Inventor

BLASCO NICOLAS

FR36 patents

⚠️ This page may combine multiple inventors who share the name “BLASCO NICOLAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BLASCO NICOLAS

AIR LIQUIDE

Methods of forming dielectric films, new precursors and their use in semiconductor manufacturing

High C content molecules for C implant

Preparation of Si—H containing iodosilanes via halide exchange reaction

Titanium-containing film forming compositions for vapor deposition of titanium-containing films

Aluminum implant using new compounds

Tungsten pentachloride conditioning and crystalline phase manipulation

Tungsten pentachloride conditioning and crystalline phase manipulation

Tungsten pentachloride conditioning and crystalline phase manipulation

Method of forming dielectric films, new precursors and their use in semiconductor manufacturing

Low pressure process for synthesis of Pt(PF3)4 involving a soluble intermediate and storage of obtained Pt(PF3)4

Low pressure process for synthesis of Pt(PF3)4 involving a soluble intermediate and storage of obtained Pt(PF3)4

Titanium-containing film forming compositions for vapor deposition of titanium-containing films

Titanium-containing film forming compositions for vapor deposition of titanium-containing films

Preprocessing method for solid material, and solid material product filled with solid material manufactured using said solid material preprocessing method

Tungsten pentachloride conditioning and crystalline phase manipulation

Devices having a rare earth (oxy) fluoride coating for improved resistance to corrosive chemical environments and methods for making and using these devices

Group 6 transition metal-containing compositions for vapor deposition of group 6 transition metal-containing films

Reagents to remove oxygen from metal oxyhalide precursors in thin film deposition processes

Group 6 transition metal-containing compositions for vapor deposition of group 6 transition metal-containing films

Etching reactants and plasma-free etching processes using the same

Preparation of Si-H containing iodosilanes via halide exchange reaction

Lithium precursors for deposition of lithium-containing layers, islets or clusters

Ge-containing Co-film forming material, Ge-containing Co film and film forming method thereof

BLASCO NICOLAS

Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing

Niobium and vanadium organometallic precursors for thin film deposition

Method of forming a tantalum-containing layer on a substrate

L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

Method of forming dielectric films, new precursors and their use in semiconductor manufacturing

Cobalt-containing film forming compositions, their synthesis, and use in film deposition

Method for forming cobalt containing films

DUSSARRAT CHRISTIAN

Method of forming dielectric films, new precursors and their use in semiconductor manufacturing

Method of depositing a metal-containing dielectric film

AIR LIQUIDE AMERICAN

Methods of using amino(bromo)silane precursors for ALD/CVD silicon-containing film applications

Silicon-based self-assembling monolayer compositions and surface preparation using the same

GATINEAU SATOKO

Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process

L AIR LIQUIDE SOCIÉTÉ ANONYME POUR L ETUDE ET L EXPL DES PROCÉDÉS GEORGES CLAUDE

Niobium and vanadium organometallic precursors for thin film deposition

MERLE NICOLAS

Use of group V metal containing precursors for a process of depositing a metal containing film