Inventor
HORIGUCHI FUMIO
JP33 patents
⚠️ This page may combine multiple inventors who share the name “HORIGUCHI FUMIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
30 patentsUS6548848B2Apr 15, 2003
Semiconductor memory device
TOSHIBA KK260 citations99
US5258635ANov 2, 1993
MOS-type semiconductor integrated circuit device
TOSHIBA KK249 citations99
US4979014ADec 18, 1990
MOS transistor
TOSHIBA KK183 citations99
US7042040B2May 9, 2006
Semiconductor device and method for manufacturing the same
TOSHIBA KK93 citations98
US6891225B2May 10, 2005
Dynamic semiconductor memory device
TOSHIBA KK83 citations98
US5371024ADec 6, 1994
Semiconductor device and process for manufacturing the same
TOSHIBA KK128 citations98
US5895946AApr 20, 1999
MOS random access memory having array of trench type one-capacitor/one-transistor memory cells
TOSHIBA KK48 citations96
US5731609AMar 24, 1998
MOS random access memory having array of trench type one-capacitor/one-transistor memory cells
TOSHIBA KK41 citations96
US5477071ADec 19, 1995
MOS random access memory having array of trench type one-capacitor/one-transistor memory cells
TOSHIBA KK58 citations96
US5235199AAug 10, 1993
Semiconductor memory with pad electrode and bit line under stacked capacitor
TOSHIBA KK48 citations96
US5138412AAug 11, 1992
Dynamic ram, having an improved large capacitance
TOSHIBA KK65 citations96
US5561311AOct 1, 1996
Semiconductor memory with insulation film embedded in groove formed on substrate
TOSHIBA KK31 citations93
US5387532AFeb 7, 1995
Semiconductor memory having capacitor electrode formed above bit line
TOSHIBA KK35 citations93
US5350708ASep 27, 1994
Method of making dynamic random access semiconductor memory device
TOSHIBA KK23 citations93
US5049957ASep 17, 1991
MOS type dynamic random access memory
TOSHIBA KK32 citations93
US5043298AAug 27, 1991
Process for manufacturing a DRAM cell
TOSHIBA KK23 citations93
US5363325ANov 8, 1994
Dynamic semiconductor memory device having high integration density
TOSHIBA KK46 citations92
US5106774AApr 21, 1992
Method of making trench type dynamic random access memory device
TOSHIBA KK22 citations92
US4799193AJan 17, 1989
Semiconductor memory devices
TOSHIBA KK33 citations92
US4992389AFeb 12, 1991
Making a self aligned semiconductor device
TOSHIBA KK36 citations91
US5250830AOct 5, 1993
Dynamic type semiconductor memory device and its manufacturing method
TOSHIBA KK20 citations82
US7075820B2Jul 11, 2006
Semiconductor memory device for dynamically storing data with channel body of transistor used as storage node
TOSHIBA KK9 citations74
US7042753B2May 9, 2006
Multi-value magnetic random access memory with stacked tunnel magnetoresistance (TMR) elements
TOSHIBA KK10 citations74
US6232822B1May 15, 2001
Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanism
TOSHIBA KK13 citations74
US5202751AApr 13, 1993
Semiconductor integrated circuit
TOSHIBA KK12 citations74
US5227319AJul 13, 1993
Method of manufacturing a semiconductor device
TOSHIBA KK7 citations72
US5488242AJan 30, 1996
Semiconductor memory device
TOSHIBA KK13 citations70
US4831433AMay 16, 1989
Semiconductor device
TOSHIBA KK9 citations68
US4641280AFeb 3, 1987
High-density semiconductor memory device with charge-coupling memory cells
TOSHIBA KK6 citations63
US6292390B1Sep 18, 2001
Semiconductor device
TOSHIBA KK0 citations52