Inventor
TANG STEPHEN
US22 patents
⚠️ This page may combine multiple inventors who share the name “TANG STEPHEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
13 patentsUS10134470B2Nov 20, 2018
Apparatuses and methods including memory and operation of same
MICRON TECHNOLOGY INC22 citations93
US7986549B1Jul 26, 2011
Apparatus and method for refreshing or toggling a phase-change memory cell
MICRON TECHNOLOGY INC33 citations92
US11074971B2Jul 27, 2021
Apparatuses and methods including memory and operation of same
MICRON TECHNOLOGY INC4 citations83
US10418102B2Sep 17, 2019
Apparatuses and methods including memory and operation of same
MICRON TECHNOLOGY INC8 citations83
US9747981B2Aug 29, 2017
Apparatuses, devices and methods for sensing a snapback event in a circuit
MICRON TECHNOLOGY INC3 citations82
US9390768B2Jul 12, 2016
Apparatuses, devices and methods for sensing a snapback event in a circuit
MICRON TECHNOLOGY INC9 citations82
US9484534B2Nov 1, 2016
Via formation for cross-point memory
MICRON TECHNOLOGY INC3 citations73
US11615844B2Mar 28, 2023
Apparatuses and methods including memory and operation of same
MICRON TECHNOLOGY INC1 citations72
US11100991B2Aug 24, 2021
Apparatuses, devices and methods for sensing a snapback event in a circuit
MICRON TECHNOLOGY INC1 citations71
US10636483B2Apr 28, 2020
Apparatuses, devices and methods for sensing a snapback event in a circuit
MICRON TECHNOLOGY INC2 citations71
US10083745B2Sep 25, 2018
Apparatuses, devices and methods for sensing a snapback event in a circuit
MICRON TECHNOLOGY INC2 citations71
US11081173B2Aug 3, 2021
Via formation for cross-point memory
MICRON TECHNOLOGY INC0 citations62
US10311947B2Jun 4, 2019
Via formation for cross-point memory
MICRON TECHNOLOGY INC0 citations52
INTEL CORP
4 patentsUS6903984B1Jun 7, 2005
Floating-body DRAM using write word line for increased retention time
INTEL CORP138 citations99
US7199617B1Apr 3, 2007
Level shifter
INTEL CORP98 citations98
US7031203B2Apr 18, 2006
Floating-body DRAM using write word line for increased retention time
INTEL CORP14 citations84
US8374022B2Feb 12, 2013
Programming phase change memories using ovonic threshold switches
INTEL CORP17 citations82