Inventor
ZHU TINGGANG
US28 patents
⚠️ This page may combine multiple inventors who share the name “ZHU TINGGANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ALPHA & OMEGA SEMICONDUCTOR
17 patentsUS8013414B2Sep 6, 2011
Gallium nitride semiconductor device with improved forward conduction
ALPHA & OMEGA SEMICONDUCTOR10 citations84
US7842974B2Nov 30, 2010
Gallium nitride heterojunction schottky diode
ALPHA & OMEGA SEMICONDUCTOR12 citations84
US10038106B2Jul 31, 2018
Termination structure for gallium nitride Schottky diode
ALPHA & OMEGA SEMICONDUCTOR2 citations73
US9520480B1Dec 13, 2016
Normally off gallium nitride field effect transistors (FET)
ALPHA & OMEGA SEMICONDUCTOR1 citations63
US9406661B2Aug 2, 2016
Protection circuit including vertical gallium nitride schottky diode and PN junction diode
ALPHA & OMEGA SEMICONDUCTOR2 citations63
US9064945B2Jun 23, 2015
Normally off gallium nitride field effect transistors (FET)
ALPHA & OMEGA SEMICONDUCTOR1 citations63
US8927402B2Jan 6, 2015
Method for forming termination structure for gallium nitride Schottky diode
ALPHA & OMEGA SEMICONDUCTOR2 citations63
US8372738B2Feb 12, 2013
Method for manufacturing a gallium nitride based semiconductor device with improved termination scheme
ALPHA & OMEGA SEMICONDUCTOR2 citations62
US10573762B2Feb 25, 2020
Vertical gallium nitride Schottky diode
ALPHA & OMEGA SEMICONDUCTOR0 citations52
US10439058B2Oct 8, 2019
Normally off gallium nitride field effect transistors (FET)
ALPHA & OMEGA SEMICONDUCTOR0 citations52
US10333006B2Jun 25, 2019
Termination structure for gallium nitride Schottky diode including junction barriar diodes
ALPHA & OMEGA SEMICONDUCTOR0 citations52
US10177221B2Jan 8, 2019
Integrated Schottky diode in high voltage semiconductor device
ALPHA & OMEGA SEMICONDUCTOR0 citations52
US10020389B2Jul 10, 2018
Normally off gallium nitride field effect transistors (FET)
ALPHA & OMEGA SEMICONDUCTOR0 citations52
US9728655B2Aug 8, 2017
Termination structure for gallium nitride schottky diode
ALPHA & OMEGA SEMICONDUCTOR0 citations52
US8994140B2Mar 31, 2015
Vertical gallium nitride Schottky diode
ALPHA & OMEGA SEMICONDUCTOR0 citations52
US8383499B2Feb 26, 2013
Method for forming gallium nitride semiconductor device with improved forward conduction
ALPHA & OMEGA SEMICONDUCTOR0 citations52
US10170563B2Jan 1, 2019
Gallium nitride semiconductor device with improved termination scheme
ALPHA & OMEGA SEMICONDUCTOR0 citations41
GUAN LINGPENG
5 patentsUS8476698B2Jul 2, 2013
Corner layout for superjunction device
GUAN LINGPENG20 citations92
US8975720B2Mar 10, 2015
Corner layout for superjunction device
GUAN LINGPENG11 citations84
US8829614B2Sep 9, 2014
Integrated Schottky diode in high voltage semiconductor device
GUAN LINGPENG10 citations84
US9876073B2Jan 23, 2018
Integrated Schottky diode in high voltage semiconductor device
GUAN LINGPENG3 citations73
US9620584B2Apr 11, 2017
Integrated Schottky diode in high voltage semiconductor device
GUAN LINGPENG3 citations73
ZHU TINGGANG
3 patentsUS8772901B2Jul 8, 2014
Termination structure for gallium nitride schottky diode
ZHU TINGGANG6 citations80
US8772144B2Jul 8, 2014
Vertical gallium nitride Schottky diode
ZHU TINGGANG2 citations61
US8253216B2Aug 28, 2012
Gallium nitride semiconductor device with improved forward conduction
ZHU TINGGANG0 citations50