Inventor
LAN WEN-TING
TW29 patents
Patents
29 patentsUS11289606B2Mar 29, 2022
Capacitance reduction for back-side power rail device
TAIWAN SEMICONDUCTOR MFG CO LTD15 citations94
US10833003B1Nov 10, 2020
Integrated circuits with backside power rails
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations94
US11264327B2Mar 1, 2022
Backside power rail structure and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations86
US11444170B1Sep 13, 2022
Semiconductor device with backside self-aligned power rail and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11961915B2Apr 16, 2024
Capacitance reduction for back-side power rail device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11916125B2Feb 27, 2024
Semiconductor device with backside self-aligned power rail and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11842965B2Dec 12, 2023
Backside power rail structure and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11742280B2Aug 29, 2023
Integrated circuits with backside power rails
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11387181B2Jul 12, 2022
Integrated circuits with backside power rails
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10157751B1Dec 18, 2018
Method for manufacturing semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9755033B2Sep 5, 2017
Semiconductor device and method of forming vertical structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12057477B2Aug 6, 2024
Semiconductor structure with hybrid nanostructures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11257903B2Feb 22, 2022
Method for manufacturing semiconductor structure with hybrid nanostructures
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12402405B2Aug 26, 2025
Integration of multiple fin stuctures on a single substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12396246B2Aug 19, 2025
Semiconductor integrated circuit including gate-all-around FETs with nanosheet channels and Fin-like FETs
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12317542B2May 27, 2025
Semiconductor device with backside self-aligned power rail and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12183678B2Dec 31, 2024
Backside power rail structure and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12062705B2Aug 13, 2024
Semiconductor device and method of forming vertical structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12057385B2Aug 6, 2024
Integrated circuits with backside power rails
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12040329B2Jul 16, 2024
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11973079B2Apr 30, 2024
Integration of multiple fin structures on a single substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11664378B2May 30, 2023
Semiconductor device structure and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11342325B2May 24, 2022
Integration of multiple fin structures on a single substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11302580B2Apr 12, 2022
Nanosheet thickness
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12575464B2Mar 10, 2026
Method of forming wafer-to-wafer bonding structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12568775B2Mar 3, 2026
Method for forming a memory device at a backside of a wafer substrate, and memory cell including a memory device at a backside of a wafer substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12482785B2Nov 25, 2025
Trim free wafer bonding methods and devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10854723B2Dec 1, 2020
Semiconductor device and method of forming vertical structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10755943B2Aug 25, 2020
Method for manufacturing semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52