Inventor
AGGARWAL SANJEEV
US125 patents
⚠️ This page may combine multiple inventors who share the name “AGGARWAL SANJEEV”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
EVERSPIN TECHNOLOGIES INC
29 patentsUS8747680B1Jun 10, 2014
Method of manufacturing a magnetoresistive-based device
EVERSPIN TECHNOLOGIES INC275 citations99
US9166155B2Oct 20, 2015
Method of manufacturing a magnetoresistive-based device
EVERSPIN TECHNOLOGIES INC61 citations98
US9093640B2Jul 28, 2015
Method for manufacturing and magnetic devices having double tunnel barriers
EVERSPIN TECHNOLOGIES INC32 citations97
US10461251B2Oct 29, 2019
Method of manufacturing integrated circuit using encapsulation during an etch process
EVERSPIN TECHNOLOGIES INC14 citations94
US9722174B1Aug 1, 2017
Low dielectric constant interlayer dielectrics in spin torque magnetoresistive devices
EVERSPIN TECHNOLOGIES INC26 citations94
US9548442B2Jan 17, 2017
Magnetoresistive structure having two dielectric layers, and method of manufacturing same
EVERSPIN TECHNOLOGIES INC21 citations94
US9269894B2Feb 23, 2016
Isolation of magnetic layers during etch in a magnetoresistive device
EVERSPIN TECHNOLOGIES INC36 citations94
US9711566B1Jul 18, 2017
Magnetoresistive device design and process integration with surrounding circuitry
EVERSPIN TECHNOLOGIES INC14 citations93
US9412786B1Aug 9, 2016
Magnetoresistive device design and process integration with surrounding circuitry
EVERSPIN TECHNOLOGIES INC17 citations93
US9306157B2Apr 5, 2016
Method of manufacturing a magnetoresistive-based device
EVERSPIN TECHNOLOGIES INC13 citations93
US9793470B2Oct 17, 2017
Magnetoresistive stack/structure and method of manufacturing same
EVERSPIN TECHNOLOGIES INC10 citations92
US9269891B2Feb 23, 2016
Process integration of a single chip three axis magnetic field sensor
EVERSPIN TECHNOLOGIES INC9 citations92
US11024799B2Jun 1, 2021
Methods of manufacturing a magnetic field sensor
EVERSPIN TECHNOLOGIES INC3 citations84
US10700268B2Jun 30, 2020
Method of fabricating magnetoresistive bit from magnetoresistive stack
EVERSPIN TECHNOLOGIES INC7 citations84
US10608172B2Mar 31, 2020
Magnetoresistive structure having two dielectric layers, and method of manufacturing same
EVERSPIN TECHNOLOGIES INC3 citations84
US10483320B2Nov 19, 2019
Magnetoresistive stack with seed region and method of manufacturing the same
EVERSPIN TECHNOLOGIES INC6 citations84
US10461250B2Oct 29, 2019
Magnetoresistive stack/structure and method of manufacturing same
EVERSPIN TECHNOLOGIES INC5 citations84
US10396279B2Aug 27, 2019
Magnetoresistive device and method of manufacturing same
EVERSPIN TECHNOLOGIES INC6 citations84
US10276789B2Apr 30, 2019
Methods of manufacturing a magnetic field sensor
EVERSPIN TECHNOLOGIES INC4 citations84
US10230046B2Mar 12, 2019
Magnetoresistive structure having two dielectric layers, and method of manufacturing same
EVERSPIN TECHNOLOGIES INC3 citations84
US10103197B1Oct 16, 2018
Magnetoresistive device design and process integration with surrounding circuitry
EVERSPIN TECHNOLOGIES INC6 citations84
US10079339B2Sep 18, 2018
Magnetoresistive stack/structure and method of manufacturing same
EVERSPIN TECHNOLOGIES INC5 citations84
US10062839B2Aug 28, 2018
Magnetoresistive device and method of manufacturing same
EVERSPIN TECHNOLOGIES INC4 citations84
