P

Inventor

OGASAWARA MAKOTO

JP38 patents
⚠️ This page may combine multiple inventors who share the name “OGASAWARA MAKOTO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HITACHI LTD

17 patents
US5780882AJul 14, 1998

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

HITACHI LTD33 citations96
US5331191AJul 19, 1994

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

HITACHI LTD24 citations96
US5202275AApr 13, 1993

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

HITACHI LTD43 citations96
US4974060ANov 27, 1990

Semiconductor integrated circuit device and method of manufacturing the same

HITACHI LTD62 citations96
US6620704B2Sep 16, 2003

Method of fabricating low stress semiconductor devices with thermal oxide isolation

HITACHI LTD13 citations92
US6291847B1Sep 18, 2001

Semiconductor integrated circuit device and process for manufacturing the same

HITACHI LTD30 citations92
US6548847B2Apr 15, 2003

Semiconductor integrated circuit device having a first wiring strip exposed through a connecting hole, a transition-metal film in the connecting hole and an aluminum wiring strip thereover, and a transition-metal nitride film between the aluminum wiring strip and the transition-metal film

HITACHI LTD12 citations82
US6342412B1Jan 29, 2002

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

HITACHI LTD8 citations82
US6169324B1Jan 2, 2001

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

HITACHI LTD13 citations82
US6127255AOct 3, 2000

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

HITACHI LTD8 citations82
US5811316ASep 22, 1998

Method of forming teos oxide and silicon nitride passivation layer on aluminum wiring

HITACHI LTD8 citations82
US5739589AApr 14, 1998

Semiconductor integrated circuit device process for fabricating the same and apparatus for fabricating the same

HITACHI LTD13 citations82
US5557147ASep 17, 1996

Semiconductor integrated circuit device, process for fabricating the same, and apparatus for fabricating the same

HITACHI LTD7 citations74
US5889312AMar 30, 1999

Semiconductor device having circuit element in stress gradient region by film for isolation and method of manufacturing the same

HITACHI LTD6 citations71
US6573546B2Jun 3, 2003

Semiconductor integrated circuit device and process for manufacturing the same

HITACHI LTD2 citations63
US6310384B1Oct 30, 2001

Low stress semiconductor devices with thermal oxide isolation

HITACHI LTD2 citations63
US6949387B2Sep 27, 2005

Method of designing a semiconductor device

HITACHI LTD0 citations52

TEIJIN LTD

8 patents

RENESAS ELECTRONICS CORP

3 patents

FUJI ELECTRIC CO LTD

2 patents

ISHIHARA MINING & CHEMICAL CO

2 patents

AGENCY IND SCIENCE TECHN

1 patent

HITACHI VLSI ENG

1 patent

HONDA MOTOR CO LTD

1 patent

ISHIHARA SANGYO KAISHA

1 patent

SUMITOMO ELECTRIC INDUSTRIES

1 patent

CANON MEDICAL SYSTEMS CORP

1 patent