Inventor

DUSSARRAT CHRISTIAN

JP93 patents

⚠️ This page may combine multiple inventors who share the name “DUSSARRAT CHRISTIAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

DUSSARRAT CHRISTIAN

AIR LIQUIDE

Hexakis(monohydrocarbylamino) disilanes and method for the preparation thereof

Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition

Method for forming dielectric or metallic films

Hexakis(monohydrocarbylamino)disilanes and method for the preparation thereof

Method for depositing silicon nitride films and silicon oxynitride films by chemical vapor deposition

Methods of forming dielectric films, new precursors and their use in semiconductor manufacturing

Fluorocarbon molecules for high aspect ratio oxide etch

Method for producing silicon nitride films

Group 6 transition metal-containing compounds for vapor deposition of group 6 transition metal-containing films

High C content molecules for C implant

Metal precursors for semiconductor applications

Precursor for film formation and method for forming ruthenium-containing film

Method for depositing silicon nitride films and/or silicon oxynitride films by chemical vapor deposition

Aluminum implant using new compounds

Method of forming dielectric films, new precursors and their use in semiconductor manufacturing

Indium compound and method for forming indium-containing film using said indium compounds

Cobalt precursors for semiconductor applications

Method for forming a dielectric film and novel precursors for implementing said method

Lanthanoid compound, lanthanoid-containing thin film and formation of lanthanoid-containing thin film using the lanthanoid compound

Method for producing silicon nitride films and process for fabricating semiconductor devices using said method

Group 6 transition metal-containing compounds for vapor deposition of group 6 transition metal-containing films

Group 6 transition metal-containing compounds for vapor deposition of group 6 transition metal-containing films

DUSSARRAT CHRISTIAN

Method of forming dielectric films, new precursors and their use in semiconductor manufacturing

Method of forming silicon oxide containing films

Tellurium precursors for GST deposition

Pentakis(dimethylamino) disilane precursor comprising compound and method for the preparation thereof

Method of depositing a metal-containing dielectric film

Metal precursors for semiconductor applications

Methods of making and deposition methods using hafnium- or zirconium-containing compounds

Method for the deposition of a ruthenium containing film

Cyclopentadienyl transition metal precursors for deposition of transition metal-containing films

Heteroleptic cyclopentadienyl transition metal precursors for deposition of transition metal-containing films

AIR LIQUIDE AMERICAN

Organosilane precursors for ALD/CVD silicon-containing film applications

Preparation of cerium-containing precursors and deposition of cerium-containing films

Purification of trimethylamine

Fluorocarbon molecules for high aspect ratio oxide etch

Chemistries for TSV/MEMS/power device etching

Chemistries for TSV/MEMS/power device etching

Hexacoordinate silicon-containing precursors for ALD/CVD silicon-containing film applications

Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films

Preparation of cerium-containing precursor and deposition of cerium-containing films

L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

Germanium- and zirconium-containing compositions for vapor deposition of zirconium-containing films

Method of forming dielectric films, new precursors and their use in semiconductor manufacturing

Silicon- and Zirconium-containing compositions for vapor deposition of Zirconium-containing films

PALLEM VENKATESWARA R

Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films

Titanium-containing precursors for vapor deposition

GATINEAU SATOKO

Deposition of ternary oxide films containing ruthenium and alkali earth metals

Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process

BLASCO NICOLAS

Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing

L AIR LIQUIDE SOCIÉTÉ ANONYME POUR L ETUDE ET L EXPL DES PROCÉDÉS GEORGES CLAUDE

Method for the deposition of a ruthenium-containing film