Inventor
KIM HYOUNG-SUB
KR27 patents
⚠️ This page may combine multiple inventors who share the name “KIM HYOUNG-SUB”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
22 patentsUS5574299ANov 12, 1996
Semiconductor device having vertical conduction transistors and cylindrical cell gates
SAMSUNG ELECTRONICS CO LTD168 citations99
US6939765B2Sep 6, 2005
Integration method of a semiconductor device having a recessed gate electrode
SAMSUNG ELECTRONICS CO LTD25 citations92
US5547889AAug 20, 1996
Method of forming a semiconductor device having vertical conduction transistors and cylindrical cell gates
SAMSUNG ELECTRONICS CO LTD26 citations92
US5476807ADec 19, 1995
Method for forming fine patterns in a semiconductor device
SAMSUNG ELECTRONICS CO LTD21 citations91
US10037999B2Jul 31, 2018
Semiconductor device including landing pad for connecting substrate and capacitor
SAMSUNG ELECTRONICS CO LTD10 citations84
US9953981B2Apr 24, 2018
Methods of manufacturing semiconductor devices having buried contacts and related semiconductor devices
SAMSUNG ELECTRONICS CO LTD7 citations84
US5753562AMay 19, 1998
Methods of forming semiconductor devices in substrates having inverted-trench isolation regions therein
SAMSUNG ELECTRONICS CO LTD17 citations84
US7183600B2Feb 27, 2007
Semiconductor device with trench gate type transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD11 citations83
US6218690B1Apr 17, 2001
Transistor having reverse self-aligned structure
SAMSUNG ELECTRONICS CO LTD11 citations74
US9613966B2Apr 4, 2017
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations73
US6051492AApr 18, 2000
Method of manufacturing a wiring layer in semiconductor device
SAMSUNG ELECTRONICS CO LTD12 citations73
US9349633B2May 24, 2016
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations72
US11705503B2Jul 18, 2023
Semiconductor device including non-sacrificial gate spacers and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US7135744B2Nov 14, 2006
Semiconductor device having self-aligned contact hole and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7057242B2Jun 6, 2006
Transistor structures having access gates with narrowed central portions
SAMSUNG ELECTRONICS CO LTD2 citations63
US6168990B1Jan 2, 2001
Method for fabricating Dram cell capacitor
SAMSUNG ELECTRONICS CO LTD3 citations63
US7709346B2May 4, 2010
Semiconductor device with trench gate type transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations59
US7592215B2Sep 22, 2009
Semiconductor device having self-aligned contact hole and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US10811541B2Oct 20, 2020
Semiconductor device having germanium containing active pattern and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations49
US11062818B2Jul 13, 2021
Stacking structure having material layer on graphene layer and method of forming material layer on graphene layer
SAMSUNG ELECTRONICS CO LTD0 citations47
US9754944B2Sep 5, 2017
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations42
US6696722B1Feb 24, 2004
Storage node of DRAM cell
SAMSUNG ELECTRONICS CO LTD0 citations42