Inventor
WINTER CHARLES H
US37 patents
⚠️ This page may combine multiple inventors who share the name “WINTER CHARLES H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNIV WAYNE STATE
22 patentsUS5425966AJun 20, 1995
Process for coating with single source precursors
UNIV WAYNE STATE65 citations95
US6887297B2May 3, 2005
Copper nanocrystals and methods of producing same
UNIV WAYNE STATE83 citations94
US5591483AJan 7, 1997
Process for the preparation of metal nitride coatings from single source precursors
UNIV WAYNE STATE25 citations92
US5409735AApr 25, 1995
Chemical vapor deposition of metal pnictogenide films using single source precursors
UNIV WAYNE STATE20 citations90
US6897151B2May 24, 2005
Methods of filling a feature on a substrate with copper nanocrystals
UNIV WAYNE STATE24 citations89
US9540730B2Jan 10, 2017
Deposition of metal films based upon complementary reactions
UNIV WAYNE STATE7 citations84
US7901656B2Mar 8, 2011
Metal oxide-containing nanoparticles
UNIV WAYNE STATE8 citations82
US5900498AMay 4, 1999
Process for the preparation of metal nitride coatings from single source precursors and precursors suitable therefor
UNIV WAYNE STATE12 citations73
US5298295AMar 29, 1994
Chemical vapor deposition of metal chalcogenide films
UNIV WAYNE STATE7 citations72
US5112650AMay 12, 1992
Chemical vapor deposition of metal chalcogenide films
UNIV WAYNE STATE10 citations72
US9982344B2May 29, 2018
Thermally stable volatile precursors
UNIV WAYNE STATE3 citations70
US9822446B2Nov 21, 2017
Thermally stable volatile precursors
UNIV WAYNE STATE3 citations70
US9157149B2Oct 13, 2015
Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate
UNIV WAYNE STATE6 citations69
US5892083AApr 6, 1999
Organometallic source compounds for chemical vapor deposition
UNIV WAYNE STATE11 citations66
US9249505B2Feb 2, 2016
Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate
UNIV WAYNE STATE2 citations58
US10982336B2Apr 20, 2021
Method for etching a metal surface
UNIV WAYNE STATE0 citations52
US10711346B2Jul 14, 2020
6-membered cyclic dienes as strongly reducing precursors for the growth of element films by vapor phase deposition
UNIV WAYNE STATE0 citations52
US9758866B2Sep 12, 2017
Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films
UNIV WAYNE STATE0 citations51
US9714464B2Jul 25, 2017
Precursors for atomic layer deposition
UNIV WAYNE STATE0 citations51
US8907115B2Dec 9, 2014
Synthesis and characterization of first row transition metal complexes containing α-keto hydrazonate ligands as potential precursors for use in metal film deposition
UNIV WAYNE STATE1 citations51
US10533023B2Jan 14, 2020
Bis(trimethylsilyl) six-membered ring systems and related compounds as reducing agents for forming layers on a substrate
UNIV WAYNE STATE0 citations48
US11015241B2May 25, 2021
Reaction of diazadiene complexes with amines
UNIV WAYNE STATE0 citations41
APPLIED MATERIALS INC
6 patentsUS12545998B2Feb 10, 2026
Deposition of rhenium-containing thin films
APPLIED MATERIALS INC0 citations59
US11532474B2Dec 20, 2022
Deposition of rhenium-containing thin films
APPLIED MATERIALS INC0 citations59
US12571100B2Mar 10, 2026
Atomic layer deposition of molybdenum silicide thin films
APPLIED MATERIALS INC0 citations57
US12435411B2Oct 7, 2025
Metal organonitrile precursors for thin film deposition
APPLIED MATERIALS INC0 citations57
US11408068B2Aug 9, 2022
Deposition of tellurium-containing thin films
APPLIED MATERIALS INC0 citations57
US12084464B2Sep 10, 2024
Rhenium complexes and methods of use
APPLIED MATERIALS INC0 citations48