P

Inventor

KOH GWANHYEOB

KR33 patents
⚠️ This page may combine multiple inventors who share the name “KOH GWANHYEOB”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

26 patents
US10438998B2Oct 8, 2019

Integrated-circuit devices including different types of memory cells and methods of forming the same

SAMSUNG ELECTRONICS CO LTD10 citations83
US10395706B2Aug 27, 2019

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD5 citations83
US10373653B2Aug 6, 2019

Semiconductor device having first memory section and second memory section stacked vertically on each other

SAMSUNG ELECTRONICS CO LTD8 citations83
US11211425B2Dec 28, 2021

Magnetic memory devices

SAMSUNG ELECTRONICS CO LTD2 citations73
US10897006B2Jan 19, 2021

Magnetic memory device and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US10861902B2Dec 8, 2020

Semiconductor device having magnetic tunnel junction pattern

SAMSUNG ELECTRONICS CO LTD4 citations72
US10410722B2Sep 10, 2019

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD2 citations72
US10388629B2Aug 20, 2019

Semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations71
US10418548B2Sep 17, 2019

Magnetic memory device

SAMSUNG ELECTRONICS CO LTD2 citations70
US10032981B2Jul 24, 2018

Magnetic memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations70
US11665910B2May 30, 2023

Magnetic memory devices

SAMSUNG ELECTRONICS CO LTD0 citations62
US11659719B2May 23, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11361798B2Jun 14, 2022

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11121175B2Sep 14, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US10693055B2Jun 23, 2020

Magnetic memory devices

SAMSUNG ELECTRONICS CO LTD1 citations62
US10431276B2Oct 1, 2019

Semiconductor devices including reversible and one-time programmable magnetic tunnel junctions

SAMSUNG ELECTRONICS CO LTD1 citations62
US11557631B2Jan 17, 2023

Semiconductor device having first memory section and second memory section

SAMSUNG ELECTRONICS CO LTD0 citations61
US12439830B2Oct 7, 2025

Magnetic memory device including magnetic tunnel junction patterns with non-uniform widths

SAMSUNG ELECTRONICS CO LTD0 citations59
US12058941B2Aug 6, 2024

Magnetic memory device

SAMSUNG ELECTRONICS CO LTD0 citations59
US12537529B2Jan 27, 2026

Chaotic computer including spin soliton, operation method of chaotic computer, and chaotic computing method using spin soliton

SAMSUNG ELECTRONICS CO LTD0 citations57
US11437432B2Sep 6, 2022

Embedded device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US10720211B2Jul 21, 2020

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations51
US10580469B2Mar 3, 2020

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations51
US10103323B2Oct 16, 2018

Method for forming a hard mask pattern and method for manufacturing a semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US10515678B2Dec 24, 2019

Magnetic memory devices

SAMSUNG ELECTRONICS CO LTD0 citations49
US10446560B2Oct 15, 2019

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations41

SEO BOYOUNG

2 patents

SUH KISEOK

2 patents

LEE YONGKYU

1 patent

CHUNG YONG-SEOK

1 patent

SON MYOUNGSU

1 patent