Inventor
TSUGE HIROSHI
JP31 patents
⚠️ This page may combine multiple inventors who share the name “TSUGE HIROSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKAI RIKA CO LTD
11 patentsUS6621176B1Sep 16, 2003
Input device for use in vehicles for inputting settings pertaining to driver's intention of acceleration and deceleration
TOKAI RIKA CO LTD28 citations92
US5086548AFeb 11, 1992
Buckle device for seatbelt system
TOKAI RIKA CO LTD32 citations92
US4775183AOct 4, 1988
Child passenger seat for vehicle
TOKAI RIKA CO LTD25 citations92
US4688849AAug 25, 1987
Child passenger securing apparatus for use in vehicle
TOKAI RIKA CO LTD31 citations92
US4685741AAug 11, 1987
Child passenger securing apparatus
TOKAI RIKA CO LTD49 citations92
US4613188ASep 23, 1986
Child restraining device
TOKAI RIKA CO LTD37 citations92
US4991874AFeb 12, 1991
Webbing retractor
TOKAI RIKA CO LTD12 citations74
US4398680AAug 16, 1983
Webbing locking device
TOKAI RIKA CO LTD13 citations74
US4993656AFeb 19, 1991
Webbing retractor
TOKAI RIKA CO LTD12 citations73
US6770991B2Aug 3, 2004
Roll connector structure for a vehicle
TOKAI RIKA CO LTD0 citations52
US4438949AMar 27, 1984
Automatically fastening seatbelt system
TOKAI RIKA CO LTD1 citations51
TOYOTA MOTOR CO LTD
5 patentsUS4437684AMar 20, 1984
Automatic seatbelt system
TOYOTA MOTOR CO LTD7 citations73
US4387790AJun 14, 1983
Webbing locking device
TOYOTA MOTOR CO LTD9 citations73
US4371126AFeb 1, 1983
Webbing lock device
TOYOTA MOTOR CO LTD9 citations73
US4536010AAug 20, 1985
Automatic seatbelt system
TOYOTA MOTOR CO LTD8 citations72
US4437683AMar 20, 1984
Automatic seatbelt system
TOYOTA MOTOR CO LTD4 citations63
AIGO TAKASHI
3 patentsUS9691607B2Jun 27, 2017
Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the same
AIGO TAKASHI2 citations69
US8901570B2Dec 2, 2014
Epitaxial silicon carbide single crystal substrate and process for producing the same
AIGO TAKASHI5 citations69
US8927396B2Jan 6, 2015
Production process of epitaxial silicon carbide single crystal substrate
AIGO TAKASHI0 citations49
SHOWA DENKO KK
3 patentsUS10711369B2Jul 14, 2020
Method for producing silicon carbide single crystal and silicon carbide single crystal substrate
SHOWA DENKO KK1 citations62
US10066316B2Sep 4, 2018
Method for producing silicon carbide single-crystal ingot and silicon carbide single-crystal ingot
SHOWA DENKO KK0 citations48
US10119200B2Nov 6, 2018
Silicon carbide single crystal substrate and process for producing same
SHOWA DENKO KK0 citations41