Inventor
SANDHU SUKESH
US31 patents
⚠️ This page may combine multiple inventors who share the name “SANDHU SUKESH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
29 patentsUS7052972B2May 30, 2006
Method for forming sublithographic features during the manufacture of a semiconductor device and a resulting in-process apparatus
MICRON TECHNOLOGY INC217 citations99
US6323085B1Nov 27, 2001
High coupling split-gate transistor and method for its formation
MICRON TECHNOLOGY INC46 citations96
US7811935B2Oct 12, 2010
Isolation regions and their formation
MICRON TECHNOLOGY INC20 citations92
US7179717B2Feb 20, 2007
Methods of forming integrated circuit devices
MICRON TECHNOLOGY INC39 citations92
US6924186B2Aug 2, 2005
Method of forming a memory device and semiconductor device
MICRON TECHNOLOGY INC29 citations92
US6677640B1Jan 13, 2004
Memory cell with tight coupling
MICRON TECHNOLOGY INC28 citations92
US6614072B2Sep 2, 2003
High coupling split-gate transistor
MICRON TECHNOLOGY INC16 citations92
US7375004B2May 20, 2008
Method of making an isolation trench and resulting isolation trench
MICRON TECHNOLOGY INC12 citations84
US7271060B2Sep 18, 2007
Semiconductor processing methods
MICRON TECHNOLOGY INC10 citations84
US6830975B2Dec 14, 2004
Method of forming field effect transistor comprising at least one of a conductive metal or metal compound in electrical connection with transistor gate semiconductor material
MICRON TECHNOLOGY INC12 citations81
US7999328B2Aug 16, 2011
Isolation trench having first and second trench areas of different widths
MICRON TECHNOLOGY INC5 citations74
US7396720B2Jul 8, 2008
High coupling memory cell
MICRON TECHNOLOGY INC7 citations74
US6750502B1Jun 15, 2004
Technique to quench electrical defects in aluminum oxide film
MICRON TECHNOLOGY INC5 citations74
US6398923B1Jun 4, 2002
Multiple species sputtering method
MICRON TECHNOLOGY INC7 citations72
US5750012AMay 12, 1998
Multiple species sputtering for improved bottom coverage and improved sputter rate
MICRON TECHNOLOGY INC13 citations72
US8963279B2Feb 24, 2015
Semiconductor device isolation structures
MICRON TECHNOLOGY INC3 citations63
US7935610B2May 3, 2011
Semiconductor device isolation structures
MICRON TECHNOLOGY INC2 citations63
US7781860B2Aug 24, 2010
Semiconductor constructions, and electronic systems
MICRON TECHNOLOGY INC2 citations63
US7473615B2Jan 6, 2009
Semiconductor processing methods
MICRON TECHNOLOGY INC4 citations63
US7413962B2Aug 19, 2008
Method for forming sublithographic features during the manufacture of a semiconductor device and a resulting in-process apparatus
MICRON TECHNOLOGY INC3 citations63
US6083358AJul 4, 2000
Multiple species sputtering for improved bottom coverage and improved sputter rate
MICRON TECHNOLOGY INC1 citations61
US8378446B2Feb 19, 2013
Semiconductor device isolation structures
MICRON TECHNOLOGY INC0 citations52
US8035189B2Oct 11, 2011
Semiconductor constructions
MICRON TECHNOLOGY INC0 citations52
US7749837B2Jul 6, 2010
High coupling memory cell
MICRON TECHNOLOGY INC0 citations52
US7453134B2Nov 18, 2008
Integrated circuit device with a circuit element formed on an active region having rounded corners
MICRON TECHNOLOGY INC0 citations52
US7241661B2Jul 10, 2007
Method of forming a coupling dielectric Ta2O5 in a memory device
MICRON TECHNOLOGY INC0 citations52
US7358139B2Apr 15, 2008
Method of forming a field effect transistor including depositing and removing insulative material effective to expose transistor gate conductive material but not transistor gate semiconductor material
MICRON TECHNOLOGY INC0 citations51
US7271064B2Sep 18, 2007
Method of forming a field effect transistor using conductive masking material
MICRON TECHNOLOGY INC0 citations51
US7112491B2Sep 26, 2006
Methods of forming field effect transistors including floating gate field effect transistors
MICRON TECHNOLOGY INC0 citations51