Inventor

THEES HANS-JUERGEN

DE30 patents

⚠️ This page may combine multiple inventors who share the name “THEES HANS-JUERGEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

THEES HANS-JUERGEN

GLOBALFOUNDRIES INC

Junction formation with reduced CEFF for 22NM FDSOI devices

Semiconductor structure including a nonvolatile memory cell and method for the formation thereof

Semiconductor structure including a nonvolatile memory cell having a charge trapping layer and method for the formation thereof

Junction formation with reduced Ceff for 22nm FDSOI devices

Method of forming a semiconductor device structure and semiconductor device structure

Semiconductor device with interconnect to source/drain

Cap removal for gate electrode structures with reduced complexity

Methods of forming metal silicide regions on a semiconductor device

Method of forming a semiconductor device and according semiconductor device

Reticles for use in forming implant masking layers and methods of forming implant masking layers

Air gap spacer implant for NZG reliability fix

INFINEON TECHNOLOGIES AG

Semiconductor device including electrode trench structure and isolation trench structure and manufacturing method therefore

Voltage-controlled switching device with channel region

Mesa contact for a power semiconductor device and method of producing a power semiconductor device

Power semiconductor device with self-aligned source region

Mesa contact for MOS controlled power semiconductor device

Power semiconductor device including first and second trench structures

THEES HANS-JUERGEN

Semiconductor devices comprising a channel semiconductor alloy formed with reduced STI topography

Methods of forming PEET devices with different structures and performance characteristics

Method of forming metal silicide regions on a semiconductor device

Method of protecting STI structures from erosion during processing operations

Enhanced patterning uniformity of gate electrodes of a semiconductor device by late gate doping

KRONHOLZ STEPHAN

Methods of epitaxially forming materials on transistor devices

Methods of forming isolation structures for semiconductor devices

High-K metal gate electrode structures formed by cap layer removal without sacrificial spacer

GLOBALFOUNDRIES US INC

Semiconductor device with novel spacer structures having novel configurations

Semiconductor device with interconnect to source/drain

INFINEON TECH DRESDEN GMBH & CO KG

Power semiconductor device having a control cell for controlling a load current

Method of processing a power semiconductor device

MAZUR MARTIN

Reticles for use in forming implant masking layers and methods of forming implant masking layers