P

Inventor

KAU DERCHANG

US57 patents
⚠️ This page may combine multiple inventors who share the name “KAU DERCHANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

19 patents
US9590012B2Mar 7, 2017

Self-aligned cross-point phase change memory-switch array

MICRON TECHNOLOGY INC29 citations94
US9576659B2Feb 21, 2017

Apparatuses and methods including memory access in cross point memory

MICRON TECHNOLOGY INC13 citations93
US9368554B2Jun 14, 2016

Apparatuses and methods including memory access in cross point memory

MICRON TECHNOLOGY INC15 citations93
US9306165B2Apr 5, 2016

Replacement materials processes for forming cross point memory

MICRON TECHNOLOGY INC12 citations93
US7986549B1Jul 26, 2011

Apparatus and method for refreshing or toggling a phase-change memory cell

MICRON TECHNOLOGY INC33 citations92
US10090050B2Oct 2, 2018

Apparatuses and methods including memory access in cross point memory

MICRON TECHNOLOGY INC4 citations84
US10050084B2Aug 14, 2018

Replacement materials processes for forming cross point memory

MICRON TECHNOLOGY INC4 citations84
US9905296B2Feb 27, 2018

Apparatuses and methods including memory access in cross point memory

MICRON TECHNOLOGY INC6 citations84
US9734907B2Aug 15, 2017

Apparatuses and methods including memory access in cross point memory

MICRON TECHNOLOGY INC8 citations84
US9653127B1May 16, 2017

Methods and apparatuses for modulating threshold voltages of memory cells

MICRON TECHNOLOGY INC7 citations82
US11354040B2Jun 7, 2022

Apparatuses and methods for concurrently accessing multiple partitions of a non-volatile memory

MICRON TECHNOLOGY INC2 citations73
US10719237B2Jul 21, 2020

Apparatuses and methods for concurrently accessing multiple partitions of a non-volatile memory

MICRON TECHNOLOGY INC2 citations73
US10475853B2Nov 12, 2019

Replacement materials processes for forming cross point memory

MICRON TECHNOLOGY INC2 citations73
US9659997B2May 23, 2017

Replacement materials processes for forming cross point memory

MICRON TECHNOLOGY INC3 citations73
US9905280B2Feb 27, 2018

Methods and apparatuses for modulating threshold voltages of memory cells

MICRON TECHNOLOGY INC2 citations71
US11563055B2Jan 24, 2023

Self-aligned cross-point phase change memory-switch array

MICRON TECHNOLOGY INC0 citations63
US10163507B1Dec 25, 2018

Apparatuses and methods including memory access in cross point memory

MICRON TECHNOLOGY INC1 citations63
US11768603B2Sep 26, 2023

Apparatuses and methods for concurrently accessing multiple partitions of a non-volatile memory

MICRON TECHNOLOGY INC0 citations62
US10783965B2Sep 22, 2020

Apparatuses and methods including memory access in cross point memory

MICRON TECHNOLOGY INC0 citations52

INTEL CORP

18 patents
US8385100B2Feb 26, 2013

Energy-efficient set write of phase change memory with switch

INTEL CORP77 citations95
US9142271B1Sep 22, 2015

Reference architecture in a cross-point memory

INTEL CORP26 citations92
US6911695B2Jun 28, 2005

Transistor having insulating spacers on gate sidewalls to reduce overlap between the gate and doped extension regions of the source and drain

INTEL CORP25 citations92
US9747978B2Aug 29, 2017

Reference architecture in a cross-point memory

INTEL CORP5 citations84
US8374022B2Feb 12, 2013

Programming phase change memories using ovonic threshold switches

INTEL CORP17 citations82
US9368205B2Jun 14, 2016

Set and reset operation in phase change memory and associated techniques and configurations

INTEL CORP6 citations81
US7547597B2Jun 16, 2009

Direct alignment scheme between multiple lithography layers

INTEL CORP8 citations81
US9698344B2Jul 4, 2017

Dielectric thin film on electrodes for resistance change memory devices

INTEL CORP2 citations73
US9613698B2Apr 4, 2017

Set and reset operation in phase change memory and associated techniques and configurations

INTEL CORP3 citations70
US10877352B2Dec 29, 2020

Semiconductor photonic devices using phase change materials

INTEL CORP2 citations69
US11276465B1Mar 15, 2022

Device, system and method to float a decoder for deselected address lines in a three-dimensional crosspoint memory architecture

INTEL CORP1 citations63
US11010061B2May 18, 2021

Scalable bandwidth non-volatile memory

INTEL CORP0 citations63
US7751226B2Jul 6, 2010

Reading phase change memories with select devices

INTEL CORP4 citations63
US12153823B2Nov 26, 2024

Multi-level memory programming and readout

INTEL CORP1 citations60
US7087943B2Aug 8, 2006

Direct alignment scheme between multiple lithography layers

INTEL CORP2 citations60
US11114143B2Sep 7, 2021

Bipolar decoder for crosspoint memory cells

INTEL CORP0 citations59
US11900998B2Feb 13, 2024

Bipolar decoder for crosspoint memory

INTEL CORP1 citations56
US12268011B2Apr 1, 2025

Pillar select transistor for 3-dimensional cross point memory

INTEL CORP0 citations52

KAU DERCHANG

4 patents

LEE JONG-WON SEAN

2 patents

ZENG RAYMOND W

1 patent

LEE JONG WON

1 patent

OVONYX INC

1 patent

ST MICROELECTRONICS SRL

1 patent

KUO CHARLES C

1 patent

SUNDARAM RAJESH

1 patent

KALB JOHANNES A

1 patent

Showing the top 50 of 57 patents by PatentIndex Score.