P

Inventor

HORIGUCHI FUMIO

JP33 patents
⚠️ This page may combine multiple inventors who share the name “HORIGUCHI FUMIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

30 patents
US6548848B2Apr 15, 2003

Semiconductor memory device

TOSHIBA KK260 citations99
US5258635ANov 2, 1993

MOS-type semiconductor integrated circuit device

TOSHIBA KK249 citations99
US4979014ADec 18, 1990

MOS transistor

TOSHIBA KK183 citations99
US7042040B2May 9, 2006

Semiconductor device and method for manufacturing the same

TOSHIBA KK93 citations98
US6891225B2May 10, 2005

Dynamic semiconductor memory device

TOSHIBA KK83 citations98
US5371024ADec 6, 1994

Semiconductor device and process for manufacturing the same

TOSHIBA KK128 citations98
US5895946AApr 20, 1999

MOS random access memory having array of trench type one-capacitor/one-transistor memory cells

TOSHIBA KK48 citations96
US5731609AMar 24, 1998

MOS random access memory having array of trench type one-capacitor/one-transistor memory cells

TOSHIBA KK41 citations96
US5477071ADec 19, 1995

MOS random access memory having array of trench type one-capacitor/one-transistor memory cells

TOSHIBA KK58 citations96
US5235199AAug 10, 1993

Semiconductor memory with pad electrode and bit line under stacked capacitor

TOSHIBA KK48 citations96
US5138412AAug 11, 1992

Dynamic ram, having an improved large capacitance

TOSHIBA KK65 citations96
US5561311AOct 1, 1996

Semiconductor memory with insulation film embedded in groove formed on substrate

TOSHIBA KK31 citations93
US5387532AFeb 7, 1995

Semiconductor memory having capacitor electrode formed above bit line

TOSHIBA KK35 citations93
US5350708ASep 27, 1994

Method of making dynamic random access semiconductor memory device

TOSHIBA KK23 citations93
US5049957ASep 17, 1991

MOS type dynamic random access memory

TOSHIBA KK32 citations93
US5043298AAug 27, 1991

Process for manufacturing a DRAM cell

TOSHIBA KK23 citations93
US5363325ANov 8, 1994

Dynamic semiconductor memory device having high integration density

TOSHIBA KK46 citations92
US5106774AApr 21, 1992

Method of making trench type dynamic random access memory device

TOSHIBA KK22 citations92
US4799193AJan 17, 1989

Semiconductor memory devices

TOSHIBA KK33 citations92
US4992389AFeb 12, 1991

Making a self aligned semiconductor device

TOSHIBA KK36 citations91
US5250830AOct 5, 1993

Dynamic type semiconductor memory device and its manufacturing method

TOSHIBA KK20 citations82
US7075820B2Jul 11, 2006

Semiconductor memory device for dynamically storing data with channel body of transistor used as storage node

TOSHIBA KK9 citations74
US7042753B2May 9, 2006

Multi-value magnetic random access memory with stacked tunnel magnetoresistance (TMR) elements

TOSHIBA KK10 citations74
US6232822B1May 15, 2001

Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism

TOSHIBA KK13 citations74
US5202751AApr 13, 1993

Semiconductor integrated circuit

TOSHIBA KK12 citations74
US5227319AJul 13, 1993

Method of manufacturing a semiconductor device

TOSHIBA KK7 citations72
US5488242AJan 30, 1996

Semiconductor memory device

TOSHIBA KK13 citations70
US4831433AMay 16, 1989

Semiconductor device

TOSHIBA KK9 citations68
US4641280AFeb 3, 1987

High-density semiconductor memory device with charge-coupling memory cells

TOSHIBA KK6 citations63
US6292390B1Sep 18, 2001

Semiconductor device

TOSHIBA KK0 citations52

TOKYO SHIBAURA ELECTRIC CO

2 patents

KABUSHIKI KASIHA TOSHIBA

1 patent