Inventor
LOGAN RALPH A
US16 patents
⚠️ This page may combine multiple inventors who share the name “LOGAN RALPH A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
BELL TELEPHONE LABOR INC
8 patentsUS4136928AJan 30, 1979
Optical integrated circuit including junction laser with oblique mirror
BELL TELEPHONE LABOR INC52 citations92
US4390889AJun 28, 1983
Photodiode having an InGaAs layer with an adjacent InGaAsP p-n junction
BELL TELEPHONE LABOR INC23 citations81
US4226667AOct 7, 1980
Oxide masking of gallium arsenide
BELL TELEPHONE LABOR INC22 citations81
US4159452AJun 26, 1979
Dual beam double cavity heterostructure laser with branching output waveguides
BELL TELEPHONE LABOR INC30 citations78
US4269635AMay 26, 1981
Strip buried heterostructure laser
BELL TELEPHONE LABOR INC18 citations74
US4194933AMar 25, 1980
Method for fabricating junction lasers having lateral current confinement
BELL TELEPHONE LABOR INC16 citations74
US4190813AFeb 26, 1980
Strip buried heterostructure laser
BELL TELEPHONE LABOR INC16 citations74
US4169997AOct 2, 1979
Lateral current confinement in junction lasers
BELL TELEPHONE LABOR INC16 citations74
AT & T BELL LAB
7 patentsUS5040186AAug 13, 1991
InP-based quantum-well laser
AT & T BELL LAB31 citations92
US4575919AMar 18, 1986
Method of making heteroepitaxial ridge overgrown laser
AT & T BELL LAB25 citations82
US4464211AAug 7, 1984
Method for selective area growth by liquid phase epitaxy
AT & T BELL LAB14 citations74
US4953170AAug 28, 1990
Method for forming a heteroepitaxial structure, and a device manufactured thereby
AT & T BELL LAB15 citations73
US4481631ANov 6, 1984
Loss stabilized buried heterostructure laser
AT & T BELL LAB7 citations73
US4627065ADec 2, 1986
Double active layer semiconductor laser
AT & T BELL LAB6 citations63
US4536940AAug 27, 1985
Method of making a loss stabilized buried heterostructure laser
AT & T BELL LAB4 citations62