US9893274B2Feb 13, 2018
Methods of manufacturing a magnetic field sensor
EVERSPIN TECHNOLOGIES INC6 citations84
US9893275B2Feb 13, 2018
Magnetoresistive structure having two dielectric layers, and method of manufacturing same
EVERSPIN TECHNOLOGIES INC5 citations84
US9865804B2Jan 9, 2018
Magnetoresistive device and method of manufacturing same
EVERSPIN TECHNOLOGIES INC7 citations84
US9837603B1Dec 5, 2017
Post-etch encapsulation for a magnetoresistive device
EVERSPIN TECHNOLOGIES INC15 citations84
US9698341B2Jul 4, 2017
Magnetoresistive device and method of manufacturing same
EVERSPIN TECHNOLOGIES INC8 citations84
US9553261B2Jan 24, 2017
Methods of manufacturing a magnetic field sensor
EVERSPIN TECHNOLOGIES INC6 citations84
TEXAS INSTRUMENTS INC
13 patentsUS7001821B2Feb 21, 2006
Method of forming and using a hardmask for forming ferroelectric capacitors in a semiconductor device
TEXAS INSTRUMENTS INC63 citations98
US6528386B1Mar 4, 2003
Protection of tungsten alignment mark for FeRAM processing
TEXAS INSTRUMENTS INC84 citations98
US6500678B1Dec 31, 2002
Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing
TEXAS INSTRUMENTS INC101 citations98
US7514734B2Apr 7, 2009
Hardmask for forming ferroelectric capacitors in a semiconductor device and methods for fabricating the same
TEXAS INSTRUMENTS INC42 citations92
US6828161B2Dec 7, 2004
Method of forming an FeRAM having a multi-layer hard mask and patterning thereof
TEXAS INSTRUMENTS INC25 citations92
US6635498B2Oct 21, 2003
Method of patterning a FeRAM capacitor with a sidewall during bottom electrode etch
TEXAS INSTRUMENTS INC48 citations92
US6635497B2Oct 21, 2003
Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing
TEXAS INSTRUMENTS INC32 citations92
US6596547B2Jul 22, 2003
Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing
TEXAS INSTRUMENTS INC23 citations92
US6528328B1Mar 4, 2003
Methods of preventing reduction of irox during PZT formation by metalorganic chemical vapor deposition or other processing
TEXAS INSTRUMENTS INC35 citations92
US6876021B2Apr 5, 2005
Use of amorphous aluminum oxide on a capacitor sidewall for use as a hydrogen barrier
TEXAS INSTRUMENTS INC43 citations91
US6576482B1Jun 10, 2003
One step deposition process for the top electrode and hardmask in a ferroelectric memory cell
TEXAS INSTRUMENTS INC43 citations90
US6984857B2Jan 10, 2006
Hydrogen barrier for protecting ferroelectric capacitors in a semiconductor device and methods for fabricating the same
TEXAS INSTRUMENTS INC37 citations89
US6773930B2Aug 10, 2004
Method of forming an FeRAM capacitor having a bottom electrode diffusion barrier
TEXAS INSTRUMENTS INC32 citations89
TELCORDIA TECH INC
4 patentsUS6194754B1Feb 27, 2001
Amorphous barrier layer in a ferroelectric memory cell
TELCORDIA TECH INC66 citations96
US6115281ASep 5, 2000
Methods and structures to cure the effects of hydrogen annealing on ferroelectric capacitors
TELCORDIA TECH INC107 citations96
US6274388B1Aug 14, 2001
Annealing of a crystalline perovskite ferroelectric cell
TELCORDIA TECH INC79 citations95
US6265230B1Jul 24, 2001
Methods to cure the effects of hydrogen annealing on ferroelectric capacitors
TELCORDIA TECH INC42 citations91
UNIV MARYLAND
1 patentMATHER PHILLIP G
1 patentWHIG RENU
1 patentAGGARWAL SANJEEV
1 patentShowing the top 50 of 125 patents by PatentIndex Score.