Inventor
FORBES LEONARD
US1,109 patents
Patents
50 patentsUS7902582B2Mar 8, 2011
Tantalum lanthanide oxynitride films
MICRON TECHNOLOGY INC523 citations99
US7605650B2Oct 20, 2009
Switched capacitor amplifier with higher gain and improved closed-loop gain accuracy
MICRON TECHNOLOGY INC136 citations99
US7405454B2Jul 29, 2008
Electronic apparatus with deposited dielectric layers
MICRON TECHNOLOGY INC585 citations99
US7393736B2Jul 1, 2008
Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics
MICRON TECHNOLOGY INC582 citations99
US7369435B2May 6, 2008
Write once read only memory employing floating gates
MICRON TECHNOLOGY INC277 citations99
US7312494B2Dec 25, 2007
Lanthanide oxide / hafnium oxide dielectric layers
MICRON TECHNOLOGY INC605 citations99
US7235501B2Jun 26, 2007
Lanthanum hafnium oxide dielectrics
MICRON TECHNOLOGY INC658 citations99
US7195999B2Mar 27, 2007
Metal-substituted transistor gates
MICRON TECHNOLOGY INC105 citations99
US7192892B2Mar 20, 2007
Atomic layer deposited dielectric layers
MICRON TECHNOLOGY INC630 citations99
US7192824B2Mar 20, 2007
Lanthanide oxide / hafnium oxide dielectric layers
MICRON TECHNOLOGY INC638 citations99
US7169673B2Jan 30, 2007
Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
MICRON TECHNOLOGY INC120 citations99
US7160577B2Jan 9, 2007
Methods for atomic-layer deposition of aluminum oxides in integrated circuits
MICRON TECHNOLOGY INC168 citations99
US7158410B2Jan 2, 2007
Integrated DRAM-NVRAM multi-level memory
MICRON TECHNOLOGY INC67 citations99
US7135421B2Nov 14, 2006
Atomic layer-deposited hafnium aluminum oxide
MICRON TECHNOLOGY INC664 citations99
US7120046B1Oct 10, 2006
Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines
MICRON TECHNOLOGY INC97 citations99
US7101813B2Sep 5, 2006
Atomic layer deposited Zr-Sn-Ti-O films
MICRON TECHNOLOGY INC105 citations99
US7084078B2Aug 1, 2006
Atomic layer deposited lanthanide doped TiOx dielectric films
MICRON TECHNOLOGY INC130 citations99
US7081421B2Jul 25, 2006
Lanthanide oxide dielectric layer
MICRON TECHNOLOGY INC119 citations99
US7068544B2Jun 27, 2006
Flash memory with low tunnel barrier interpoly insulators
MICRON TECHNOLOGY INC124 citations99
US7049192B2May 23, 2006
Lanthanide oxide / hafnium oxide dielectrics
MICRON TECHNOLOGY INC140 citations99
US7045430B2May 16, 2006
Atomic layer-deposited LaAlO3 films for gate dielectrics
MICRON TECHNOLOGY INC723 citations99
US7030436B2Apr 18, 2006
Embedded DRAM gain memory cell having MOS transistor body provided with a bi-polar transistor charge injecting means
MICRON TECHNOLOGY INC209 citations99
US7026694B2Apr 11, 2006
Lanthanide doped TiOx dielectric films by plasma oxidation
MICRON TECHNOLOGY INC126 citations99
US6989573B2Jan 24, 2006
Lanthanide oxide/zirconium oxide atomic layer deposited nanolaminate gate dielectrics
MICRON TECHNOLOGY INC169 citations99
US6979855B2Dec 27, 2005
High-quality praseodymium gate dielectrics
MICRON TECHNOLOGY INC101 citations99
US6960538B2Nov 1, 2005
Composite dielectric forming methods and composite dielectrics
MICRON TECHNOLOGY INC126 citations99
US6958302B2Oct 25, 2005
Atomic layer deposited Zr-Sn-Ti-O films using TiI4
MICRON TECHNOLOGY INC160 citations99
US6956256B2Oct 18, 2005
Vertical gain cell
MICRON TECHNOLOGY INC87 citations99
US6953730B2Oct 11, 2005
Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
MICRON TECHNOLOGY INC130 citations99
US6921702B2Jul 26, 2005
Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
MICRON TECHNOLOGY INC279 citations99
US6900122B2May 31, 2005
Low-temperature grown high-quality ultra-thin praseodymium gate dielectrics
MICRON TECHNOLOGY INC171 citations99
US6900521B2May 31, 2005
Vertical transistors and output prediction logic circuits containing same
MICRON TECHNOLOGY INC110 citations99
US6893984B2May 17, 2005
Evaporated LaA1O3 films for gate dielectrics
MICRON TECHNOLOGY INC187 citations99
US6888739B2May 3, 2005
Nanocrystal write once read only memory for archival storage
MICRON TECHNOLOGY INC134 citations99
US6884739B2Apr 26, 2005
Lanthanide doped TiOx dielectric films by plasma oxidation
MICRON TECHNOLOGY INC124 citations99
US6878991B1Apr 12, 2005
Vertical device 4F2 EEPROM memory
MICRON TECHNOLOGY INC101 citations99
US6858120B2Feb 22, 2005
Method and apparatus for the fabrication of ferroelectric films
MICRON TECHNOLOGY INC107 citations99
US6858865B2Feb 22, 2005
Doped aluminum oxide dielectrics
MICRON TECHNOLOGY INC91 citations99
US6858444B2Feb 22, 2005
Method for making a ferroelectric memory transistor
MICRON TECHNOLOGY INC139 citations99
US6844203B2Jan 18, 2005
Gate oxides, and methods of forming
MICRON TECHNOLOGY INC263 citations99
US6835111B2Dec 28, 2004
Field emission display having porous silicon dioxide layer
MICRON TECHNOLOGY INC109 citations99
US6818937B2Nov 16, 2004
Memory cell having a vertical transistor with buried source/drain and dual gates
MICRON TECHNOLOGY INC107 citations99
US6812513B2Nov 2, 2004
Method and structure for high capacitance memory cells
MICRON TECHNOLOGY INC102 citations99
US6804136B2Oct 12, 2004
Write once read only memory employing charge trapping in insulators
MICRON TECHNOLOGY INC96 citations99
US6790791B2Sep 14, 2004
Lanthanide doped TiOx dielectric films
MICRON TECHNOLOGY INC119 citations99
US6787413B2Sep 7, 2004
Capacitor structure forming methods
MICRON TECHNOLOGY INC129 citations99
US6778441B2Aug 17, 2004
Integrated circuit memory device and method
MICRON TECHNOLOGY INC220 citations99
US6774050B2Aug 10, 2004
Doped aluminum oxide dielectrics
MICRON TECHNOLOGY INC76 citations99
US6767795B2Jul 27, 2004
Highly reliable amorphous high-k gate dielectric ZrOXNY
MICRON TECHNOLOGY INC210 citations99
US6756298B2Jun 29, 2004
Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals
MICRON TECHNOLOGY INC92 citations99
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