13 citations83
US7978522B2Jul 12, 2011

Flash memory device including a dummy cell

SAMSUNG ELECTRONICS CO LTD6 citations74

SAMSUNG DISPLAY CO LTD

4 patents

LEE CHOONG-HO

4 patents

YOON JAE-MAN

2 patents

LEE SE-HOON

2 patents

KIM KEUN-NAM

1 patent

MAEDA SHIGENOBU

1 patent

NAM KIE HYUN

1 patent

CHOI DONG-UK

1 patent

LIM JONG-HO

1 patent

Showing the top 50 of 144 patents by PatentIndex Score.