P

Inventor

SHIN DONG-WON

KR32 patents
⚠️ This page may combine multiple inventors who share the name “SHIN DONG-WON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

15 patents
US6433380B2Aug 13, 2002

Integrated circuit capacitors having composite titanium oxide and tantalum pentoxide dielectric layers therein

SAMSUNG ELECTRONICS CO LTD49 citations96
US6300215B1Oct 9, 2001

Methods of forming integrated circuit capacitors having composite titanium oxide and tantalum pentoxide dielectric layers therein

SAMSUNG ELECTRONICS CO LTD75 citations96
US7542518B2Jun 2, 2009

Predistortion apparatus and method for compensating for a nonlinear distortion characteristic of a power amplifier using a look-up table

SAMSUNG ELECTRONICS CO LTD43 citations92
US6956433B2Oct 18, 2005

Polynomial predistorter using complex vector multiplication

SAMSUNG ELECTRONICS CO LTD30 citations92
US6730956B2May 4, 2004

Method for manufacturing the storage node of a capacitor of a semiconductor device and a storage node manufactured by the method

SAMSUNG ELECTRONICS CO LTD21 citations92
US7153740B2Dec 26, 2006

Fabrication of lean-free stacked capacitors

SAMSUNG ELECTRONICS CO LTD30 citations91
US6642135B2Nov 4, 2003

Method for forming semiconductor memory device having a fuse

SAMSUNG ELECTRONICS CO LTD10 citations74
US6319785B1Nov 20, 2001

Method for forming a contact in a semiconductor device

SAMSUNG ELECTRONICS CO LTD14 citations74
US6069817AMay 30, 2000

Memory device evaluation methods using test capacitor patterns

SAMSUNG ELECTRONICS CO LTD10 citations74
US7601630B2Oct 13, 2009

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US6911740B2Jun 28, 2005

Semiconductor device having increased gaps between gates

SAMSUNG ELECTRONICS CO LTD3 citations61
US6852581B2Feb 8, 2005

Methods of manufacturing a semiconductor device having increased gaps between gates

SAMSUNG ELECTRONICS CO LTD3 citations61
US7026240B2Apr 11, 2006

Method of fabricating a semiconductor device having a photo-sensitive polyimide layer and a device fabricated in accordance with the method

SAMSUNG ELECTRONICS CO LTD0 citations49
US11631798B2Apr 18, 2023

Bonding interposer and integrated circuit chip, and ultrasound probe using the same

SAMSUNG ELECTRONICS CO LTD0 citations45
US11179749B2Nov 23, 2021

Interposer, ultrasound probe using the same, and method of manufacturing interposer

SAMSUNG ELECTRONICS CO LTD0 citations45

KOREA INST ENERGY RES

8 patents

HANWHA L & C CORP

2 patents

SEMES CO LTD

2 patents

(unassigned)

1 patent

PARK JEA GUN

1 patent

IUCF HYU

1 patent

HYUNDAI MOTOR CO LTD

1 patent

PARK JAE-GUN

1 patent