Inventor
CAYMAX MATTY
BE25 patents
⚠️ This page may combine multiple inventors who share the name “CAYMAX MATTY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IMEC INTER UNI MICRO ELECTR
7 patentsUS6194722B1Feb 27, 2001
Method of fabrication of an infrared radiation detector and infrared detector device
IMEC INTER UNI MICRO ELECTR172 citations98
US7320896B2Jan 22, 2008
Infrared radiation detector
IMEC INTER UNI MICRO ELECTR18 citations92
US7075081B2Jul 11, 2006
Method of fabrication of an infrared radiation detector and infrared detector device
IMEC INTER UNI MICRO ELECTR21 citations92
US6884636B2Apr 26, 2005
Method of fabrication of an infrared radiation detector and infrared detector device
IMEC INTER UNI MICRO ELECTR23 citations92
US6274462B1Aug 14, 2001
Method of fabrication of an infrared radiation detector and infrared detector device
IMEC INTER UNI MICRO ELECTR15 citations92
US7176111B2Feb 13, 2007
Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof
IMEC INTER UNI MICRO ELECTR16 citations81
US6815247B2Nov 9, 2004
Thin-film opto-electronic device and a method of making it
IMEC INTER UNI MICRO ELECTR3 citations59
IMEC
5 patentsUS7579285B2Aug 25, 2009
Atomic layer deposition method for depositing a layer
IMEC464 citations98
US8007865B2Aug 30, 2011
Atomic layer deposition (ALD) method and reactor for producing a high quality layer
IMEC9 citations82
US9425314B2Aug 23, 2016
Passivated III-V or Ge fin-shaped field effect transistor
IMEC3 citations72
US9028623B2May 12, 2015
Oxygen monolayer on a semiconductor
IMEC2 citations61
US8962369B2Feb 24, 2015
Method for doping semiconductor structures and the semiconductor device thereof
IMEC3 citations59
IMEC VZW
4 patentsUS6683367B1Jan 27, 2004
Thin-film opto-electronic device and a method of making it
IMEC VZW18 citations89
US12112946B2Oct 8, 2024
Deposition of highly crystalline 2D materials
IMEC VZW0 citations51
US9984874B2May 29, 2018
Method of producing transition metal dichalcogenide layer
IMEC VZW0 citations45
US9431519B2Aug 30, 2016
Method of producing a III-V fin structure
IMEC VZW0 citations37