Inventor
FUJIMOTO TATSUO
JP33 patents
⚠️ This page may combine multiple inventors who share the name “FUJIMOTO TATSUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SHOWA DENKO KK
8 patentsUS10626520B2Apr 21, 2020
Method for producing epitaxial silicon carbide single crystal wafer
SHOWA DENKO KK6 citations72
US10435813B2Oct 8, 2019
Epitaxial growth method for silicon carbide
SHOWA DENKO KK2 citations72
US11114295B2Sep 7, 2021
Epitaxial silicon carbide single crystal wafer and process for producing the same
SHOWA DENKO KK0 citations62
US10711369B2Jul 14, 2020
Method for producing silicon carbide single crystal and silicon carbide single crystal substrate
SHOWA DENKO KK1 citations62
US10727047B2Jul 28, 2020
Epitaxial silicon carbide single crystal wafer and process for producing the same
SHOWA DENKO KK0 citations51
US10066316B2Sep 4, 2018
Method for producing silicon carbide single-crystal ingot and silicon carbide single-crystal ingot
SHOWA DENKO KK0 citations48
US10450672B2Oct 22, 2019
Method for producing epitaxial silicon carbide wafers
SHOWA DENKO KK0 citations41
US10119200B2Nov 6, 2018
Silicon carbide single crystal substrate and process for producing same
SHOWA DENKO KK0 citations41
NIPPON STEEL CORP
6 patentsUS5049203ASep 17, 1991
Method of making rare earth magnets
NIPPON STEEL CORP26 citations92
US7972704B2Jul 5, 2011
Single-crystal silicon carbide ingot, and substrate and epitaxial wafer obtained therefrom
NIPPON STEEL CORP10 citations83
US5201963AApr 13, 1993
Rare earth magnets and method of producing same
NIPPON STEEL CORP10 citations73
US7794842B2Sep 14, 2010
Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of same
NIPPON STEEL CORP2 citations61
US7799305B2Sep 21, 2010
Silicon carbide single crystal and single crystal wafer
NIPPON STEEL CORP0 citations51
US8044408B2Oct 25, 2011
SiC single-crystal substrate and method of producing SiC single-crystal substrate
NIPPON STEEL CORP0 citations49
NAKABAYASHI MASASHI
6 patentsUS9777403B2Oct 3, 2017
Single-crystal silicon carbide and single-crystal silicon carbide wafer
NAKABAYASHI MASASHI2 citations71
US9068277B2Jun 30, 2015
Apparatus for manufacturing single-crystal silicon carbide
NAKABAYASHI MASASHI2 citations61
US8795624B2Aug 5, 2014
Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same
NAKABAYASHI MASASHI1 citations60
US8673254B2Mar 18, 2014
Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same
NAKABAYASHI MASASHI3 citations60
US8491719B2Jul 23, 2013
Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of same
NAKABAYASHI MASASHI0 citations50
US8178389B2May 15, 2012
Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same
NAKABAYASHI MASASHI0 citations50
MITSUBISHI ELECTRIC CORP
5 patentsUS11667298B2Jun 6, 2023
Driver posture measurement device and vehicle control device
MITSUBISHI ELECTRIC CORP0 citations59
US12233868B2Feb 25, 2025
Driving-assistance control apparatus
MITSUBISHI ELECTRIC CORP0 citations48
US12134382B2Nov 5, 2024
Driving support device
MITSUBISHI ELECTRIC CORP0 citations48
US11454184B2Sep 27, 2022
Control device for an internal combustion engine
MITSUBISHI ELECTRIC CORP0 citations45
US10989627B2Apr 27, 2021
Controller which determines a misfire for an internal combustion engine
MITSUBISHI ELECTRIC CORP0 citations44
AIGO TAKASHI
3 patentsUS9691607B2Jun 27, 2017
Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the same
AIGO TAKASHI2 citations69
US8901570B2Dec 2, 2014
Epitaxial silicon carbide single crystal substrate and process for producing the same
AIGO TAKASHI5 citations69
US8927396B2Jan 6, 2015
Production process of epitaxial silicon carbide single crystal substrate
AIGO TAKASHI0 citations49