Inventor
IWAMURO NORIYUKI
JP46 patents
⚠️ This page may combine multiple inventors who share the name “IWAMURO NORIYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJI ELECTRIC CO LTD
34 patentsUS6054728AApr 25, 2000
Insulated gate thyristor
FUJI ELECTRIC CO LTD56 citations95
US5981984ANov 9, 1999
Insulated gate thyristor
FUJI ELECTRIC CO LTD25 citations92
US5936267AAug 10, 1999
Insulated gate thyristor
FUJI ELECTRIC CO LTD27 citations92
US5914503AJun 22, 1999
Insulated gate thyristor
FUJI ELECTRIC CO LTD48 citations92
US5874751AFeb 23, 1999
Insulated gate thyristor
FUJI ELECTRIC CO LTD25 citations92
US5659185AAug 19, 1997
Insulated Gate thyristor
FUJI ELECTRIC CO LTD21 citations92
US5644150AJul 1, 1997
Insulated gate thyristor
FUJI ELECTRIC CO LTD22 citations92
US6072199AJun 6, 2000
Insulated gate bipolar transistor
FUJI ELECTRIC CO LTD16 citations84
US5637888AJun 10, 1997
Insulated gate thyristor
FUJI ELECTRIC CO LTD7 citations74
US5614738AMar 25, 1997
Insulated gate thyristor having a polysilicon resistor connected to its base
FUJI ELECTRIC CO LTD8 citations74
US5326993AJul 5, 1994
Insulated gate bipolar transistor
FUJI ELECTRIC CO LTD19 citations74
US10263105B2Apr 16, 2019
High voltage semiconductor device
FUJI ELECTRIC CO LTD4 citations73
US9627486B2Apr 18, 2017
Semiconductor device
FUJI ELECTRIC CO LTD3 citations73
US6278140B1Aug 21, 2001
Insulated gate thyristor
FUJI ELECTRIC CO LTD9 citations73
US6242967B1Jun 5, 2001
Low on resistance high speed off switching device having unipolar transistors
FUJI ELECTRIC CO LTD14 citations73
US6091087AJul 18, 2000
Insulated gate thyristor
FUJI ELECTRIC CO LTD15 citations73
US9252266B2Feb 2, 2016
Wide band gap semiconductor device and method for producing the same
FUJI ELECTRIC CO LTD2 citations63
US6469344B2Oct 22, 2002
Semiconductor device having low on resistance high speed turn off and short switching turn off storage time
FUJI ELECTRIC CO LTD4 citations63
US6346740B1Feb 12, 2002
Semiconductor device
FUJI ELECTRIC CO LTD3 citations63
US5684306ANov 4, 1997
Insulated gate thyristor
FUJI ELECTRIC CO LTD5 citations63
US5360983ANov 1, 1994
Insulated gate bipolar transistor having a specific buffer layer resistance
FUJI ELECTRIC CO LTD6 citations63
US5306929AApr 26, 1994
MOS controlled thyristor
FUJI ELECTRIC CO LTD6 citations63
US5122854AJun 16, 1992
MOS control thyristor
FUJI ELECTRIC CO LTD2 citations63
US10211330B2Feb 19, 2019
Vertical high voltage semiconductor apparatus and fabrication method of vertical high voltage semiconductor apparatus
FUJI ELECTRIC CO LTD0 citations52
US9799732B2Oct 24, 2017
Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor device
FUJI ELECTRIC CO LTD1 citations52
US9722018B2Aug 1, 2017
Vertical high voltage semiconductor apparatus and fabrication method of vertical high voltage semiconductor apparatus
FUJI ELECTRIC CO LTD1 citations52
US9537002B2Jan 3, 2017
Semiconductor device with SiC base layer
FUJI ELECTRIC CO LTD1 citations52
US9362392B2Jun 7, 2016
Vertical high-voltage semiconductor device and fabrication method thereof
FUJI ELECTRIC CO LTD1 citations52
US8779504B2Jul 15, 2014
Semiconductor device
FUJI ELECTRIC CO LTD0 citations52
US9040402B2May 26, 2015
Fabrication method of silicon carbide semiconductor device
FUJI ELECTRIC CO LTD0 citations45
US10090417B2Oct 2, 2018
Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor device
FUJI ELECTRIC CO LTD0 citations42
US9673313B2Jun 6, 2017
Silicon carbide semiconductor device and fabrication method thereof
FUJI ELECTRIC CO LTD0 citations42
US9450051B2Sep 20, 2016
High voltage semiconductor apparatus
FUJI ELECTRIC CO LTD0 citations42
US9356100B2May 31, 2016
Semiconductor device
FUJI ELECTRIC CO LTD0 citations42
IWAMURO NORIYUKI
6 patentsUS8564028B2Oct 22, 2013
Low on-resistance wide band gap semiconductor device and method for producing the same
IWAMURO NORIYUKI6 citations83
US8431991B2Apr 30, 2013
Semiconductor device
IWAMURO NORIYUKI9 citations83
US8390027B2Mar 5, 2013
Gallium nitride semiconductor device and manufacturing method thereof
IWAMURO NORIYUKI13 citations83
US8198676B2Jun 12, 2012
P-channel silicon carbide MOSFET
IWAMURO NORIYUKI7 citations83
US8299522B2Oct 30, 2012
Semiconductor device
IWAMURO NORIYUKI3 citations62
US8188511B2May 29, 2012
Semiconductor device and method of manufacturing thereof
IWAMURO NORIYUKI5 citations62