Inventor

SHROTRI KUNAL

US48 patents

⚠️ This page may combine multiple inventors who share the name “SHROTRI KUNAL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHROTRI KUNAL

MICRON TECHNOLOGY INC

Methods of forming an array of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stack

Methods of forming semiconductor structures having stair step structures

Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials

Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials

Transistors and arrays of elevationally-extending strings of memory cells

Methods of forming a channel region of a transistor and methods used in forming a memory array

Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon

Integrated structures and methods of forming integrated structures

Semiconductor devices including a stair step structure, and related methods

Microelectronic devices including stair step structures, and related electronic devices and methods

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

Integrated structures and methods of forming integrated structures

Stair step structures including insulative materials, and related devices

Transistors and arrays of elevationally-extending strings of memory cells

Methods of forming electronic devices using materials removable at different temperatures

Microelectronic devices including stair step structures, and related electronic devices and methods

Integrated assemblies and methods of forming integrated assemblies

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon

Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cells

Methods of forming electronic devices using materials removable at different temperatures

Integrated assemblies and methods of forming integrated assemblies

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

Integrated structures and methods of forming integrated structures

Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon

Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cells

Methods of forming a channel region of a transistor and methods used in forming a memory array

Integrated assemblies having rugged material fill, and methods of forming integrated assemblies

Semiconductor device structures with liners

Methods of forming semiconductor device structures, memory cells, and arrays

Integrated assemblies and methods of forming integrated assemblies

Integrated assemblies and methods of forming integrated assemblies

Memory arrays and methods used in forming a memory array comprising strings of memory cells

Memory arrays and methods used in forming a memory array comprising strings of memory cells

Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cells

Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon

Microelectronic devices including tiered stacks including conductive structures isolated by slot structures, and related electronic systems and methods

Integrated structures including material containing silicon, nitrogen, and at least one of carbon, oxygen, boron and phosphorus

Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials

Arrays of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stacks

Integrated structures and methods of forming integrated structures

Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials

INTEL CORP

Flash memory cells, components, and methods

Polysilicon doping controlled 3D NAND etching

LODESTAR LICENSING GROUP LLC

Integrated assemblies and methods of forming integrated assemblies

SRIVASTAVA SHIVANI

DRAM cells and methods of forming silicon dioxide