Inventor
CHIANG CHIEN
US38 patents
⚠️ This page may combine multiple inventors who share the name “CHIANG CHIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
29 patentsUS6861267B2Mar 1, 2005
Reducing shunts in memories with phase-change material
INTEL CORP334 citations99
US6797979B2Sep 28, 2004
Metal structure for a phase-change memory device
INTEL CORP294 citations99
US6569705B2May 27, 2003
Metal structure for a phase-change memory device
INTEL CORP345 citations99
US6545287B2Apr 8, 2003
Using selective deposition to form phase-change memory cells
INTEL CORP372 citations99
US6339544B1Jan 15, 2002
Method to enhance performance of thermal resistor device
INTEL CORP756 citations99
US5817572AOct 6, 1998
Method for forming multileves interconnections for semiconductor fabrication
INTEL CORP242 citations99
US5739579AApr 14, 1998
Method for forming interconnections for semiconductor fabrication and semiconductor device having such interconnections
INTEL CORP427 citations99
US6404665B1Jun 11, 2002
Compositionally modified resistive electrode
INTEL CORP229 citations98
US6143647ANov 7, 2000
Silicon-rich block copolymers to achieve unbalanced vias
INTEL CORP93 citations98
US6848177B2Feb 1, 2005
Integrated circuit die and an electronic assembly having a three-dimensional interconnection scheme
INTEL CORP86 citations97
US6303464B1Oct 16, 2001
Method and structure for reducing interconnect system capacitance through enclosed voids in a dielectric layer
INTEL CORP87 citations96
US6051869AApr 18, 2000
Silicon-rich block copolymers to achieve unbalanced vias
INTEL CORP60 citations96
US5886410AMar 23, 1999
Interconnect structure with hard mask and low dielectric constant materials
INTEL CORP110 citations96
US6309956B1Oct 30, 2001
Fabricating low K dielectric interconnect systems by using dummy structures to enhance process
INTEL CORP138 citations95
US6027995AFeb 22, 2000
Method for fabricating an interconnect structure with hard mask and low dielectric constant materials
INTEL CORP59 citations94
US5935868AAug 10, 1999
Interconnect structure and method to achieve unlanded vias for low dielectric constant materials
INTEL CORP69 citations94
US7217945B2May 15, 2007
Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory cell and structures obtained thereby
INTEL CORP15 citations93
US7214632B2May 8, 2007
Using selective deposition to form phase-change memory cells
INTEL CORP19 citations93
US7183567B2Feb 27, 2007
Using selective deposition to form phase-change memory cells
INTEL CORP16 citations93
US6777320B1Aug 17, 2004
In-plane on-chip decoupling capacitors and method for making same
INTEL CORP29 citations93
US6239019B1May 29, 2001
Interconnect structure using a combination of hard dielectric and polymer as interlayer dielectrics
INTEL CORP17 citations93
US6040628AMar 21, 2000
Interconnect structure using a combination of hard dielectric and polymer as interlayer dielectrics
INTEL CORP36 citations93
US6277765B1Aug 21, 2001
Low-K Dielectric layer and method of making same
INTEL CORP47 citations92
US5880030AMar 9, 1999
Unlanded via structure and method for making same
INTEL CORP30 citations92
US6037249AMar 14, 2000
Method for forming air gaps for advanced interconnect systems
INTEL CORP48 citations89
US7112887B2Sep 26, 2006
Integrated circuit die and an electronic assembly having a three-dimensional interconnection scheme
INTEL CORP15 citations83
US6770524B2Aug 3, 2004
Method to enhance performance of thermal resistor device
INTEL CORP6 citations74
US6949831B2Sep 27, 2005
In-plane on-chip decoupling capacitors and method for making same
INTEL CORP2 citations63
US7161225B2Jan 9, 2007
Reducing shunts in memories with phase-change material
INTEL CORP1 citations52
OVONYX INC
7 patentsUS6673700B2Jan 6, 2004
Reduced area intersection between electrode and programming element
OVONYX INC648 citations99
US6621095B2Sep 16, 2003
Method to enhance performance of thermal resistor device
OVONYX INC480 citations99
US6563164B2May 13, 2003
Compositionally modified resistive electrode
OVONYX INC306 citations98
US6869883B2Mar 22, 2005
Forming phase change memories
OVONYX INC40 citations96
US7196351B2Mar 27, 2007
Forming phase change memories
OVONYX INC17 citations93
US7348620B2Mar 25, 2008
Forming phase change memories
OVONYX INC10 citations84
US6878618B2Apr 12, 2005
Compositionally modified resistive electrode
OVONYX INC9 citations73