Inventor

XU HUIWEN

CN48 patents

⚠️ This page may combine multiple inventors who share the name “XU HUIWEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

XU HUIWEN

XU HUIWEN

Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k&lt;2.5) dielectrics

Carbon-based interface layer for a memory device and methods of forming the same

Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same

Methods for increased array feature density

Integration methods for carbon films in two- and three-dimensional memories formed therefrom

Memory cell that includes a carbon-based memory element and methods forming the same

Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same

Memory cell that includes a carbon-based memory element and methods of forming the same

Modulation of resistivity in carbon-based read-writeable materials

Methods and apparatus for increasing memory density using diode layer sharing

ENRAYTEK OPTOELECTRONICS CO

LED chip

LED chip

LED chip

Light emitting diode chip

Method for manufacturing high voltage LED flip chip

High voltage LED flip chip

High-voltage flip LED chip and manufacturing method thereof

GaN-based LED epitaxial structure and preparation method thereof

SANDISK TECHNOLOGIES LLC

Reduced verify scheme during programming based on spacing between verify levels

Non-volatile memory with erase depth detection and adaptive adjustment to programming

Smart early detection of wordline-memory hole defects with wordline-dependent dual sensing during erase verify

Variable programming voltage step size control during programming of a memory device

Multi-pass programming operation sequence in a memory device

Dynamic sense node voltage to compensate for variances when sensing threshold voltages of memory cells

Techniques for reading memory cells in a memory device during a multi-pass programming operation

SANDISK 3D LLC

Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same

Methods for increased array feature density

Method of making a two-terminal non-volatile memory pillar device with rounded corner

Methods and apparatus for increasing memory density using diode layer sharing

Methods for increased array feature density

APPLIED MATERIALS INC

In-situ oxide capping after CVD low k deposition

Methods to obtain low k dielectric barrier with superior etch resistivity

Method to mitigate impact of UV and E-beam exposure on semiconductor device film properties by use of a bilayer film

JADE BIRD DISPLAY SHANGHAI LTD

Systems and methods for multi-color LED pixel unit with vertical light emission

Systems and methods for multi-color LED pixel unit with horizontal light emission

Systems and methods for multi-color LED pixel unit

KREUPL FRANZ

Memory cell with silicon-containing carbon switching layer and methods for forming the same

Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same

HONG KONG BEIDA JADE BIRD DISPLAY LTD

Semiconductor apparatus and method of manufacturing the same

Semiconductor apparatus and method of manufacturing the same

SCHRICKER APRIL D

Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom

HOU KUN

Non-volatile memory cell containing an in-cell resistor

PING ER-XUAN

Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same

HANGZHOU WOKASOLAR TECH CO LTD

Louver roller system with cam pin turning mechanism

SANDISK TECHNOLOGIES INC

Adaptive erase scheme for a memory device

ZHEJIANG DAFENG IND CO LTD

Kinetic sculpture and intelligent control system

CHEN XIYING

Electrode diffusions in two-terminal non-volatile memory devices

SUN YOUHONG

Forced cooling circulation system for drilling mud

Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics