Inventor
LIM HUN-HYEOUNG
KR2 patents
Patents
2 patentsUS6706613B2Mar 16, 2004
Methods for manufacturing stacked gates including oxide/nitride/oxide (ONO) interlayer dielectrics using pre-annealing and/or post-annealing in nitrogen
SAMSUNG ELECTRONICS CO LTD12 citations71
US7008844B2Mar 7, 2006
Method of forming a gate of a non-volatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations49