Inventor
BOJARCZUK JR NESTOR ALEXANDER
US11 patents
Patents
11 patentsUS6255671B1Jul 3, 2001
Metal embedded passivation layer structure for microelectronic interconnect formation, customization and repair
IBM64 citations96
US6852575B2Feb 8, 2005
Method of forming lattice-matched structure on silicon and structure formed thereby
IBM43 citations95
US7432550B2Oct 7, 2008
Semiconductor structure including mixed rare earth oxide formed on silicon
IBM16 citations92
US6891231B2May 10, 2005
Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier
IBM19 citations92
US5874147AFeb 23, 1999
Column III metal nitride films as phase change media for optical recording
IBM21 citations92
US7923743B2Apr 12, 2011
Semiconductor structure including mixed rare earth oxide formed on silicon
IBM9 citations83
US7648864B2Jan 19, 2010
Semiconductor structure including mixed rare earth oxide formed on silicon
IBM4 citations73
US7348226B2Mar 25, 2008
Method of forming lattice-matched structure on silicon and structure formed thereby
IBM5 citations73
US7169674B2Jan 30, 2007
Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier
IBM9 citations73
US6933566B2Aug 23, 2005
Method of forming lattice-matched structure on silicon and structure formed thereby
IBM10 citations73
US5793711AAug 11, 1998
Composite magneto-optic memory and media
IBM11 citations71