Inventor

AHN KIE Y

US597 patents

Patents

50 patents

US7902582B2Mar 8, 2011

Memory cell having a vertical transistor with buried source/drain and dual gates

MICRON TECHNOLOGY INC107 citations99

US6812513B2Nov 2, 2004

Method and structure for high capacitance memory cells

MICRON TECHNOLOGY INC102 citations99

US6790791B2Sep 14, 2004

Lanthanide doped TiOx dielectric films

MICRON TECHNOLOGY INC119 citations99

US6787413B2Sep 7, 2004

Capacitor structure forming methods

MICRON TECHNOLOGY INC129 citations99

US6778441B2Aug 17, 2004

Integrated circuit memory device and method

MICRON TECHNOLOGY INC220 citations99

US6767795B2Jul 27, 2004

Highly reliable amorphous high-k gate dielectric ZrOXNY

MICRON TECHNOLOGY INC210 citations99

US6756298B2Jun 29, 2004

Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals

MICRON TECHNOLOGY INC92 citations99

US6720221B1Apr 13, 2004

Structure and method for dual gate oxide thicknesses

MICRON TECHNOLOGY INC142 citations99

US6710538B1Mar 23, 2004

Field emission display having reduced power requirements and method

MICRON TECHNOLOGY INC124 citations99

US6709978B2Mar 23, 2004

Method for forming integrated circuits using high aspect ratio vias through a semiconductor wafer

MICRON TECHNOLOGY INC133 citations99

US6689660B1Feb 10, 2004

4 F2 folded bit line DRAM cell structure having buried bit and word lines

MICRON TECHNOLOGY INC356 citations99

US6661058B2Dec 9, 2003

Highly reliable gate oxide and method of fabrication

MICRON TECHNOLOGY INC130 citations99

US6639268B2Oct 28, 2003

Flash memory with ultra thin vertical body transistors

MICRON TECHNOLOGY INC118 citations99

US6608378B2Aug 19, 2003

Formation of metal oxide gate dielectric

MICRON TECHNOLOGY INC131 citations99

US6593656B2Jul 15, 2003

Multilevel copper interconnects for ultra large scale integration

MICRON TECHNOLOGY INC124 citations99

US6586792B2Jul 1, 2003

Structures, methods, and systems for ferroelectric memory transistors

MICRON TECHNOLOGY INC112 citations99

US6570248B1May 27, 2003

Structure and method for a high-performance electronic packaging assembly

MICRON TECHNOLOGY INC363 citations99

US6559491B2May 6, 2003

Folded bit line DRAM with ultra thin body transistors

MICRON TECHNOLOGY INC201 citations99

US6552564B1Apr 22, 2003

Technique to reduce reflections and ringing on CMOS interconnections

MICRON TECHNOLOGY INC238 citations99

Showing the top 50 of 597 patents by PatentIndex Score.

AHN KIE Y

Patents

Tantalum lanthanide oxynitride films

Electronic apparatus with deposited dielectric layers

Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics

Lanthanide oxide / hafnium oxide dielectric layers

Lanthanum hafnium oxide dielectrics

Metal-substituted transistor gates

Atomic layer deposited dielectric layers

Lanthanide oxide / hafnium oxide dielectric layers

Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics

Methods for atomic-layer deposition of aluminum oxides in integrated circuits

Atomic layer-deposited hafnium aluminum oxide

Atomic layer deposited Zr-Sn-Ti-O films

Atomic layer deposited lanthanide doped TiOx dielectric films

Lanthanide oxide dielectric layer

Lanthanide oxide / hafnium oxide dielectrics

Atomic layer-deposited LaAlO3 films for gate dielectrics

Lanthanide doped TiOx dielectric films by plasma oxidation

High-quality praseodymium gate dielectrics

Composite dielectric forming methods and composite dielectrics

Atomic layer deposited Zr-Sn-Ti-O films using TiI4

Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics

Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics

Vertical transistors and output prediction logic circuits containing same

Low-temperature grown high-quality ultra-thin praseodymium gate dielectrics

Evaporated LaA1O3 films for gate dielectrics

Lanthanide doped TiOx dielectric films by plasma oxidation

Method and apparatus for the fabrication of ferroelectric films

Method for making a ferroelectric memory transistor

Methods, systems, and apparatus for uniform chemical-vapor depositions

Gate oxides, and methods of forming

Field emission display having porous silicon dioxide layer

Memory cell having a vertical transistor with buried source/drain and dual gates

Method and structure for high capacitance memory cells

Lanthanide doped TiOx dielectric films

Capacitor structure forming methods

Integrated circuit memory device and method

Highly reliable amorphous high-k gate dielectric ZrOXNY

Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals

Structure and method for dual gate oxide thicknesses

Field emission display having reduced power requirements and method

Method for forming integrated circuits using high aspect ratio vias through a semiconductor wafer

4 F2 folded bit line DRAM cell structure having buried bit and word lines

Highly reliable gate oxide and method of fabrication

Flash memory with ultra thin vertical body transistors

Formation of metal oxide gate dielectric

Multilevel copper interconnects for ultra large scale integration

Structures, methods, and systems for ferroelectric memory transistors

Structure and method for a high-performance electronic packaging assembly

Folded bit line DRAM with ultra thin body transistors

Technique to reduce reflections and ringing on CMOS interconnections