Inventor
KANG SANG HEE
KR37 patents
⚠️ This page may combine multiple inventors who share the name “KANG SANG HEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HYNIX SEMICONDUCTOR INC
23 patentsUS7123536B2Oct 17, 2006
Voltage generation control circuit in semiconductor memory device, circuit using the same and method thereof
HYNIX SEMICONDUCTOR INC22 citations92
US7002862B2Feb 21, 2006
Semiconductor memory device with sense amplifier driver having multiplied output lines
HYNIX SEMICONDUCTOR INC27 citations92
US6731560B2May 4, 2004
Refresh apparatus for semiconductor memory device, and refresh method thereof
HYNIX SEMICONDUCTOR INC31 citations92
US7450455B2Nov 11, 2008
Semiconductor memory device and driving method thereof
HYNIX SEMICONDUCTOR INC11 citations84
US7379357B2May 27, 2008
Semiconductor memory device having advanced repair circuit
HYNIX SEMICONDUCTOR INC13 citations84
US7362164B2Apr 22, 2008
Semiconductor integrated circuit and method of controlling internal voltage of the same
HYNIX SEMICONDUCTOR INC12 citations84
US7227794B2Jun 5, 2007
Internal voltage generation control circuit and internal voltage generation circuit using the same
HYNIX SEMICONDUCTOR INC14 citations84
US7583134B2Sep 1, 2009
Semiconductor integrated circuit and method of controlling internal voltage of the same
HYNIX SEMICONDUCTOR INC5 citations74
US7102938B2Sep 5, 2006
Internal voltage generation control circuit and internal voltage generation circuit using the same
HYNIX SEMICONDUCTOR INC7 citations74
US7099209B2Aug 29, 2006
Semiconductor memory device having repair circuit
HYNIX SEMICONDUCTOR INC10 citations74
US6747909B2Jun 8, 2004
Decoding apparatus for semiconductor memory device, and enable method therefore
HYNIX SEMICONDUCTOR INC9 citations74
US7602659B2Oct 13, 2009
Memory device having shared fail-repairing circuit capable of repairing row or column fails in memory cell arrays of memory banks
HYNIX SEMICONDUCTOR INC6 citations63
US7471578B2Dec 30, 2008
Internal voltage generation control circuit and internal voltage generation circuit using the same
HYNIX SEMICONDUCTOR INC2 citations63
US7257037B2Aug 14, 2007
Redundancy circuit in semiconductor memory device
HYNIX SEMICONDUCTOR INC4 citations63
US6989703B2Jan 24, 2006
Shared delay circuit of a semiconductor device
HYNIX SEMICONDUCTOR INC6 citations63
US6879197B2Apr 12, 2005
Apparatus for generating driving voltage for sense amplifier in a memory device
HYNIX SEMICONDUCTOR INC6 citations63
US6771555B2Aug 3, 2004
Row access information transfer device using internal wiring of a memory cell array
HYNIX SEMICONDUCTOR INC6 citations63
US7184331B2Feb 27, 2007
Redundancy fuse control circuit and semiconductor memory device having the same and redundancy process method
HYNIX SEMICONDUCTOR INC5 citations62
US7733739B2Jun 8, 2010
Synchronous semiconductor memory device
HYNIX SEMICONDUCTOR INC0 citations52
US7602660B2Oct 13, 2009
Redundancy circuit semiconductor memory device
HYNIX SEMICONDUCTOR INC0 citations52
US7345949B2Mar 18, 2008
Synchronous semiconductor memory device
HYNIX SEMICONDUCTOR INC0 citations52
US7280418B2Oct 9, 2007
Internal voltage generation control circuit and internal voltage generation circuit using the same
HYNIX SEMICONDUCTOR INC1 citations52
US7379378B2May 27, 2008
Over driving control signal generator in semiconductor memory device
HYNIX SEMICONDUCTOR INC0 citations51
SAMSUNG ELECTRONICS CO LTD
3 patentsUS9899918B2Feb 20, 2018
DC/DC converter, driving method thereof, and power supply using the same
SAMSUNG ELECTRONICS CO LTD14 citations82
US10430701B2Oct 1, 2019
Magnetic secure transmission device, electronic device and mobile system including the same
SAMSUNG ELECTRONICS CO LTD4 citations71
US11170360B2Nov 9, 2021
Magnetic secure transmission (MST) device, MST system and controller including the same
SAMSUNG ELECTRONICS CO LTD0 citations50
UNIV MYONGJI
3 patentsUS7127364B2Oct 24, 2006
Method of compensating for distorted secondary current of current transformer
UNIV MYONGJI7 citations69
US7103485B2Sep 5, 2006
Method for compensating secondary current of current transformers
UNIV MYONGJI5 citations56
US6597160B2Jul 22, 2003
Method for measuring fundamental frequency component of fault current or voltage signal
UNIV MYONGJI0 citations45