Inventor
WON TAE YOUNG
KR23 patents
⚠️ This page may combine multiple inventors who share the name “WON TAE YOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LG CHEMICAL LTD
15 patentsUS9114381B2Aug 25, 2015
Super absorbent polymer
LG CHEMICAL LTD6 citations84
US9517446B2Dec 13, 2016
Super absorbent polymer and a preparation method thereof
LG CHEMICAL LTD6 citations83
US9624328B2Apr 18, 2017
Superabsorbent polymer
LG CHEMICAL LTD6 citations73
US12454585B2Oct 28, 2025
Polymerization reactor for production of super absorbent polymer
LG CHEMICAL LTD0 citations52
US9109097B2Aug 18, 2015
Method of preparing super absorbent polymer
LG CHEMICAL LTD0 citations52
US10086361B2Oct 2, 2018
Super absorbent polymer and a preparation method thereof
LG CHEMICAL LTD1 citations51
US9120100B2Sep 1, 2015
Shredder for super absorbent polymer and preparation method of super absorbent polymer using the same
LG CHEMICAL LTD1 citations51
US10894844B2Jan 19, 2021
Superabsorbent polymer and preparation method thereof
LG CHEMICAL LTD0 citations50
US12410286B2Sep 9, 2025
Method for preparation of super absorbent polymer
LG CHEMICAL LTD0 citations49
US11383221B2Jul 12, 2022
Preparation method of super absorbent polymer
LG CHEMICAL LTD0 citations49
US11891487B2Feb 6, 2024
Preparation method of super absorbent polymer and super absorbent polymer therefrom
LG CHEMICAL LTD0 citations48
US12030967B2Jul 9, 2024
Preparation method of super absorbent polymer
LG CHEMICAL LTD0 citations47
US11718694B2Aug 8, 2023
Super absorbent polymer and preparation method thereof
LG CHEMICAL LTD0 citations47
US9708452B2Jul 18, 2017
Method of preparing superabsorbent polymer
LG CHEMICAL LTD0 citations41
US9808786B2Nov 7, 2017
Preparation method of superabsorbent polymer
LG CHEMICAL LTD0 citations39
SAMSUNG ELECTRONICS CO LTD
3 patentsUS5621236AApr 15, 1997
Gate-to-drain overlapped MOS transistor fabrication process and structure thereby
SAMSUNG ELECTRONICS CO LTD18 citations90
US5256586AOct 26, 1993
Gate-to-drain overlapped MOS transistor fabrication process
SAMSUNG ELECTRONICS CO LTD22 citations90
US5147809ASep 15, 1992
Method of producing a bipolar transistor with a laterally graded emitter (LGE) employing a refill method of polycrystalline silicon
SAMSUNG ELECTRONICS CO LTD15 citations67
WON TAE-YOUNG
3 patentsUS8697812B2Apr 15, 2014
Preparation method of superabsorbent polymer
WON TAE-YOUNG2 citations59
US8829066B2Sep 9, 2014
Polymerization reactor for producing super absorbent polymers and method of producing super absorbent polymers using the polymerization reactor
WON TAE-YOUNG0 citations49
US9029480B2May 12, 2015
Preparation method of superabsorbent polymer
WON TAE-YOUNG0 citations38