Inventor
CHUNG JU-HYUK
KR2 patents
Patents
2 patentsUS6596581B2Jul 22, 2003
Method for manufacturing a semiconductor device having a metal-insulator-metal capacitor and a damascene wiring layer structure
SAMSUNG ELECTRONICS CO LTD26 citations89
US6849536B2Feb 1, 2005
Inter-metal dielectric patterns and method of forming the same
SAMSUNG ELECTRONICS CO LTD12 citations82