Inventor
KAU DERCHANG
US57 patents
⚠️ This page may combine multiple inventors who share the name “KAU DERCHANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
19 patentsUS9590012B2Mar 7, 2017
Self-aligned cross-point phase change memory-switch array
MICRON TECHNOLOGY INC29 citations94
US9576659B2Feb 21, 2017
Apparatuses and methods including memory access in cross point memory
MICRON TECHNOLOGY INC13 citations93
US9368554B2Jun 14, 2016
Apparatuses and methods including memory access in cross point memory
MICRON TECHNOLOGY INC15 citations93
US9306165B2Apr 5, 2016
Replacement materials processes for forming cross point memory
MICRON TECHNOLOGY INC12 citations93
US7986549B1Jul 26, 2011
Apparatus and method for refreshing or toggling a phase-change memory cell
MICRON TECHNOLOGY INC33 citations92
US10090050B2Oct 2, 2018
Apparatuses and methods including memory access in cross point memory
MICRON TECHNOLOGY INC4 citations84
US10050084B2Aug 14, 2018
Replacement materials processes for forming cross point memory
MICRON TECHNOLOGY INC4 citations84
US9905296B2Feb 27, 2018
Apparatuses and methods including memory access in cross point memory
MICRON TECHNOLOGY INC6 citations84
US9734907B2Aug 15, 2017
Apparatuses and methods including memory access in cross point memory
MICRON TECHNOLOGY INC8 citations84
US9653127B1May 16, 2017
Methods and apparatuses for modulating threshold voltages of memory cells
MICRON TECHNOLOGY INC7 citations82
US11354040B2Jun 7, 2022
Apparatuses and methods for concurrently accessing multiple partitions of a non-volatile memory
MICRON TECHNOLOGY INC2 citations73
US10719237B2Jul 21, 2020
Apparatuses and methods for concurrently accessing multiple partitions of a non-volatile memory
MICRON TECHNOLOGY INC2 citations73
US10475853B2Nov 12, 2019
Replacement materials processes for forming cross point memory
MICRON TECHNOLOGY INC2 citations73
US9659997B2May 23, 2017
Replacement materials processes for forming cross point memory
MICRON TECHNOLOGY INC3 citations73
US9905280B2Feb 27, 2018
Methods and apparatuses for modulating threshold voltages of memory cells
MICRON TECHNOLOGY INC2 citations71
US11563055B2Jan 24, 2023
Self-aligned cross-point phase change memory-switch array
MICRON TECHNOLOGY INC0 citations63
US10163507B1Dec 25, 2018
Apparatuses and methods including memory access in cross point memory
MICRON TECHNOLOGY INC1 citations63
US11768603B2Sep 26, 2023
Apparatuses and methods for concurrently accessing multiple partitions of a non-volatile memory
MICRON TECHNOLOGY INC0 citations62
US10783965B2Sep 22, 2020
Apparatuses and methods including memory access in cross point memory
MICRON TECHNOLOGY INC0 citations52
INTEL CORP
18 patentsUS8385100B2Feb 26, 2013
Energy-efficient set write of phase change memory with switch
INTEL CORP77 citations95
US9142271B1Sep 22, 2015
Reference architecture in a cross-point memory
INTEL CORP26 citations92
US6911695B2Jun 28, 2005
Transistor having insulating spacers on gate sidewalls to reduce overlap between the gate and doped extension regions of the source and drain
INTEL CORP25 citations92
US9747978B2Aug 29, 2017
Reference architecture in a cross-point memory
INTEL CORP5 citations84
US8374022B2Feb 12, 2013
Programming phase change memories using ovonic threshold switches
INTEL CORP17 citations82
US9368205B2Jun 14, 2016
Set and reset operation in phase change memory and associated techniques and configurations
INTEL CORP6 citations81
US7547597B2Jun 16, 2009
Direct alignment scheme between multiple lithography layers
INTEL CORP8 citations81
US9698344B2Jul 4, 2017
Dielectric thin film on electrodes for resistance change memory devices
INTEL CORP2 citations73
US9613698B2Apr 4, 2017
Set and reset operation in phase change memory and associated techniques and configurations
INTEL CORP3 citations70
US10877352B2Dec 29, 2020
Semiconductor photonic devices using phase change materials
INTEL CORP2 citations69
US11276465B1Mar 15, 2022
Device, system and method to float a decoder for deselected address lines in a three-dimensional crosspoint memory architecture
INTEL CORP1 citations63
US11010061B2May 18, 2021
Scalable bandwidth non-volatile memory
INTEL CORP0 citations63
US7751226B2Jul 6, 2010
Reading phase change memories with select devices
INTEL CORP4 citations63
US12153823B2Nov 26, 2024
Multi-level memory programming and readout
INTEL CORP1 citations60
US7087943B2Aug 8, 2006
Direct alignment scheme between multiple lithography layers
INTEL CORP2 citations60
US11114143B2Sep 7, 2021
Bipolar decoder for crosspoint memory cells
INTEL CORP0 citations59
US11900998B2Feb 13, 2024
Bipolar decoder for crosspoint memory
INTEL CORP1 citations56
US12268011B2Apr 1, 2025
Pillar select transistor for 3-dimensional cross point memory
INTEL CORP0 citations52
KAU DERCHANG
4 patentsUS8649212B2Feb 11, 2014
Method, apparatus and system to determine access information for a phase change memory
KAU DERCHANG72 citations98
US8605531B2Dec 10, 2013
Fast verify for phase change memory with switch
KAU DERCHANG61 citations98
US9245926B2Jan 26, 2016
Apparatuses and methods including memory access in cross point memory
KAU DERCHANG28 citations97
US9287498B2Mar 15, 2016
Dielectric thin film on electrodes for resistance change memory devices
KAU DERCHANG9 citations84
LEE JONG-WON SEAN
2 patentsZENG RAYMOND W
1 patentLEE JONG WON
1 patentOVONYX INC
1 patentST MICROELECTRONICS SRL
1 patentKUO CHARLES C
1 patentSUNDARAM RAJESH
1 patentKALB JOHANNES A
1 patentShowing the top 50 of 57 patents by PatentIndex Score.