Inventor
KOH GWANHYEOB
KR33 patents
⚠️ This page may combine multiple inventors who share the name “KOH GWANHYEOB”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
26 patentsUS10438998B2Oct 8, 2019
Integrated-circuit devices including different types of memory cells and methods of forming the same
SAMSUNG ELECTRONICS CO LTD10 citations83
US10395706B2Aug 27, 2019
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD5 citations83
US10373653B2Aug 6, 2019
Semiconductor device having first memory section and second memory section stacked vertically on each other
SAMSUNG ELECTRONICS CO LTD8 citations83
US11211425B2Dec 28, 2021
Magnetic memory devices
SAMSUNG ELECTRONICS CO LTD2 citations73
US10897006B2Jan 19, 2021
Magnetic memory device and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10861902B2Dec 8, 2020
Semiconductor device having magnetic tunnel junction pattern
SAMSUNG ELECTRONICS CO LTD4 citations72
US10410722B2Sep 10, 2019
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD2 citations72
US10388629B2Aug 20, 2019
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations71
US10418548B2Sep 17, 2019
Magnetic memory device
SAMSUNG ELECTRONICS CO LTD2 citations70
US10032981B2Jul 24, 2018
Magnetic memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations70
US11665910B2May 30, 2023
Magnetic memory devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11659719B2May 23, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11361798B2Jun 14, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11121175B2Sep 14, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US10693055B2Jun 23, 2020
Magnetic memory devices
SAMSUNG ELECTRONICS CO LTD1 citations62
US10431276B2Oct 1, 2019
Semiconductor devices including reversible and one-time programmable magnetic tunnel junctions
SAMSUNG ELECTRONICS CO LTD1 citations62
US11557631B2Jan 17, 2023
Semiconductor device having first memory section and second memory section
SAMSUNG ELECTRONICS CO LTD0 citations61
US12439830B2Oct 7, 2025
Magnetic memory device including magnetic tunnel junction patterns with non-uniform widths
SAMSUNG ELECTRONICS CO LTD0 citations59
US12058941B2Aug 6, 2024
Magnetic memory device
SAMSUNG ELECTRONICS CO LTD0 citations59
US12537529B2Jan 27, 2026
Chaotic computer including spin soliton, operation method of chaotic computer, and chaotic computing method using spin soliton
SAMSUNG ELECTRONICS CO LTD0 citations57
US11437432B2Sep 6, 2022
Embedded device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US10720211B2Jul 21, 2020
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations51
US10580469B2Mar 3, 2020
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations51
US10103323B2Oct 16, 2018
Method for forming a hard mask pattern and method for manufacturing a semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US10515678B2Dec 24, 2019
Magnetic memory devices
SAMSUNG ELECTRONICS CO LTD0 citations49
US10446560B2Oct 15, 2019
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations41