P

Inventor

HWANG YOO-SANG

KR91 patents
⚠️ This page may combine multiple inventors who share the name “HWANG YOO-SANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

43 patents
US6489195B1Dec 3, 2002

Method for fabricating DRAM cell using a protection layer

SAMSUNG ELECTRONICS CO LTD48 citations96
US6613621B2Sep 2, 2003

Methods of forming self-aligned contact pads using a damascene gate process

SAMSUNG ELECTRONICS CO LTD71 citations94
US6929999B2Aug 16, 2005

Method of manufacturing semiconductor device with contact body extending in direction of bit line to contact storage node

SAMSUNG ELECTRONICS CO LTD25 citations93
US6720269B2Apr 13, 2004

Semiconductor device having a self-aligned contact structure and methods of forming the same

SAMSUNG ELECTRONICS CO LTD17 citations93
US6534813B1Mar 18, 2003

Semiconductor device having a self-aligned contact structure and methods of forming the same

SAMSUNG ELECTRONICS CO LTD19 citations93
US7026208B2Apr 11, 2006

Methods of forming integrated circuit devices including cylindrical capacitors having supporters between lower electrodes

SAMSUNG ELECTRONICS CO LTD28 citations92
US6764941B2Jul 20, 2004

Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD33 citations92
US6548853B1Apr 15, 2003

Cylindrical capacitors having a stepped sidewall and methods for fabricating the same

SAMSUNG ELECTRONICS CO LTD50 citations92
US6518671B1Feb 11, 2003

Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD18 citations92
US6479343B1Nov 12, 2002

DRAM cell capacitor and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD26 citations92
US6235573B1May 22, 2001

Methods of forming ferroelectric random access memory devices having shared capacitor electrodes

SAMSUNG ELECTRONICS CO LTD31 citations92
US6218296B1Apr 17, 2001

Semiconductor device with pillar-shaped capacitor storage node and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD16 citations92
US11482285B2Oct 25, 2022

Integrated circuit devices and methods of manufacturing same

SAMSUNG ELECTRONICS CO LTD6 citations85
US10573652B2Feb 25, 2020

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US9953981B2Apr 24, 2018

Methods of manufacturing semiconductor devices having buried contacts and related semiconductor devices

SAMSUNG ELECTRONICS CO LTD7 citations84
US9576902B2Feb 21, 2017

Semiconductor device including landing pad

SAMSUNG ELECTRONICS CO LTD5 citations84
US9159730B2Oct 13, 2015

Methods for fabricating a semiconductor device

SAMSUNG ELECTRONICS CO LTD11 citations84
US7078292B2Jul 18, 2006

Storage node contact forming method and structure for use in semiconductor memory

SAMSUNG ELECTRONICS CO LTD20 citations84
US6977197B2Dec 20, 2005

Semiconductor devices having DRAM cells and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD14 citations84
US6638805B2Oct 28, 2003

Method of fabricating a DRAM semiconductor device

SAMSUNG ELECTRONICS CO LTD15 citations84
US11121134B2Sep 14, 2021

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations83
US10332831B2Jun 25, 2019

Semiconductor device including a bit line

SAMSUNG ELECTRONICS CO LTD7 citations83
US9634012B2Apr 25, 2017

Method of forming active patterns, active pattern array, and method of manufacturing a semiconductor device

SAMSUNG ELECTRONICS CO LTD15 citations83
US7749834B2Jul 6, 2010

Method of fabricating semiconductor devices having buried contact plugs

SAMSUNG ELECTRONICS CO LTD16 citations79
US7262108B2Aug 28, 2007

Methods for forming resistors for integrated circuit devices

SAMSUNG ELECTRONICS CO LTD7 citations74
US7176552B2Feb 13, 2007

Semiconductor memory device having a decoupling capacitor

SAMSUNG ELECTRONICS CO LTD8 citations74
US6815300B2Nov 9, 2004

Method for manufacturing semiconductor device having increased effective channel length

SAMSUNG ELECTRONICS CO LTD12 citations74
US6703657B2Mar 9, 2004

DRAM cell having electrode with protection layer

SAMSUNG ELECTRONICS CO LTD9 citations74
US6656790B2Dec 2, 2003

Method for manufacturing a semiconductor device including storage nodes of capacitor

SAMSUNG ELECTRONICS CO LTD9 citations74
US6288446B2Sep 11, 2001

Semiconductor device with pillar-shaped capacitor storage node

SAMSUNG ELECTRONICS CO LTD5 citations74
US11594538B2Feb 28, 2023

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations73
US11251307B2Feb 15, 2022

Device comprising 2D material

SAMSUNG ELECTRONICS CO LTD2 citations73
US10665498B2May 26, 2020

Semiconductor device having air gap spacer and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD5 citations73
US10515798B2Dec 24, 2019

Method of fabricating device including two-dimensional material

SAMSUNG ELECTRONICS CO LTD4 citations73
US9972527B2May 15, 2018

Semiconductor device including air spacer

SAMSUNG ELECTRONICS CO LTD4 citations73
US9559103B2Jan 31, 2017

Memory device including selectively disposed landing pads expanded over signal line

SAMSUNG ELECTRONICS CO LTD6 citations73
US9437560B2Sep 6, 2016

Semiconductor device including landing pad

SAMSUNG ELECTRONICS CO LTD4 citations73
US9337151B2May 10, 2016

Semiconductor device

SAMSUNG ELECTRONICS CO LTD4 citations73
US9117696B2Aug 25, 2015

Semiconductor devices having balancing capacitor and methods of forming the same

SAMSUNG ELECTRONICS CO LTD5 citations73
US6927126B2Aug 9, 2005

Method of manufacturing semiconductor device with interconnections and interconnection contacts and a device formed thereby

SAMSUNG ELECTRONICS CO LTD8 citations73
US6670663B2Dec 30, 2003

DRAM cell capacitor and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD10 citations73
US6277702B1Aug 21, 2001

Capacitor of a semiconductor device and a method of fabricating the same

SAMSUNG ELECTRONICS CO LTD11 citations73
US6229171B1May 8, 2001

Storage element for semiconductor capacitor

SAMSUNG ELECTRONICS CO LTD10 citations73

KIM DAE-IK

3 patents

KIM HUI-JUNG

1 patent

KIM SUNG WOO

1 patent

KIM JI-YOUNG

1 patent

CHOI JAY-BOK

1 patent

Showing the top 50 of 91 patents by PatentIndex Score.