Inventor
JOHANSSON TED
SE35 patents
⚠️ This page may combine multiple inventors who share the name “JOHANSSON TED”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ERICSSON TELEFON AB L M
21 patentsUS6720229B2Apr 13, 2004
Integrated circuit inductor structure and non-destructive etch depth measurement
ERICSSON TELEFON AB L M33 citations92
US6440810B1Aug 27, 2002
Method in the fabrication of a silicon bipolar transistor
ERICSSON TELEFON AB L M32 citations92
US6413835B1Jul 2, 2002
Semiconductor structure and fabrication method of shallow and deep trenches
ERICSSON TELEFON AB L M21 citations92
US5907180AMay 25, 1999
Ballast monitoring for radio frequency power transistors
ERICSSON TELEFON AB L M25 citations92
US6459140B1Oct 1, 2002
Indium-enhanced bipolar transistor
ERICSSON TELEFON AB L M18 citations84
US6365918B1Apr 2, 2002
Method and device for interconnected radio frequency power SiC field effect transistors
ERICSSON TELEFON AB L M17 citations84
US6690080B2Feb 10, 2004
Semiconductor structure for isolation of semiconductor devices
ERICSSON TELEFON AB L M14 citations83
US6953981B1Oct 11, 2005
Semiconductor device with deep substrates contacts
ERICSSON TELEFON AB L M16 citations81
US6313001B1Nov 6, 2001
Method for semiconductor manufacturing
ERICSSON TELEFON AB L M16 citations81
US5587333ADec 24, 1996
Capacitor in an integrated function block or an integrated circuit having high capacitance, a method for manufacturing said capacitor and utilizing of said capacitor as an integrated decoupling capacitor
ERICSSON TELEFON AB L M17 citations79
US6483170B2Nov 19, 2002
RF power transistor
ERICSSON TELEFON AB L M13 citations74
US6329259B1Dec 11, 2001
Collector-up RF power transistor
ERICSSON TELEFON AB L M10 citations74
US6114930ASep 5, 2000
Impedance controlled by the phase angle between two signals
ERICSSON TELEFON AB L M12 citations71
US5606197AFeb 25, 1997
High capacitance capacitor in an integrated function block or an integrated circuit
ERICSSON TELEFON AB L M13 citations71
US6198156B1Mar 6, 2001
Bipolar power transistors and manufacturing method
ERICSSON TELEFON AB L M7 citations66
US6340618B1Jan 22, 2002
RF power transistor
ERICSSON TELEFON AB L M2 citations63
US6579773B2Jun 17, 2003
Transistor device and fabrication method thereof
ERICSSON TELEFON AB L M3 citations62
US5684326ANov 4, 1997
Emitter ballast bypass for radio frequency power transistors
ERICSSON TELEFON AB L M6 citations62
US6239475B1May 29, 2001
Vertical bipolar transistor having a field shield between the metallic interconnecting layer and the insulation oxide
ERICSSON TELEFON AB L M3 citations58
US6077753AJun 20, 2000
Method for manufacturing vertical bipolar transistor having a field shield between an interconnecting layer and the field oxide
ERICSSON TELEFON AB L M4 citations58
US11463970B2Oct 4, 2022
Wireless reference signal distribution
ERICSSON TELEFON AB L M0 citations52
INFINEON TECHNOLOGIES AG
12 patentsUS7682919B2Mar 23, 2010
Semiconductor process and PMOS varactor
INFINEON TECHNOLOGIES AG8 citations84
US7618865B2Nov 17, 2009
Method in the fabrication of a monolithically integrated vertical device on an SOI substrate
INFINEON TECHNOLOGIES AG8 citations84
US7119415B2Oct 10, 2006
Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof
INFINEON TECHNOLOGIES AG12 citations84
US7008851B2Mar 7, 2006
Silicon-germanium mesa transistor
INFINEON TECHNOLOGIES AG11 citations84
US7217609B2May 15, 2007
Semiconductor fabrication process, lateral PNP transistor, and integrated circuit
INFINEON TECHNOLOGIES AG9 citations74
US7025615B2Apr 11, 2006
Fabrication method, varactor, and integrated circuit
INFINEON TECHNOLOGIES AG7 citations72
US7871881B2Jan 18, 2011
Method for fabrication of a capacitor, and a monolithically integrated circuit comprising such a capacitor
INFINEON TECHNOLOGIES AG2 citations63
US7456069B2Nov 25, 2008
Method in the fabrication of an integrated injection logic circuit
INFINEON TECHNOLOGIES AG3 citations63
US6852638B2Feb 8, 2005
Selective base etching
INFINEON TECHNOLOGIES AG3 citations63
US7534685B2May 19, 2009
Method for fabrication of a capacitor, and a monolithically integrated circuit comprising such a capacitor
INFINEON TECHNOLOGIES AG0 citations52
US6884703B2Apr 26, 2005
Manufacturing of a low-noise mos device
INFINEON TECHNOLOGIES AG1 citations51
US6911368B2Jun 28, 2005
Arrangement for preventing short-circuiting in a bipolar double-poly transistor and a method of fabricating such an arrangement
INFINEON TECHNOLOGIES AG0 citations42