P

Inventor

AGARWALA BIRENDRA N

US16 patents

Patents

16 patents
US6033939AMar 7, 2000

Method for providing electrically fusible links in copper interconnection

IBM152 citations98
US5376584ADec 27, 1994

Process of making pad structure for solder ball limiting metallurgy having reduced edge stress

IBM163 citations98
US5251806AOct 12, 1993

Method of forming dual height solder interconnections

IBM144 citations98
US5130779AJul 14, 1992

Solder mass having conductive encapsulating arrangement

IBM185 citations98
US6734090B2May 11, 2004

Method of making an edge seal for a semiconductor device

IBM605 citations97
US5268072ADec 7, 1993

Etching processes for avoiding edge stress in semiconductor chip solder bumps

IBM119 citations96
US7279411B2Oct 9, 2007

Process for forming a redundant structure

IBM23 citations92
US7224063B2May 29, 2007

Dual-damascene metallization interconnection

IBM30 citations92
US4985310AJan 15, 1991

Multilayered metallurgical structure for an electronic component

IBM51 citations92
US4970570ANov 13, 1990

Use of tapered head pin design to improve the stress distribution in the braze joint

IBM34 citations92
US7163883B2Jan 16, 2007

Edge seal for a semiconductor device

IBM27 citations91
US6972209B2Dec 6, 2005

Stacked via-stud with improved reliability in copper metallurgy

IBM32 citations90
US6825561B1Nov 30, 2004

Structure and method for eliminating time dependent dielectric breakdown failure of low-k material

IBM15 citations84
US6271599B1Aug 7, 2001

Wire interconnect structure for electrically and mechanically connecting an integrated circuit chip to a substrate

IBM16 citations84
US7470613B2Dec 30, 2008

Dual damascene multi-level metallization

IBM7 citations73
US7138714B2Nov 21, 2006

Via barrier layers continuous with metal line barrier layers at notched or dielectric mesa portions in metal lines

IBM10 citations73