Inventor

HYUN SANG-JIN

KR93 patents

⚠️ This page may combine multiple inventors who share the name “HYUN SANG-JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HYUN SANG-JIN

SAMSUNG ELECTRONICS CO LTD

Integrated circuit device and method of fabricating the same

Integrated circuit devices and method of manufacturing the same

Semiconductor devices including recessed source/drain silicides and methods of forming the same

Method of fabricating semiconductor device having dual gate

Methods of fabricating oxide layers by plasma nitridation and oxidation

Semiconductor devices

Semiconductor device

Semiconductor devices

Semiconductor devices having work function metal films and tuning materials

Integrated circuit device

Integrated circuit devices having a Fin-type active region and methods of manufacturing the same

Semiconductor devices including a device isolation region in a substrate and/or fin

Fin-type field effect transistors including aluminum doped metal-containing layer

Semiconductor device including work function adjusting metal gate structure

CMOS transistor, semiconductor device including the transistor, and semiconductor module including the device

Semiconductor device and method of fabricating the same

Semiconductor device

Semiconductor device and method for fabricating the same

Semiconductor devices

Semiconductor device and method for fabricating the same

Methods of manufacturing integrated circuit devices having a fin-type active region

Semiconductor devices having multi-threshold voltage

Semiconductor devices including contact structures that partially overlap silicide layers

Semiconductor device including conductive structure having nucleation structure and method of forming the same

Integrated circuit device having fin-type active

Semiconductor device and method of fabricating the same

Semiconductor device

Semiconductor devices with nanowires and methods for fabricating the same

Integrated circuit device and method of manufacturing the same

Gas distribution apparatus and substrate processing apparatus including the same

Semiconductor device and method for fabricating the same

Semiconductor device and method of manufacturing the same

Semiconductor devices with nanowires and with metal layers having different grain sizes

Semiconductor device and method for fabricating the same

Semiconductor device including contact plug and method of manufacturing the same

Semiconductor devices including active areas with increased contact area

Finfet semiconductor device and method of manufacturing the same

Semiconductor device having vertical channel

Method of fabricating semiconductor device having dual gate

NA HOON-JOO

Methods for manufacturing semiconductor devices using etch stop dielectric layers and related devices

Methods of forming semiconductor devices having gates with different work functions using selective injection of diffusion inhibiting materials

PARK MOON-KYU

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO INC

Methods of forming an oxide layer in a transistor having a recessed gate

KIM WAN-DON

Semiconductor devices having work function metal films and tuning materials

PARK HONG-BAE

Complementary metal oxide semiconductor device having metal gate stack structure and method of manufacturing the same

LEE HYE-LAN

CMOS transistor, semiconductor device including the transistor, and semiconductor module including the device

LEE DONG-SOO

Integrated circuit device having an interfacial layer and method of manufacturing the same

HONG HYUNG-SEOK

Semiconductor device and method of fabricating the same

SON HYEOK-JUN

Semiconductor devices including a rare earth element and methods of forming semiconductor devices including a rare earth element

LEE DO-SUN

Semiconductor devices including contact structures that partially overlap silicide layers