Inventor
FUJII SHOSUKE
JP59 patents
⚠️ This page may combine multiple inventors who share the name “FUJII SHOSUKE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
25 patentsUS8835896B2Sep 16, 2014
Nonvolatile variable resistance element
TOSHIBA KK7 citations84
US9634248B2Apr 25, 2017
Insulator and memory device
TOSHIBA KK4 citations73
US9305646B2Apr 5, 2016
Semiconductor memory device
TOSHIBA KK4 citations73
US9099645B2Aug 4, 2015
Resistance random access memory device
TOSHIBA KK4 citations73
US9053786B2Jun 9, 2015
Resistance-change memory
TOSHIBA KK4 citations73
US9117848B2Aug 25, 2015
Nonvolatile semiconductor memory device and method of manufacturing the same
TOSHIBA KK3 citations63
US9082973B2Jul 14, 2015
Resistance random access memory device
TOSHIBA KK3 citations63
US8854874B2Oct 7, 2014
Nonvolatile semiconductor memory device including variable resistance element
TOSHIBA KK3 citations63
US9190615B2Nov 17, 2015
Resistance random access memory device
TOSHIBA KK2 citations61
US8860182B1Oct 14, 2014
Resistance random access memory device
TOSHIBA KK3 citations61
US9601192B2Mar 21, 2017
Resistance-change memory having on-state, off-state, and intermediate state
TOSHIBA KK0 citations52
US9412937B2Aug 9, 2016
Memory device
TOSHIBA KK1 citations52
US9391272B2Jul 12, 2016
Nonvolatile variable resistance element
TOSHIBA KK0 citations52
US9373631B2Jun 21, 2016
Nonvolatile semiconductor memory device
TOSHIBA KK0 citations52
US9230975B2Jan 5, 2016
Nonvolatile semiconductor memory device
TOSHIBA KK1 citations52
US9219229B2Dec 22, 2015
Resistance change device and memory cell array
TOSHIBA KK0 citations52
US9202845B2Dec 1, 2015
Memory device having a stacked variable resistance layer
TOSHIBA KK1 citations52
US9190454B2Nov 17, 2015
Memory device
TOSHIBA KK1 citations52
US9147469B2Sep 29, 2015
Nonvolatile semiconductor memory device including variable resistance element
TOSHIBA KK0 citations52
US9024287B2May 5, 2015
Memory device
TOSHIBA KK0 citations52
US8987807B2Mar 24, 2015
Nonvolatile semiconductor memory device and method of manufacturing the same
TOSHIBA KK1 citations52
US8981461B2Mar 17, 2015
Nonvolatile semiconductor memory device and method of manufacturing the same
TOSHIBA KK1 citations52
US8975611B2Mar 10, 2015
Nonvolatile variable resistance device having a semiconductor layer with higher percentage of unterminated semiconductor element than adjacent layers
TOSHIBA KK0 citations52
US8971106B2Mar 3, 2015
Nonvolatile semiconductor memory device including variable resistance element
TOSHIBA KK0 citations52
US7956405B2Jun 7, 2011
Semiconductor storage element and manufacturing method thereof
TOSHIBA KK1 citations52
TOSHIBA MEMORY CORP
15 patentsUS10916654B2Feb 9, 2021
Semiconductor memory device
TOSHIBA MEMORY CORP9 citations86
US10784312B1Sep 22, 2020
Semiconductor memory device
TOSHIBA MEMORY CORP11 citations84
US10096619B2Oct 9, 2018
Semiconductor device, manufacturing method for semiconductor device, and ferroelectric layer
TOSHIBA MEMORY CORP14 citations84
US9947685B2Apr 17, 2018
3D non-volatile memory array utilizing metal ion source
TOSHIBA MEMORY CORP12 citations84
US9779797B2Oct 3, 2017
Non-volatile memory device
TOSHIBA MEMORY CORP13 citations84
US9761798B2Sep 12, 2017
Storage device
TOSHIBA MEMORY CORP10 citations84
US10038032B2Jul 31, 2018
Semiconductor memory device, semiconductor device, and method for manufacturing the same
TOSHIBA MEMORY CORP2 citations73
US9997569B2Jun 12, 2018
Memory device
TOSHIBA MEMORY CORP5 citations73
US9954167B2Apr 24, 2018
Memory device including a layer including hafnium oxide and method for manufacturing the same
TOSHIBA MEMORY CORP5 citations73
US9805927B2Oct 31, 2017
Nonvolatile semiconductor memory device
TOSHIBA MEMORY CORP2 citations73
US10833103B2Nov 10, 2020
Semiconductor memory device
TOSHIBA MEMORY CORP3 citations72
US10249818B1Apr 2, 2019
Memory element
TOSHIBA MEMORY CORP2 citations71
US9928908B2Mar 27, 2018
Resistance-change memory operating with read pulses of opposite polarity
TOSHIBA MEMORY CORP1 citations63
US9882127B2Jan 30, 2018
Nonvolatile resistance change element
TOSHIBA MEMORY CORP0 citations52
US9865809B2Jan 9, 2018
Nonvolatile resistance change element
TOSHIBA MEMORY CORP1 citations52
KUSAI HARUKA
2 patentsSAKUMA KIWAMU
1 patentMATSUSHITA DAISUKE
1 patentINO TSUNEHIRO
1 patentHIRANO IZUMI
1 patentYAMAUCHI TAKASHI
1 patentFUJII SHOSUKE
1 patentMITANI YUICHIRO
1 patentKIOXIA CORP
1 patentShowing the top 50 of 59 patents by PatentIndex Score.