Inventor
KATSUNO MASAKAZU
JP12 patents
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AIGO TAKASHI
3 patentsUS9691607B2Jun 27, 2017
Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the same
AIGO TAKASHI2 citations69
US8901570B2Dec 2, 2014
Epitaxial silicon carbide single crystal substrate and process for producing the same
AIGO TAKASHI5 citations69
US8927396B2Jan 6, 2015
Production process of epitaxial silicon carbide single crystal substrate
AIGO TAKASHI0 citations49