Inventor
MARUYAMA HOTAKA
JP42 patents
⚠️ This page may combine multiple inventors who share the name “MARUYAMA HOTAKA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEMICONDUCTOR ENERGY LAB
30 patentsUS8377762B2Feb 19, 2013
Light-emitting device and manufacturing method thereof
SEMICONDUCTOR ENERGY LAB79 citations98
US9666820B2May 30, 2017
Light-emitting device and manufacturing method thereof
SEMICONDUCTOR ENERGY LAB24 citations94
US9466756B2Oct 11, 2016
Semiconductor device and manufacturing method thereof
SEMICONDUCTOR ENERGY LAB24 citations94
US9391095B2Jul 12, 2016
Semiconductor device and manufacturing method thereof
SEMICONDUCTOR ENERGY LAB25 citations94
US10374184B2Aug 6, 2019
Light-emitting device and manufacturing method thereof
SEMICONDUCTOR ENERGY LAB12 citations93
US9837442B2Dec 5, 2017
Semiconductor device comprising a plurality of N-channel transistors wherein the oxide semiconductor layer comprises a portion being in an oxygen-excess state
SEMICONDUCTOR ENERGY LAB12 citations93
US9583509B2Feb 28, 2017
Semiconductor device wherein an oxide semiconductor layer has a degree of crystallization of 80% or more
SEMICONDUCTOR ENERGY LAB19 citations93
US9431465B2Aug 30, 2016
Light-emitting device and method for manufacturing the same
SEMICONDUCTOR ENERGY LAB15 citations93
US9153602B2Oct 6, 2015
Semiconductor device wherein an oxide semiconductor layer comprises a crystal and has a degree of crystallization of 80% or more
SEMICONDUCTOR ENERGY LAB26 citations93
US8957411B2Feb 17, 2015
Light-emitting device and method for manufacturing the same
SEMICONDUCTOR ENERGY LAB20 citations93
US8885115B2Nov 11, 2014
Semiconductor device wherein each of a first oxide semiconductor layer and a second oxide semiconductor layer includes a portion that is in an oxygen-excess state and is in contact with an insulating layer
SEMICONDUCTOR ENERGY LAB23 citations93
US8003449B2Aug 23, 2011
Method of manufacturing a semiconductor device having a reverse staggered thin film transistor
SEMICONDUCTOR ENERGY LAB27 citations93
US11171298B2Nov 9, 2021
Light-emitting device and manufacturing method thereof
SEMICONDUCTOR ENERGY LAB4 citations84
US11024747B2Jun 1, 2021
Light-emitting device and method for manufacturing the same
SEMICONDUCTOR ENERGY LAB8 citations84
US10672915B2Jun 2, 2020
Light-emitting device and method for manufacturing the same
SEMICONDUCTOR ENERGY LAB7 citations84
US10243005B2Mar 26, 2019
Semiconductor device and manufacturing method thereof
SEMICONDUCTOR ENERGY LAB12 citations84
US9537012B2Jan 3, 2017
Semiconductor device with oxide semiconductor layer
SEMICONDUCTOR ENERGY LAB9 citations84
US9130041B2Sep 8, 2015
Semiconductor device and method for manufacturing the same
SEMICONDUCTOR ENERGY LAB9 citations84
US7696024B2Apr 13, 2010
Semiconductor device and manufacturing method thereof
SEMICONDUCTOR ENERGY LAB11 citations84
US11997859B2May 28, 2024
Light-emitting device and manufacturing method thereof
SEMICONDUCTOR ENERGY LAB1 citations73
US11626521B2Apr 11, 2023
Light-emitting device and method for manufacturing the same
SEMICONDUCTOR ENERGY LAB1 citations73
US11469387B2Oct 11, 2022
Light-emitting device and manufacturing method thereof
SEMICONDUCTOR ENERGY LAB1 citations73
US10297679B2May 21, 2019
Method for manufacturing semiconductor device
SEMICONDUCTOR ENERGY LAB2 citations73
US9887276B2Feb 6, 2018
Method for manufacturing semiconductor device having oxide semiconductor
SEMICONDUCTOR ENERGY LAB2 citations73
US12057511B2Aug 6, 2024
Light-emitting device and method for manufacturing the same
SEMICONDUCTOR ENERGY LAB0 citations63
US9431427B2Aug 30, 2016
Semiconductor device comprising oxide semiconductor layer
SEMICONDUCTOR ENERGY LAB2 citations63
US7759629B2Jul 20, 2010
Method for manufacturing a semiconductor device
SEMICONDUCTOR ENERGY LAB3 citations63
US8358144B2Jan 22, 2013
Method for manufacturing semiconductor device, semiconductor inspection device, and program including color imaging of metal silicide
SEMICONDUCTOR ENERGY LAB2 citations59
US7842520B2Nov 30, 2010
Method for manufacturing semiconductor device, semiconductor inspection device, and program including color imaging of metal silicide and calculations thereof
SEMICONDUCTOR ENERGY LAB2 citations59
US8035077B2Oct 11, 2011
Method for manufacturing a semiconductor device
SEMICONDUCTOR ENERGY LAB0 citations52
YAMAZAKI SHUNPEI
5 patentsUS8654272B2Feb 18, 2014
Semiconductor device wherein each of a first oxide semiconductor layer and a second oxide semiconductor layer includes a portion that is in an oxygen-excess state which is in contact with a second insulatng layer
YAMAZAKI SHUNPEI37 citations98
US8502220B2Aug 6, 2013
Semiconductor device and manufacturing method thereof
YAMAZAKI SHUNPEI45 citations98
US8502225B2Aug 6, 2013
Light-emitting device and method for manufacturing the same
YAMAZAKI SHUNPEI48 citations98
US8664036B2Mar 4, 2014
Semiconductor device and manufacturing method thereof
YAMAZAKI SHUNPEI35 citations94
US8541780B2Sep 24, 2013
Semiconductor device having oxide semiconductor layer
YAMAZAKI SHUNPEI14 citations93
OIKAWA YOSHIAKI
3 patentsUS8637347B2Jan 28, 2014
Method for manufacturing semiconductor device
OIKAWA YOSHIAKI28 citations92
US8174021B2May 8, 2012
Semiconductor device and method of manufacturing the semiconductor device
OIKAWA YOSHIAKI17 citations92
US8877569B2Nov 4, 2014
Method of manufacturing thin film transistor with oxide semiconductor using sputtering method
OIKAWA YOSHIAKI2 citations63