Inventor
WUTHRICH RYAN WAYNE
US8 patents
Patents
8 patentsUS6875279B2Apr 5, 2005
Single reactor, multi-pressure chemical vapor deposition for semiconductor devices
IBM44 citations92
US6426265B1Jul 30, 2002
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
IBM25 citations92
US6815802B2Nov 9, 2004
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
IBM5 citations71
US6354309B1Mar 12, 2002
Process for treating a semiconductor substrate
IBM13 citations69
US6173720B1Jan 16, 2001
Process for treating a semiconductor substrate
IBM7 citations69
US7713829B2May 11, 2010
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
IBM1 citations62
US5741131AApr 21, 1998
Stacking system for substrates
IBM11 citations61
US7173274B2Feb 6, 2007
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
IBM0 citations51