Inventor
HWANG YOO-SANG
KR91 patents
⚠️ This page may combine multiple inventors who share the name “HWANG YOO-SANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
43 patentsUS6489195B1Dec 3, 2002
Method for fabricating DRAM cell using a protection layer
SAMSUNG ELECTRONICS CO LTD48 citations96
US6613621B2Sep 2, 2003
Methods of forming self-aligned contact pads using a damascene gate process
SAMSUNG ELECTRONICS CO LTD71 citations94
US6929999B2Aug 16, 2005
Method of manufacturing semiconductor device with contact body extending in direction of bit line to contact storage node
SAMSUNG ELECTRONICS CO LTD25 citations93
US6720269B2Apr 13, 2004
Semiconductor device having a self-aligned contact structure and methods of forming the same
SAMSUNG ELECTRONICS CO LTD17 citations93
US6534813B1Mar 18, 2003
Semiconductor device having a self-aligned contact structure and methods of forming the same
SAMSUNG ELECTRONICS CO LTD19 citations93
US7026208B2Apr 11, 2006
Methods of forming integrated circuit devices including cylindrical capacitors having supporters between lower electrodes
SAMSUNG ELECTRONICS CO LTD28 citations92
US6764941B2Jul 20, 2004
Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD33 citations92
US6548853B1Apr 15, 2003
Cylindrical capacitors having a stepped sidewall and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD50 citations92
US6518671B1Feb 11, 2003
Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD18 citations92
US6479343B1Nov 12, 2002
DRAM cell capacitor and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD26 citations92
US6235573B1May 22, 2001
Methods of forming ferroelectric random access memory devices having shared capacitor electrodes
SAMSUNG ELECTRONICS CO LTD31 citations92
US6218296B1Apr 17, 2001
Semiconductor device with pillar-shaped capacitor storage node and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD16 citations92
US11482285B2Oct 25, 2022
Integrated circuit devices and methods of manufacturing same
SAMSUNG ELECTRONICS CO LTD6 citations85
US10573652B2Feb 25, 2020
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US9953981B2Apr 24, 2018
Methods of manufacturing semiconductor devices having buried contacts and related semiconductor devices
SAMSUNG ELECTRONICS CO LTD7 citations84
US9576902B2Feb 21, 2017
Semiconductor device including landing pad
SAMSUNG ELECTRONICS CO LTD5 citations84
US9159730B2Oct 13, 2015
Methods for fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD11 citations84
US7078292B2Jul 18, 2006
Storage node contact forming method and structure for use in semiconductor memory
SAMSUNG ELECTRONICS CO LTD20 citations84
US6977197B2Dec 20, 2005
Semiconductor devices having DRAM cells and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD14 citations84
US6638805B2Oct 28, 2003
Method of fabricating a DRAM semiconductor device
SAMSUNG ELECTRONICS CO LTD15 citations84
US11121134B2Sep 14, 2021
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations83
US10332831B2Jun 25, 2019
Semiconductor device including a bit line
SAMSUNG ELECTRONICS CO LTD7 citations83
US9634012B2Apr 25, 2017
Method of forming active patterns, active pattern array, and method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD15 citations83
US7749834B2Jul 6, 2010
Method of fabricating semiconductor devices having buried contact plugs
SAMSUNG ELECTRONICS CO LTD16 citations79
US7262108B2Aug 28, 2007
Methods for forming resistors for integrated circuit devices
SAMSUNG ELECTRONICS CO LTD7 citations74
US7176552B2Feb 13, 2007
Semiconductor memory device having a decoupling capacitor
SAMSUNG ELECTRONICS CO LTD8 citations74
US6815300B2Nov 9, 2004
Method for manufacturing semiconductor device having increased effective channel length
SAMSUNG ELECTRONICS CO LTD12 citations74
US6703657B2Mar 9, 2004
DRAM cell having electrode with protection layer
SAMSUNG ELECTRONICS CO LTD9 citations74
US6656790B2Dec 2, 2003
Method for manufacturing a semiconductor device including storage nodes of capacitor
SAMSUNG ELECTRONICS CO LTD9 citations74
US6288446B2Sep 11, 2001
Semiconductor device with pillar-shaped capacitor storage node
SAMSUNG ELECTRONICS CO LTD5 citations74
US11594538B2Feb 28, 2023
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US11251307B2Feb 15, 2022
Device comprising 2D material
SAMSUNG ELECTRONICS CO LTD2 citations73
US10665498B2May 26, 2020
Semiconductor device having air gap spacer and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations73
US10515798B2Dec 24, 2019
Method of fabricating device including two-dimensional material
SAMSUNG ELECTRONICS CO LTD4 citations73
US9972527B2May 15, 2018
Semiconductor device including air spacer
SAMSUNG ELECTRONICS CO LTD4 citations73
US9559103B2Jan 31, 2017
Memory device including selectively disposed landing pads expanded over signal line
SAMSUNG ELECTRONICS CO LTD6 citations73
US9437560B2Sep 6, 2016
Semiconductor device including landing pad
SAMSUNG ELECTRONICS CO LTD4 citations73
US9337151B2May 10, 2016
Semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations73
US9117696B2Aug 25, 2015
Semiconductor devices having balancing capacitor and methods of forming the same
SAMSUNG ELECTRONICS CO LTD5 citations73
US6927126B2Aug 9, 2005
Method of manufacturing semiconductor device with interconnections and interconnection contacts and a device formed thereby
SAMSUNG ELECTRONICS CO LTD8 citations73
US6670663B2Dec 30, 2003
DRAM cell capacitor and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD10 citations73
US6277702B1Aug 21, 2001
Capacitor of a semiconductor device and a method of fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations73
US6229171B1May 8, 2001
Storage element for semiconductor capacitor
SAMSUNG ELECTRONICS CO LTD10 citations73
KIM DAE-IK
3 patentsUS9419000B2Aug 16, 2016
Methods of manufacturing semiconductor devices having buried contacts and related semiconductor devices
KIM DAE-IK17 citations92
US9012321B1Apr 21, 2015
Method of manufacturing semiconductor device
KIM DAE-IK18 citations84
US8742493B2Jun 3, 2014
Semiconductor devices having vertical channel transistors and methods for fabricating the same
KIM DAE-IK12 citations84
KIM HUI-JUNG
1 patentKIM SUNG WOO
1 patentKIM JI-YOUNG
1 patentCHOI JAY-BOK
1 patentShowing the top 50 of 91 patents by PatentIndex Score.