Inventor
OSTERMAYR MARTIN
US32 patents
⚠️ This page may combine multiple inventors who share the name “OSTERMAYR MARTIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
16 patentsUS7816198B2Oct 19, 2010
Semiconductor device and method for manufacturing the same
INFINEON TECHNOLOGIES AG10 citations84
US7692974B2Apr 6, 2010
Memory cell, memory device, device and method of accessing a memory cell
INFINEON TECHNOLOGIES AG19 citations83
US7440334B2Oct 21, 2008
Multi-transistor memory cells
INFINEON TECHNOLOGIES AG15 citations83
US7674703B1Mar 9, 2010
Gridded contacts in semiconductor devices
INFINEON TECHNOLOGIES AG9 citations82
US7304342B2Dec 4, 2007
Semiconductor memory cell and associated fabrication method
INFINEON TECHNOLOGIES AG14 citations82
US6906942B2Jun 14, 2005
Programmable mask ROM building element and process of manufacture
INFINEON TECHNOLOGIES AG7 citations73
US7675799B2Mar 9, 2010
Method of operating a memory cell, memory cell and memory unit
INFINEON TECHNOLOGIES AG4 citations63
US7327593B2Feb 5, 2008
ROM memory cell having defined bit line voltages
INFINEON TECHNOLOGIES AG6 citations63
US7995366B2Aug 9, 2011
Homogenous cell array
INFINEON TECHNOLOGIES AG4 citations62
US7161824B2Jan 9, 2007
Method for programming a memory arrangement and programmed memory arrangement
INFINEON TECHNOLOGIES AG2 citations62
US7531420B2May 12, 2009
Semiconductor memory cell and corresponding method of producing same
INFINEON TECHNOLOGIES AG4 citations61
US7655563B2Feb 2, 2010
Method for preventing the formation of dentrites in a semiconductor
INFINEON TECHNOLOGIES AG2 citations60
US7394682B2Jul 1, 2008
Bit line dummy core-cell and method for producing a bit line dummy core-cell
INFINEON TECHNOLOGIES AG5 citations60
US8765548B2Jul 1, 2014
Capacitors and methods of manufacture thereof
INFINEON TECHNOLOGIES AG0 citations52
US7606107B2Oct 20, 2009
Memory cell, read device for memory cell, memory assembly, and corresponding method
INFINEON TECHNOLOGIES AG0 citations52
US6448617B1Sep 10, 2002
Semiconductor read-only memory configuration with substrate contacts and polysilicon bridge cells
INFINEON TECHNOLOGIES AG1 citations42
INTEL CORP
6 patentsUS12382712B2Aug 5, 2025
Semiconductor dies and devices with frontside and backside coils for inductive coupling
INTEL CORP0 citations60
US12568663B2Mar 3, 2026
Threshold voltage tuning for nanoribbon-based transistors
INTEL CORP0 citations59
US12347796B2Jul 1, 2025
Semiconductor dies and devices with a coil for inductive coupling
INTEL CORP0 citations59
US12362241B2Jul 15, 2025
Semiconductor structure and method for forming a semiconductor structure
INTEL CORP0 citations58
US12581929B2Mar 17, 2026
Semiconductor devices and methods for forming a semiconductor device
INTEL CORP0 citations49
US12431424B2Sep 30, 2025
Buried power rails integrated with decoupling capacitance
INTEL CORP0 citations49
OSTERMAYR MARTIN
4 patentsUS8531907B2Sep 10, 2013
Semiconductor memory device and method
OSTERMAYR MARTIN4 citations59
US8846462B2Sep 30, 2014
Transistor level routing
OSTERMAYR MARTIN0 citations50
US8546916B2Oct 1, 2013
Capacitors and methods of manufacture thereof
OSTERMAYR MARTIN0 citations50
US8076730B2Dec 13, 2011
Transistor level routing
OSTERMAYR MARTIN0 citations40
INTEL IP CORP
2 patentsUS10347312B2Jul 9, 2019
Memory circuit and method for operating a first MRAM and a second MRAM set of memory cells configured to operate in a direct access mode and/or refresh mode
INTEL IP CORP0 citations52
US9824737B2Nov 21, 2017
Memory circuit and method for operating a first and a second set of memory cells in direct memory access mode with refresh
INTEL IP CORP0 citations52