Inventor
SHIN DONG-WON
KR32 patents
⚠️ This page may combine multiple inventors who share the name “SHIN DONG-WON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
15 patentsUS6433380B2Aug 13, 2002
Integrated circuit capacitors having composite titanium oxide and tantalum pentoxide dielectric layers therein
SAMSUNG ELECTRONICS CO LTD49 citations96
US6300215B1Oct 9, 2001
Methods of forming integrated circuit capacitors having composite titanium oxide and tantalum pentoxide dielectric layers therein
SAMSUNG ELECTRONICS CO LTD75 citations96
US7542518B2Jun 2, 2009
Predistortion apparatus and method for compensating for a nonlinear distortion characteristic of a power amplifier using a look-up table
SAMSUNG ELECTRONICS CO LTD43 citations92
US6956433B2Oct 18, 2005
Polynomial predistorter using complex vector multiplication
SAMSUNG ELECTRONICS CO LTD30 citations92
US6730956B2May 4, 2004
Method for manufacturing the storage node of a capacitor of a semiconductor device and a storage node manufactured by the method
SAMSUNG ELECTRONICS CO LTD21 citations92
US7153740B2Dec 26, 2006
Fabrication of lean-free stacked capacitors
SAMSUNG ELECTRONICS CO LTD30 citations91
US6642135B2Nov 4, 2003
Method for forming semiconductor memory device having a fuse
SAMSUNG ELECTRONICS CO LTD10 citations74
US6319785B1Nov 20, 2001
Method for forming a contact in a semiconductor device
SAMSUNG ELECTRONICS CO LTD14 citations74
US6069817AMay 30, 2000
Memory device evaluation methods using test capacitor patterns
SAMSUNG ELECTRONICS CO LTD10 citations74
US7601630B2Oct 13, 2009
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US6911740B2Jun 28, 2005
Semiconductor device having increased gaps between gates
SAMSUNG ELECTRONICS CO LTD3 citations61
US6852581B2Feb 8, 2005
Methods of manufacturing a semiconductor device having increased gaps between gates
SAMSUNG ELECTRONICS CO LTD3 citations61
US7026240B2Apr 11, 2006
Method of fabricating a semiconductor device having a photo-sensitive polyimide layer and a device fabricated in accordance with the method
SAMSUNG ELECTRONICS CO LTD0 citations49
US11631798B2Apr 18, 2023
Bonding interposer and integrated circuit chip, and ultrasound probe using the same
SAMSUNG ELECTRONICS CO LTD0 citations45
US11179749B2Nov 23, 2021
Interposer, ultrasound probe using the same, and method of manufacturing interposer
SAMSUNG ELECTRONICS CO LTD0 citations45
KOREA INST ENERGY RES
8 patentsUS11489179B2Nov 1, 2022
Method and apparatus for multi-stage fault diagnosis of fuel cell systems
KOREA INST ENERGY RES0 citations61
US11220583B2Jan 11, 2022
Block copolymer, ion-exchange membrane and method of preparing block copolymer
KOREA INST ENERGY RES0 citations61
US10717835B2Jul 21, 2020
Block copolymer, ion-exchange membrane and method of preparing block copolymer
KOREA INST ENERGY RES1 citations61
US10930936B2Feb 23, 2021
Apparatus and method for manufacturing continuous reactor type core-shell catalyst electrode
KOREA INST ENERGY RES0 citations60
US11211617B2Dec 28, 2021
Fuel cell generator system
KOREA INST ENERGY RES0 citations51
US12519114B2Jan 6, 2026
Modeling methods for designing fuel cell flow field
KOREA INST ENERGY RES0 citations50
US11813600B2Nov 14, 2023
Method for preparation gaseous-nitridation treated or liquid-nitridation treated core-shell catalyst
KOREA INST ENERGY RES0 citations50
US11362361B2Jun 14, 2022
Membrane-electrode assembly and method for manufacturing the same
KOREA INST ENERGY RES0 citations50